Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment von Dubrovskii, V. G., Cirlin, G. E., Soshnikov, I. P., Tonkikh, A. A., Sibirev, N. V., Samsonenko, Yu. B., Ustinov, V. M.

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Origin of Spontaneous Core–Shell AlGaAs Nanowires Grown by Molecular Beam Epitaxy von Dubrovskii, V. G, Shtrom, I. V, Reznik, R. R, Samsonenko, Yu. B, Khrebtov, A. I, Soshnikov, I. P, Rouvimov, S, Akopian, N, Kasama, T, Cirlin, G. E

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Terahertz generation by GaAs nanowires von Trukhin, V. N., Buyskikh, A. S., Kaliteevskaya, N. A., Bourauleuv, A. D., Samoilov, L. L., Samsonenko, Yu. B., Cirlin, G. E., Kaliteevski, M. A., Gallant, A. J.

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Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates von Cirlin, G. E., Dubrovskii, V. G., Soshnikov, I. P., Sibirev, N. V., Samsonenko, Yu. B., Bouravleuv, A. D., Harmand, J. C., Glas, F.

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Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate von Shtrom, I. V., Kotlyar, K. P., Filosofov, N. G., Serov, A. Yu, Krizhkov, D. I., Samsonenko, Yu. B., Ilkiev, I. V., Reznik, R. R., Agekyan, V. F., Cirlin, G. E.

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Photoluminescence properties of InAs nanowires grown on GaAs and Si substrates von Sun, M H, Leong, E S P, Chin, A H, Ning, C Z, Cirlin, G E, Samsonenko, Yu B, Dubrovskii, V G, Chuang, L, Chang-Hasnain, C

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Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon von Cirlin, G. E., Reznik, R. R., Samsonenko, Yu. B., Khrebtov, A. I., Kotlyar, K. P., Ilkiv, I. V., Soshnikov, I. P., Kirilenko, D. A., Kryzhanovskaya, N. V.

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Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources von Cirlin, G. E., Reznik, R. R., Shtrom, I. V., Khrebtov, A. I., Samsonenko, Yu. B., Kukushkin, S. A., Kasama, T., Akopian, N., Leonardo, L.

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Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon von Cirlin, G. E., Shtrom, I. V., Reznik, R. R., Samsonenko, Yu. B., Khrebtov, A. I., Bouravleuv, A. D., Soshnikov, I. P.

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The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires von Grigorieva, N. R., Shtrom, I. V., Grigoriev, R. V., Soshnikov, I. P., Reznik, R. R., Samsonenko, Yu. B., Sibirev, N. V., Cirlin, G. E.

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Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate von Cirlin, G. E., Bouravleuv, A. D., Soshnikov, I. P., Samsonenko, Yu B., Dubrovskii, V. G., Arakcheeva, E. M., Tanklevskaya, E. M., Werner, P.

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GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases von Shtrom, I. V., Sibirev, N. V., Ubiivovk, E. V., Samsonenko, Yu. B., Khrebtov, A. I., Reznik, R. R., Bouravleuv, A. D., Cirlin, G. E.

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Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy von Cirlin, G. E., Dubrovskii, V. G., Samsonenko, Yu. B., Bouravleuv, A. D., Durose, K., Proskuryakov, Y. Y., Mendes, Budhikar, Bowen, L., Kaliteevski, M. A., Abram, R. A., Zeze, Dagou

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Surface passivation of GaAs nanowires by the atomic layer deposition of AlN von Shtrom, I. V., Bouravleuv, A. D., Samsonenko, Yu. B., Khrebtov, A. I., Soshnikov, I. P., Reznik, R. R., Cirlin, G. E., Dhaka, V., Perros, A., Lipsanen, H.

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Directional emission from beryllium doped GaAs/AlGaAs nanowires von Talalaev, V. G., Shtrom, I. V., Samsonenko, Yu. B., Khrebtov, A. I., Bouravleuv, A. D., Cirlin, G. E.

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Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range von Zhukov, A. E., Cirlin, G. E., Reznik, R. R., Samsonenko, Yu. B., Khrebtov, A. I., Kaliteevski, M. A., Ivanov, K. A., Kryzhanovskaya, N. V., Maximov, M. V., Alferov, Zh. I.

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The effect of a gas environment on the fluorescence intensity of quantum-dot composite systems von Danilov, V. V., Khrebtovb, A. I., Shtrom, I. V., Tsyrlin, G. E., Samsonenko, Yu. B.

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Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure von Novikov, B. V., Serov, S. Yu, Filosofov, N. G., Shtrom, I. V., Talalaev, V. G., Vyvenko, O. F., Ubyivovk, E. V., Samsonenko, Yu. B., Bouravleuv, A. D., Soshnikov, I. P., Sibirev, N. V., Cirlin, G. E., Dubrovskii, V. G.

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GaAs single quantum dot embedded into AlGaAs nanowire von Kochereshko, V P, Kats, V N, Platonov, A V, Cirlin, G E, Bouravleuv, A D, Samsonenko, Yu B, Besombes, L, Mariette, H

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Effect of an arsenic flux on the molecular-beam epitaxy of self-catalytic (Ga,Mn)As nanowire crystals von Sibirev, N. V., Bouravleuv, A. D., Trushkov, Yu. M., Beznasyuk, D. V., Samsonenko, Yu. B., Cirlin, G. E.

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