Strain relaxation process of undoped and Si-doped semipolar AlxGa1−xN grown on (202¯1) bulk GaN substrate von Chung, Roy B., Sampath, Anand V., Nakamura, Shuji

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Crack-free > 1-μm AlN layer on Si substrate using ductile interlayer for strain modification in epitaxial film von Aqib, Muhammad, Moradnia, Mina, Ji, Mihee, Parameshwaran, Vijay S., Sarney, Wendy L., Pouladi, Sara, Kim, Nam-In, Kumar, Rheno Paul Rajesh, Garrett, Gregory A., Sampath, Anand V., Forrest, Rebecca L., Ryou, Jae-Hyun

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Formation of Spontaneous Lateral Heterostructures in High Al content AlxGa1−xN Alloys Grown by High-Temperature Plasma-Assisted Molecular Beam Epitaxy von Sarney, Wendy L., Ji, Mihee, Leff, Asher C., Larkin, LeighAnn S., Garrett, Gregory A., Sampath, Anand V., Wraback, Michael

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Near ultraviolet enhanced 4H-SiC Schottky diode von Shen, Yang, Jones, Andrew H., Yuan, Yuan, Zheng, Jiyuan, Peng, Yiwei, VanMil, Brenda, Olver, Kimberley, Sampath, Anand V., Parker, Cory, Opila, Elizabeth, Campbell, Joe C.

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Optical polarization switching in semipolar ( 20 2 ¯ 1 ) InGaN multiple quantum wells induced by strain engineering von Chung, Roy B., Garrett, Gregory A., Enck, Ryan W., Sampath, Anand V., Wraback, Michael, Reed, Meredith L.

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Current-induced degradation of high performance deep ultraviolet light emitting diodes von Moe, Craig G., Reed, Meredith L., Garrett, Gregory A., Sampath, Anand V., Alexander, Troy, Shen, Hongen, Wraback, Michael, Bilenko, Yuriy, Shatalov, Maxim, Yang, Jinwei, Sun, Wenhong, Deng, Jianyu, Gaska, Remis

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GaN/SiC avalanche photodiodes von Zhou, Qiugui, McIntosh, Dion C., Lu, Zhiwen, Campbell, Joe C., Sampath, Anand V., Shen, Hongen, Wraback, Michael

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Growth and impurity characterization of AlN on (0001) sapphire grown by spatially pulsed MOCVD von Chung, Roy B., Rodak, Lee E., Enck, Ryan W., Sampath, Anand V., Wraback, Michael, Reed, Meredith L.

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AlGaN/SiC Heterojunction Ultraviolet Photodiodes von Chen, Yoajia, Reed, Meredith L., Garrett, Gregory A., Vanmil, Brenda L., Chung, Roy B., Shen, H., Sampath, Anand V., Zhou, Q., Wraback, Michael, Enck, Ryan W., Campbell, Joe C.

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Fabrication of periodically poled AlN with sub-micron periods von Wright, Jonathan, Moe, Craig, Sampath, Anand V., Garrett, Gregory A., Wraback, Michael

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Suppression of non-radiative effects in AlGaN through nanometer scale compositional inhomogeneities von Sampath, Anand V., Garrett, Gregory A., Enck, Ryan W., Rotella Jr, Paul, Shen, H., Wraback, Michael

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Deep UV light emitting diodes grown by gas source molecular beam epitaxy von Nikishin, Sergey, Borisov, Boris, Kuryatkov, Vladimir, Holtz, Mark, Garrett, Gregory A., Sarney, Wendy L., Sampath, Anand V., Shen, Hongen, Wraback, Michael, Usikov, Alexander, Dmitriev, Vladimir

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Temperature Dependence of Carrier Dynamics in AlGaN Alloys With Enhanced Light Emission from Nanoscale Compositional Inhomogeneities von Garrett, Gregory A, Sampath, Anand V, Shen, Hongen, Wraback, Michael

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Surface electronic structure of p-type GaN(0001̄) von Ryan, Philip, Chao, Y.-C., Downes, James, McGuinness, Cormac, Smith, Kevin E., Sampath, Anand V., Moustakas, Theodore D.

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Investigation of Nucleation and Intermixing at Hetero-Interface in III-Nitride-4H-SiC Structures von Enck, Ryan Wade, Sampath, Anand V, Chung, Roy, Knorr, Daniel B, Garrett, Gregory A, Reed, Meredith L

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(Invited) Enhancing the Deep Ultraviolet Performance of 4H-SiC Based Photodiodes von Sampath, Anand V, Chen, Yaojia, Rodak, Lee Ellen, Zhou, Quigui, Campbell, Joe C, Shen, Hongshen, Wraback, Michael

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Effect of Interface Polarization Charge on GaN/SiC Separate Absorption and Multiplication Avalanche Photodiodes von Shen, Paul H., Sampath, Anand V., Zhou, Quigui, Campbell, Joe, Wraback, Michael

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Junction Electrochemistry of InGaN Anode Materials in Solar Energy Conversion von Parameshwaran, Vijay, Sampath, Anand V, Wraback, Michael

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Electron acceleration and capture device for preserving excess kinetic energy to drive electrochemical reduction reactions von Sampath, Anand V, Wraback, Michael, Shen, Paul, Parameshwaran, Vijay S

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UV pump-THz probe study of mechanisms limiting luminescence from nanoscale compositionally inhomogeneous AlGaN von Metcalfe, Grace D., Garrett, Gregory A., Rotella, Paul, Sampath, Anand V., Wright, Jonathan, Hongen Shen, Wraback, Michael, Sweeney, Timothy M., Hailin Wang

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