High quantum efficiency deep ultraviolet 4H-SiC photodetectors von Sampath, A.V, Rodak, L.E, Chen, Y, Zhou, Q, Campbell, J.C, Shen, H, Wraback, M

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Characterization of nanometer scale compositionally inhomogeneous AlGaN active regions on bulk AlN substrates von Sampath, A.V., Garrett, G.A., Readinger, E.D., Enck, R.W., Shen, H., Wraback, M., Grandusky, J.R., Schowalter, L.J.

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Optimization of Annealing Process for Improved InGaN Solar Cell Performance von Das, N.C., Reed, M.L., Sampath, A.V., Shen, H., Wraback, M., Farrell, R.M., Iza, M., Cruz, S.C., Lang, J.R., Young, N.G., Terao, Y., Neufeld, C. J., Keller, S., Nakamura, S., DenBaars, S.P., Mishra, U.K., Speck, J.S.

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Growth and device applications of III-nitrides by MBE von Moustakas, T.D, Iliopoulos, E, Sampath, A.V, Ng, H.M, Doppalapudi, D, Misra, M, Korakakis, D, Singh, R

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Defect density dependence of luminescence efficiency and lifetimes in AlGaN active regions exhibiting enhanced emission from nanoscale compositional inhomogeneities von Garrett, G. A., Sampath, A.V., Collins, C. J., Readinger, E. D., Sarney, W. L., Shen, H., Wraback, M., Soukhoveev, V., Usikov, A., Dmitriev, V.

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The effects of increasing AlN mole fraction on the performance of AlGaN based ultraviolet light emitting diode active regions von Sampath, A.V., Garrett, G.A., Sarney, W.L., Shen, H., Wraback, M., Grandusky, J.R., Schowalter, L.J.

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Generation Recombination Noise in GaN Photoconducting Detectors von Misra, M., Doppalapudi, D., Sampath, A.V., Moustakas, T.D., McDonald, P.H.

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Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy von Misra, M., Sampath, A.V., Moustakas, T.D.

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Characterization of nanometer scale compositionally inhomogeneous AlGaN active regions on bulk AlN substrates von Sampath, A.V., Garrett, G.G., Readinger, E.D., Shen, H., Wraback, M., Grandusky, J.R., Schowalter, L.J.

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Algan Light Emitters Based on Nanoscale Compositional Inhomogeneties von Wraback, M., Garrett, G.A., Sampath, A.V., Collins, C.J., Sarney, W.L., Shen, H.

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UVLED based on carrier localization in AlGaN von Collins, C.J., Sampath, A.V., Garrett, G.A., Shen, H., Wraback, M., Readinger, E.

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Subpicosecond luminescence spectroscopy of hot carrier dynamics in homoepitaxial GaN von Garrett, G.A., Rudin, S., Sampath, A.V., Collins, C.J., Shen, H., Wraback, M.

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Giant reversible adiabatic temperature change and isothermal heat transfer of MnAs single crystals studied by direct method in high magnetic fields von Koshkid'ko, Yu.S., Dilmieva, E.T., Cwik, J., Rogacki, K., Kowalska, D., Kamantsev, A.P., Koledov, V.V., Mashirov, A.V., Shavrov, V.G., Valkov, V.I., Golovchan, A.V., Sivachenko, A.P., Shevyrtalov, S.N., Rodionova, V.V., Shchetinin, I.V., Sampath, V.

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Synthesis and biological evaluation of new bisindole-imidazopyridine hybrids as apoptosis inducers von Sunkari, Satish, Bonam, Srinivasa Reddy, Rao, A.V. Subba, Riyaz, Sd, Lakshma Nayak, V., Kumar, Halmuthur Mahabalarao Sampath, Kamal, Ahmed, Nagendra Babu, Bathini

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Investigation of structure and physical properties of alloys from the Fe-Ni-Co-Al family von Koledov, V.V., Dilmieva, E.T., Kalashnikov, V.S., Kamantsev, A.P., Mashirov, A.V., von Gratowski, S.V., Shavrov, V.G., Koshkid’ko, Yu.S., Koshelev, A.V., Taskaev, S.V., Sampath, V., Musabirov, I.I., Chung, F.V., Grechishkin, R.M.n

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Are Diamonds a MEMS' Best Friend? von Auciello, Orlando, Pacheco, Sergio, Sumant, Anirudha V., Gudeman, Chris, Sampath, Suresh, Datta, Arindom, Carpick, Robert W., Adiga, Vivekananda P., Zurcher, Peter, Ma, Zhenqiang, Yuan, Hao-chih, Carlisle, John A., Kabius, Bernd, Hiller, Jon, Srinivasan, Sudarsan

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