A cost-effective technology to improve power performance of nanoribbons GaN HEMTs von Soltani, A., Benbakhti, B., Gerbedoen, J.-C., Khediri, A., Maher, H., Salvestrini, J.-P., Ougazzaden, A., Bourzgui, N. E., Barkad, H. A.

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Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications von Abid, M., Moudakir, T., Orsal, G., Gautier, S., En Naciri, A., Djebbour, Z., Ryou, J.-H., Patriarche, G., Largeau, L., Kim, H. J., Lochner, Z., Pantzas, K., Alamarguy, D., Jomard, F., Dupuis, R. D., Salvestrini, J.-P., Voss, P. L., Ougazzaden, A.

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MOVPE grown periodic AlN/BAlN heterostructure with high boron content von Li, X., Sundaram, S., El Gmili, Y., Genty, F., Bouchoule, S., Patriache, G., Disseix, P., Réveret, F., Leymarie, J., Salvestrini, J.-P., Dupuis, R.D., Voss, P.L., Ougazzaden, A.

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Interface state effects in GaN Schottky diodes von Ahaitouf, A., Srour, H., Hamady, S. Ould Saad, Fressengeas, N., Ougazzaden, A., Salvestrini, J.P.

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AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm von Li, X., Sundaram, S., Disseix, P., Le Gac, G., Bouchoule, S., Patriarche, G., Réveret, F., Leymarie, J., El Gmili, Y., Moudakir, T., Genty, F., Salvestrini, J-P., Dupuis, R. D., Voss, P. L., Ougazzaden, A.

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Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm von Li, X, Le Gac, G, Bouchoule, S, El Gmili, Y, Patriarche, G, Sundaram, S, Disseix, P, Reveret, F, Leymarie, J, Streque, J, Genty, F, Salvestrini, J-P, Dupuis, R D, Li, X-H, Voss, P L, Ougazzaden, A

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Calculation of the dispersion of the electro-optical and second harmonic coefficients from the refractive index dispersion von Fontana, M.D., Abarkan, M., Salvestrini, J.P.

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Photoinduced doping in hexagonal boron nitride von Perepeliuc, A., Gujrati, R., Srivastava, A., Vuong, P., Ottapilakkal, V., Voss, P. L., Sundaram, S., Salvestrini, J. P., Ougazzaden, A.

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Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates von El Gmili, Y., Bonanno, P. L., Sundaram, S., Li, X., Puybaret, R., Patriarche, G., Pradalier, C., Decobert, J., Voss, P. L., Salvestrini, J-P., Ougazzaden, A.

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Characteristics of the surface microstructures in thick InGaN layers on GaN von Gmili, Y. El, Orsal, G., Pantzas, K., Ahaitouf, A., Moudakir, T., Gautier, S., Patriarche, G., Troadec, D., Salvestrini, J. P., Ougazzaden, A.

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Single crystalline boron rich B(Al)N alloys grown by MOVPE von Vuong, P., Mballo, A., Sundaram, S., Patriarche, G., Halfaya, Y., Karrakchou, S., Srivastava, A., Krishnan, K., Sama, N. Y., Ayari, T., Gautier, S., Voss, P. L., Salvestrini, J. P., Ougazzaden, A.

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Bandgap energy bowing parameter of strained and relaxed InGaN layers von Orsal, G., El Gmili, Y., Fressengeas, N., Streque, J., Djerboub, R., Moudakir, T., Sundaram, S., Ougazzaden, A., Salvestrini, J.P.

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Electro-optic and dielectric properties of Hafnium-doped congruent lithium niobate crystals von Abarkan, M., Aillerie, M., Salvestrini, J. P., Fontana, M. D., Kokanyan, E. P.

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Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors von Bishop, C., Salvestrini, J. P., Halfaya, Y., Sundaram, S., El Gmili, Y., Pradere, L., Marteau, J. Y., Assouar, M. B., Voss, P. L., Ougazzaden, A.

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Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study von El Gmili, Y., Orsal, G., Pantzas, K., Moudakir, T., Sundaram, S., Patriarche, G., Hester, J., Ahaitouf, A., Salvestrini, J.P., Ougazzaden, A.

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Improving InGaN heterojunction solar cells efficiency using a semibulk absorber von Arif, M., Elhuni, W., Streque, J., Sundaram, S., Belahsene, S., El Gmili, Y., Jordan, M., Li, X., Patriarche, G., Slaoui, A., Migan, A., Abderrahim, R., Djebbour, Z., Voss, P.L., Salvestrini, J.P., Ougazzaden, A.

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Study of the partial decomposition of GaN layers grown by MOVPE with different coalescence degree von Bouazizi, H., Chaaben, N., El Gmili, Y., Bchetnia, A., Salvestrini, J.P., El Jani, B.

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Frequency and wavelength dependencies of the electro-optic coefficients in SBN:60 single crystal von Abarkan, M., Salvestrini, J.P., Fontana, M.D., Cuniot-Ponsard, M.

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Observation of the early stages of GaN thermal decomposition at 1200 °C under N2 von Bouazizi, H., Bouzidi, M., Chaaben, N., El Gmili, Y., Salvestrini, J.P., Bchetnia, A.

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Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates von Sundaram, S., El Gmili, Y., Puybaret, R., Li, X., Bonanno, P. L., Pantzas, K., Patriarche, G., Voss, P. L., Salvestrini, J. P., Ougazzaden, A.

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