SOI Field-Effect Diode DRAM Cell: Design and Operation von Badwan, Ahmad Z., Chbili, Zakariae, Yang, Yang, Salman, Akram A., Li, Qiliang, Ioannou, Dimitris E.

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Improved inductive-system-level IEC ESD performance for automotive applications using mutual ballasted ESD protection technique von Salman, Akram A., Farbiz, Farzan, Concannon, Ann, Edwards, Hal, Boselli, Gianluca

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Design and Characterization of ESD Protection Devices for High-Speed I/O in Advanced SOI Technology von Shuqing Cao, Salman, A.A., Jung-Hoon Chun, Beebe, S.G., Pelella, M.M., Dutton, R.W.

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Design and optimization of the SOI field effect diode (FED) for ESD protection von Yang, Yang, Salman, Akram A., Ioannou, Dimitris E., Beebe, Stephen G.

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Gate-controlled field-effect diodes and silicon-controlled rectifier for charged-device model ESD protection in advanced SOI technology von Cao, Shuqing, Chun, Jung-Hoon, Salman, Akram A., Beebe, Stephen G., Dutton, Robert W.

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Field Effect Resistor, a single-device-at-pad solution for ESD protection in deeply scaled SOI technology von Shuqing Cao, Salman, Akram A, Jung-Hoon Chun, Beebe, Stephen G, Pelella, Mario M, Dutton, Robert W

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Overshoot-induced failures in forward-biased diodes: A new challenge to high-speed ESD design von Farbiz, F., Appaswamy, A., Salman, A. A., Boselli, G.

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ESD protection device with deep trench isolation islands von Chen, Zaichen, Salman, Akram A, Hu, Binghua

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Engineering optimal high current characteristics of high voltage DENMOS von Salman, Akram A., Farbiz, F., Appaswamy, A., Kunz, H., Boselli, G., Dissegna, M.

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ESD protection circuit with isolated SCR for negative voltage operation von Salman, Akram A, Chatterjee, Amitava, Wu, Xiaoju, Farbiz, Farzan

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SEGMENTED NPN VERTICAL BIPOLAR TRANSISTOR von EDWARDS, Henry Litzmann, SALMAN, Akram A, MAHMUD, Md. Iqbal

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eFUSE programming feedback circuits and methods von Seshadri, Anand, Salman, Akram A, San, Kemal Tamer, Ball, Michael, Dusa, Sunil Kumar

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Positive strike SCR, negative strike SCR, and a bidirectional ESD structure that utilizes the positive strike SCR and the negative strike SCR von Salman, Akram A, Edwards, Henry Litzmann, Mahmud, Md Iqbal

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ISOLATION STRUCTURE FOR IC WITH EPI REGIONS SHARING THE SAME TANK von EDWARDS, Henry Litzmann, Hu, Binghua, SALMAN, Akram A

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Isolation structure for IC with epi regions sharing the same tank von Salman, Akram A, Edwards, Henry Litzmann, Hu, Binghua

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ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERATION von Salman, Akram A, Chatterjee, Amitava, Wu, Xiaoju, Farbiz, Farzan

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ESD protection device with deep trench isolation islands von Chen, Zaichen, Salman, Akram A, Hu, Binghua

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Field effect diode for effective CDM ESD protection in 45 nm SOI technology von Shuqing Cao, Beebe, S.G., Salman, A.A., Pelella, M.M., Jung-Hoon Chun, Dutton, R.W.

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Double-well field effect diode vs. SCR behavior under CDM stress in 45nm SOI technology von Salman, Akram A., Cao, Shuqing, Beebe, Stephen G., Pelella, Mario M., Dutton, Robert W.

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ESD protection circuit with isolated SCR for negative voltage operation von Salman, Akram A, Chatterjee, Amitava, Wu, Xiaoju, Farbiz, Farzan

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