Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime von Jazaeri, F., Barbut, L., Koukab, A., Sallese, J.-M.

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Review: Protein misfolding diseases – the rare case of Marinesco‐Sjögren syndrome von Chiesa, R., Sallese, M.

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Optical coherence tomography measurement of capillary filling in porous silicon von Sallese, M., Torga, J., Morel, E., Budini, N., Urteaga, R.

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High-rate, high-resolution single photon X-ray imaging: Medipix4, a large 4-side buttable pixel readout chip with high granularity and spectroscopic capabilities von Sriskaran, V., Alozy, J., Ballabriga, R., Campbell, M., Christodoulou, P., Heijne, E., Koukab, A., Kugathasan, T., Llopart, X., Piller, M., Pulli, A., Sallese, J.-M., Tlustos, L.

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Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID von Termo, G., Borghello, G., Faccio, F., Michelis, S., Koukab, A., Sallese, J.-M.

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Filling fraction measurement around a drying drop onto nanoporous silicon using digital holographic microscopy von Martínez, M. F., Sallese, M. D., Psota, P., Berli, C. L. A., Urteaga, R., Budini, N., Monaldi, A. C.

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Digital holographic microscopy implementation for capillary filling measurements in nanoporous materials von Budini, N, Sallese, M, Cencha, L G, Berli, C L A, Urteaga, R

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On performance scaling and speed of junctionless transistors von Koukab, A., Jazaeri, F., Sallese, J.-M.

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Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor von Yesayan, A., Petrosyan, S., Papiyan, A., Sallese, J.-M.

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Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications von Termo, G., Borghello, G., Faccio, F., Michelis, S., Koukab, A., Sallese, J.M.

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Role of the gate in ballistic nanowire SOI MOSFETs von Mangla, A., Sallese, J.-M., Sampedro, C., Gamiz, F., Enz, C.

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A capacitor-less 1T-DRAM cell von Okhonin, S., Nagoga, M., Sallese, J.M., Fazan, P.

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Principle of the electrically induced Transient Current Technique von Bronuzzi, J., Moll, M., Bouvet, D., Mapelli, A., Sallese, J.M.

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Transient current technique for charged traps detection in silicon bonded interfaces von Bronuzzi, J., Bouvet, D., Charrier, C., Fournel, F., García, M. F., Mapelli, A., Moll, M., Rouchouze, E., Sallese, J. M.

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Development of a simple method based on LIBS for evaluation of neutron production targets made of hydrogen isotopes von Gaviola, P.A., Sallese, M., Suarez Anzorena, M., Ararat Ibarguen, C.E., Bertolo, A.A., Iribarren, M., Perez, R., Morel, E., Torga, J., Kreiner, A.J., del Grosso, M.F.

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Design and modeling of self-aligned nano-imprinted sub-micrometer pentacene-based organic thin-film transistors von Zanella, F., Marjanović, N., Ferrini, R., Gold, H., Haase, A., Fian, A., Stadlober, B., Müller, R., Genoe, J., Hirshy, H., Drost, A., König, M., Lee, K.-D., Ring, J., Prétôt, R., Enz, C.C., Sallese, J.-M.

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Explicit Compact Model for Ultranarrow Body FinFETs von Mingchun Tang, Pregaldiny, F., Lallement, C., Sallese, J.-M.

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Generalization of the Concept of Equivalent Thickness and Capacitance to Multigate MOSFETs Modeling von Chevillon, N., Sallese, J-M, Lallement, C., Prégaldiny, F., Madec, M., Sedlmeir, J., Aghassi, J.

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New architecture for the analog front-end of Medipix4 von Sriskaran, V., Alozy, J., Ballabriga, R., Campbell, M., Egidos, N., Fernandez-Tenllado, J.M., Heijne, E., Kremastiotis, I., Koukab, A., Llopart, X., Sallese, J.M., Tlustos, L.

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Noise modeling methodologies in the presence of mobility degradation and their equivalence von Roy, A.S., Enz, C.C., Sallese, J.-M.

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