Mental health impact of multiple sexually minoritized and gender expansive stressors among LGBTQ+ young adults: a latent class analysis von Shrader, C.-H., Salerno, J. P., Lee, J.-Y., Johnson, A. L., Algarin, A. B.

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AT THE INTERSECTION OF LATINX & LGBTQ IDENTITIES: HOW DO RACIST MICROAGGRESSIONS & LGBTQ MINORITY STRESSORS AFFECT MENTAL DISTRESS AMONG YOUNG ADULTS? von Salerno, JP, Lea, CH, Johnson, N, Anyiwo, N, Alcantara, C.

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Dielectric properties of GaAs AlGaAs multiple quantum well waveguides von Sonek, G., Ballantyne, J., Chen, Y., Carter, G., Brown, S., Koteles, E., Salerno, J.

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High-speed InP/GaInAs heterojunction phototransistor on InP-on-Si grown by organometallic vapor phase epitaxy von AINA, O, SERIO, M, MATTINGLY, M, O'CONNOR, J, SHASTRY, S. K, HILL, D. S, SALERNO, J. P, FERM, P

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Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth von Tsaur, B-Y, McClelland, R W, Fan, J C C, Gale, R P, Salerno, J P, Vojak, B A, Bozler, C O

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Low-threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy von CHOI, H. K, LEE, J. W, SALERNO, J. P, CONNORS, M. K, TSAUR, B.-Y, FAN, J. C. C

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Elastic scattering of exciton polaritons by neutral impurities von KOTELES, E. S, LEE, J, SALERNO, J. P, VASSELL, M. O

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High-purity InP grown on Si by organometallic vapor phase epitaxy von Aina, O., Mattingly, M., Bates, J. R., Coggins, A., O’Connor, J., Shastry, S. K., Salerno, J. P., Davis, A., Lorenzo, J. P., Jones, K. S.

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AlGaAs defect characterization in high electron mobility transistors by thermally stimulated drain conductance von Chi, J.Y., Holmstrom, R.P., Salerno, J.P.

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Influence of elastic scattering from neutral impurities on the exciton-polariton photoluminescence lineshape in GaAs von Lee, Johnson, Koteles, Emil S., Vassell, M.O., Salerno, J.P.

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Effect of traps on low-temperature high electron mobility transistor characteristics von Chi, J.Y., Holmstrom, R.P., Salerno, J.P.

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Molecular beam epitaxial growth of Si on CoSi2 substrates von DITCHEK, B. M, SALERNO, J. P, GORMLEY, J. V

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Dependence of the exciton-polariton photoluminescence lineshape in GaAs on epitaxial layer thickness von Bloss, W.L., Koteles, E.S., Brody, E.M., Sowell, B.J., Salerno, J.P., Gormley, J.V.

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Solid‐Phase Epitaxial Crystallization of Amorphous Ge on Si von Tsaur, B. Y., Fan, J. C. C., Salerno, J. P., Anderson, C. H., Gale, R. P., Davis, F. M., Kennedy, E. F., Sheng, T. T.

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Transmission electron microscopy of GaAs permeable base transistor structures grown by vapor phase epitaxy von Vojak, B. A., Salerno, J. P., Flanders, D. C., Alley, G. D., Bozler, C. O., Nichols, K. B., McClelland, R. W., Economou, N. P., Lincoln, G. A., Murphy, R. A., Lindley, W. T., Johnson, G. D.

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A high quantum efficiency GaInAs-InP photodetector-on-silicon substrate von Razeghi, M., Omnes, F., Blondeau, R., Maurel, Ph, Defour, M., Acher, O., Vassilakis, E., Mesquida, G., Fan, J. C. C., Salerno, J. P.

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High resolution miniature AMLCDs for projection and head-mounted systems von Spitzer, M.B., Salerno, J.P.

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Equipotential distribution in the quantum Hall effect von SICHEL, E. K, SAMPLE, H. H, SALERNO, J. P

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Transmission electron microscopy of GaAs grown over submicrometer-period tungsten gratings von Vojak, B. A., Salerno, J. P.

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Time-resolved photoluminescence study of molecular beam epitaxial growth induced defect lines in GaAs von STEINER, T, THEWALT, M. L. W, KOTELES, E. S, SALERMO, J. P

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