Analysis of reflectance and modulation spectroscopic lineshapes in optoelectronic device structures von Hosea, T.J.C., Cripps, S.A., Sale, T.E., Hild, K.

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Photomodulated reflectance as a valuable nondestructive process tool for VCSELs von Sale, T.E., Hosea, T.J.C., Thomas, P.J.S.

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Investigation of 1.3-μm GaInNAd vertical-cavity surface-emitting lasers (VCSELs) using temperature, high-pressure, and modeling techniques von Knowles, G., Fehse, R., Tomic, S., Sweeney, S.J., Sale, T.E., Adams, A.R., O'Reilly, E.P., Steinle, G., Riechert, H.

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Investigation of 1.3-/spl mu/m GaInNAs vertical-cavity surface-emitting lasers (VCSELs) using temperature, high-pressure, and modeling techniques von Knowles, G., Fehse, R., Tomic, S., Sweeney, S.J., Sale, T.E., Adams, A.R., O'Reilly, E.P., Steinle, G., Riechert, H.

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Investigation of 1.3-[micro]m GaInNAs vertical-cavity surface-emitting lasers (VCSELs) using temperature, high-pressure, and modeling techniques von Knowles, G, Fehse, R, Tomic, S, Sweeney, S.J, Sale, T.E, Adams, A.R, O'Reilly, E.P, Steinle, G, Riechert, H

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Quantifying the Effect of Indirect Carrier Leakage on Visible Al(GaInP) Lasers Using High Pressures and Low Temperatures von Sweeney, S.J., Knowles, G., Sale, T.E., Adams, A.R.

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Assessing the Performance of Visible (665 nm) Vertical Cavity Surface Emitting Lasers Using High Pressure and Low Temperature Techniques von Knowles, G., Sweeney, S.J., Sale, T.E., Adams, A.R.

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Optical properties of MOVPE grown Al Ga1−As quantum wells von Roberts, J.S., David, J.P.R., Chen, Y.H., Sale, T.E.

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Gain-Cavity Alignment in Efficient Visible (660 nm) VCSELs Studied Using High Pressure Techniques von Sale, T.E., Sweeney, S.J., Knowles, G., Adams, A.R.

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Quantum-Well and Cavity-Mode Resonance Effects in a Vertical-Cavity Surface-Emitting Laser Structure, Observed by Photoreflectance Using Hydrostatic Pressure and Temperature Tuning von Vicente, P. M. A., Thomas, P. J. S., Lancefield, D., Sale, T. E., Hosea, T. J. C., Adams, A. R., Klar, P. J., Raymond, A.

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Reflectance and Photomodulated Reflectance Studies of Cavity Mode and Excitonic Transitions in an InGaAs/GaAs/AlAs/AlGaAs VCSEL Structure von Klar, P.J., Rowland, G., Sale, T.E., Hosea, T.J.C., Grey, R.

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Reflectance and photomodulated reflectance studies of an InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser structure under hydrostatic pressure von Klar, P.J., Vicente, P.M.A., Sale, T.E., Hosea, T.J.C., Adams, A.R., Raymond, A.

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Wide operating wavelength range and low threshold current In/sub 0.24/Ga/sub 0.76/As/GaAs vertical-cavity surface-emitting lasers von Sale, T.E., Woodhead, J., Grey, R., Robson, P.N.

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Room temperature visible (683-713 nm) all-AlGaAs vertical-cavity surface-emitting lasers (VCSELs) von Sale, T.E., Roberts, J.S., Woodhead, J., David, J.P.R., Robson, P.N.

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Low-threshold piezoelectric-strained InGaAs-GaAs QW lasers grown on (211)B oriented GaAs substrates von Sale, T.E., Roberts, J.S., Whitbread, N.D., Robson, P.N.

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High power, high speed surface emitting LEDs with an InGaAs quantum well von Hirotani, M., Sale, T.E., Woodhead, J., Roberts, J.S., Robson, P.N., Saka, T., Kato, T.

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High purity AlGaAs from methyl-based precursors using in situ gettering of alkoxides von Roberts, J.S., David, J.P.R., Sale, T.E., Tihanyi, P.L.

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Optical properties of MOVPE grown AlxGa1−xAs quantum wells von Roberts, J.S., David, J.P.R., Chen, Y.H., Sale, T.E.

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Influence of Quantum Well and Cavity Features on the Spectral, Angle- and Temperature-Dependent Emission of 650 nm Resonant Cavity LEDs von Hild, K., Sale, T.E., Hosea, T.J.C., Hirotani, M., Mizuno, Y., Kato, T.

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Visible (683 to 713 nm) room-temperature AlGaAs vertical cavity surface emitting lasers (VCSELs) von Sale, T.E., Roberts, J.S., Woodhead, J., David, J.P.R., Robson, P.N.

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