Fluorescence lifetime imaging microscopy and polar-plot analysis of gallium selenide crystals von Zahner, S., Kador, L., Allakhverdiev, K. R., Salaev, E. Yu, Huseyinoğlu, M. F.

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Resonance enhancement of nonlinear photoluminescence in gallium selenide and related compounds von Angermann, Ch, Karich, P, Kador, Lothar, Allakhverdiev, K R, Baykara, T, Salaev, E Yu

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Anisotropy of optical absorption in GaSe studied by midinfrared spectroscopy von Allakhverdiev, K., Fernelius, N., Gashimzade, F., Goldstein, J., Salaev, E., Salaeva, Z.

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Photoluminescence frequency up-conversion in GaSe single crystals as studied by confocal microscopy von Fan, Y., Bauer, M., Kador, L., Allakhverdiev, K. R., Salaev, E. Yu

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Anisotropy of two-photon absorption in gallium selenide at 1064 nm von ALLAKHVERDIEV, K. R, BAYKARA, T, JOOSTEN, S, GÜNAY, E, KAYA, A. A, KULIBEKOV, A, SEILMEIER, A, SALAEV, E. Yu

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Optical absorption in GaSe under high-density ultrashort laser pulses von Kulibekov, A.M., Allakhverdiev, K., Guseinova, D.A., Salaev, E.Yu, Baran, O.

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Confocal photoluminescence studies on GaSe single crystals von Fan, Y, Schittkowski, T, Bauer, M, Kador, L, Allakhverdiev, K.R, Salaev, E.Yu

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Phase-matched second-harmonic generation at 789.5 nm in a GaSe crystal von Kador, L., Haarer, D., Allakhverdiev, K. R., Salaev, E. Yu

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Size-induced effects in gallium selenide electronic structure: The influence of interlayer interactions von Rybkovskiy, D. V., Arutyunyan, N. R., Orekhov, A. S., Gromchenko, I. A., Vorobiev, I. V., Osadchy, A. V., Salaev, E. Yu, Baykara, T. K., Allakhverdiev, K. R., Obraztsova, E. D.

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Second-harmonic generation in GaSe crystals investigated with the Maker fringe technique von Kador, L., Braun, M., Allakhverdiev, K.R., Salaev, E.Yu

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The nature of negative linear expansion in layer crystals C, Bn, GaS, GaSe and InSe von Belenkii, G.L., Salaev, E.Yu, Suleimanov, R.A., Abdullaev, N.A., Shteinshraiber, V.Ya

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Davydov doublets in Raman spectra of ϵ-GaSe von Allakhverdiev, K.R., Salaev, E.Yu, Tagyev, M.M., Babaev, S.S., Genzel, L.

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Neutron diffraction, infrared, and raman scattering investigations of the layered GaSxSe1−x system von Abdullaev, G. B., Allakhverdiev, K. R., Nani, R. Kh, Salaev, E. Yu, Tagyev, M. M.

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The nature of temperature dependence of energy gaps in layer semiconductors von Belenkii, G.L., Salaev, E.Yu, Suleimanov, R.A., Abdullaev, N.A.

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Vibrational Spectrum of InSe von Belenkii, G. L., Alieva, L. N., Nani, R. Kh, Salaev, E. Yu

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Angular behaviour of the polar optical phonons in AIIIBVI layered semiconductors von Allakhverdiev, K. R., Babaev, S. S., Salaev, E. Yu, Tagyev, M. M.

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Anomalous behaviour of the Urbach edge and phase transitions in TlGaSe2 von ALLAKHVERDIEV, K. R, ALDZANOV, M. A, MAMEDOV, T. G, SALAEV, E. YU

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Light scattering in TlInSe2 single crystals von Allakhverdiev, K. R., Salaev, E. Yu, Safarov, N. Yu, Vodopyanov, L. K., Golubev, L. V.

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Raman scattering and phase transformations of TlGaSe2 and TlGaS2 under pressure von Vinogradov, E. A., Zhizhin, G. N., Melnik, N. N., Subbotin, S. I., Panfilov, V. V., Allakhverdiev, K. R., Salaev, E. Yu, Nani, R. Kh

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Photoluminescence of ternary layered crystals TlGaS2 von Abdullaeva, S. G., Mamedov, N. T., Mustafaev, F. A., Salaev, E. Yu

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