Hot-hole-induced negative oxide charges in n-MOSFETs von Weber, W., Brox, M., Thewes, R., Saks, N.S.

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Oxide and interface degradation resulting from substrate hot-hole injection in metal-oxide-semiconductor field-effect transistors at 295 and 77 K von Van den bosch, Geert, Groeseneken, Guido, Maes, Herman E., Klein, Richard B., Saks, Nelson S.

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Investigation of the charge pumping current in metal-oxide-semiconductor structures von GHIBAUDO, G, SAKS, N. S

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A time domain analysis of the charge pumping current von GHIBAUDO, G, SAKS, N. S

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Determination of interface trap capture cross sections using three-level charge pumping von Saks, N.S., Ancona, M.G.

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Geometric component of charge pumping current in nMOSFETs due to low-temperature irradiation von Witczak, S.C., King, E.E., Saks, N.S., Lacoe, R.C., Shaneyfelt, M.R., Hash, G.L., Hjalmarson, H.P., Mayer, D.C.

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Lateral distribution of hot-carrier-induced interface traps in MOSFETs von Ancona, M.G., Saks, N.S., McCarthy, D.

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Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC von Saks, N.S., Das, Mrinal K., Ryu, Sei Hyung, Lipkin, Lori A., Agarwal, Anant K., Williams, John R., Richmond, Jim, Palmour, John W.

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Hot-hole-induced negative oxide charges in n-MOSFETs von Weber, W., Brox, M., Thewes, R., Saks, N.S.

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Generation of Interface States by Ionizing Radiation in Very Thin MOS Oxides von Saks, Nelson S., Ancona, Mario G., Modolo, John A.

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Spatial uniformity of interface trap distribution in MOSFETs von Saks, N.S., Ancona, M.G.

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Response of MNOS Capacitors to Ionizing Radiation at 80°k von Saks, Nelson S.

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Observation of hot-hole injection in NMOS transistors using a modified floating-gate technique von Saks, N.S., Heremans, P.L., van den Hove, L., Maes, H.E., De Keersmaecker, R.F., Declerck, G.J.

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Fabrication of surface-channel charge-coupled devices with ultralow density of interface states von Saks, Nelson S.

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Interface state trapping and dark current generation in buried-channel charge-coupled devices von Saks, Nelson S.

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A New Technique for Hardening CCD Imagers by Suppression of Interface State Generation von Saks, Nelson S.

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Method for fabricating MNOS structures utilizing hydrogen ion implantation von SAKS, NELSON S

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Charge transfer in a p-surface channel CCD as a function of bias charge von Saks, N.S.

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Symposium K: Silicon Carbide - Materials, Processing, and Devices von Saddow, Stephen E, Saks, Nelson S, Larkin, David J, Schoener, Adolf

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Optical and electrical properties of boron-implanted amorphous germanium thin films von Anderson, Gordon Wood, Davey, John E., Comas, James, Saks, Nelson S., Lucke, William H.

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