Valley polarized conductance quantization in bilayer graphene narrow quantum point contact von Sakanashi, Kohei, Wada, Naoto, Murase, Kentaro, Oto, Kenichi, Kim, Gil-Ho, Watanabe, Kenji, Taniguchi, Takashi, Bird, Jonathan P., Ferry, David K., Aoki, Nobuyuki

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Signature of Spin-Resolved Quantum Point Contact in p‑Type Trilayer WSe2 van der Waals Heterostructure von Sakanashi, Kohei, Krüger, Peter, Watanabe, Kenji, Taniguchi, Takashi, Kim, Gil-Ho, Ferry, David K, Bird, Jonathan P, Aoki, Nobuyuki

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Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene von Nathawat, Jubin, Mansaray, Ishiaka, Sakanashi, Kohei, Wada, Naoto, Randle, Michael D., Yin, Shenchu, He, Keke, Arabchigavkani, Nargess, Dixit, Ripudaman, Barut, Bilal, Zhao, Miao, Ramamoorthy, Harihara, Somphonsane, Ratchanok, Kim, Gil-Ho, Watanabe, Kenji, Taniguchi, Takashi, Aoki, Nobuyuki, Han, Jong E., Bird, Jonathan P.

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Investigation of laser-induced-metal phase of MoTe2 and its contact property via scanning gate microscopy von Sakanashi, Kohei, Ouchi, Hidemitsu, Kamiya, Kota, Krüger, Peter, Miyamoto, Katsuhiko, Omatsu, Takashige, Ueno, Keiji, Watanabe, Kenji, Taniguchi, Takashi, Bird, Jonathan P, Aoki, Nobuyuki

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Transient Response of h‑BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping von Nathawat, Jubin, Zhao, Miao, Kwan, Chun-Pui, Yin, Shenchu, Ramamoorthy, Harihara, He, Guanchen, Somphonsane, Ratchanok, Matsumoto, Naoki, Sakanashi, Kohei, Kida, Michio, Aoki, Nobuyuki, Jin, Zhi, Kim, Yunseob, Kim, Gil-Ho, Watanabe, Kenji, Taniguchi, Takashi, Bird, Jonathan P

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Theory of in-plane current induced spin torque in metal/ferromagnet bilayers von Sakanashi, Kohei, Sigrist, Manfred, Chen, Wei

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Signature of Spin-Resolved Quantum Point Contact in p-Type Trilayer WSe 2 van der Waals Heterostructure von Sakanashi, Kohei, Krüger, Peter, Watanabe, Kenji, Taniguchi, Takashi, Kim, Gil-Ho, Ferry, David K., Bird, Jonathan P., Aoki, Nobuyuki

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Investigation of laser-induced-metal phase of MoTe2 and its contact property via scanning gate microscopy von Sakanashi, Kohei, Ouchi, Hidemitsu, Kamiya, Kota, Kruger, Peter, Miyamoto, Katsuhiko, Omatsu, Takashige, Ueno, Keiji, Watanabe, Kenji, Taniguchi, Takashi, Bird, Jonathan P., Aoki, Nobuyuki

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Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene von Nathawat, Jubin, Mansaray, Ishiaka, Sakanashi, Kohei, Wada, Naoto, Randle, Michael D., Yin, Shenchu, He, Keke, Arabchigavkani, Nargess, Dixit, Ripudaman, Barut, Bilal, Zhao, Miao, Ramamoorthy, Harihara, Somphonsane, Ratchanok, Kim, Gil-Ho, Watanabe, Kenji, Taniguchi, Takashi, Aoki, Nobuyuki, Han, Jong E., Bird, Jonathan P.

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Investigation of laser-induced-metal phase of MoTe 2 and its contact property via scanning gate microscopy von Sakanashi, Kohei, Ouchi, Hidemitsu, Kamiya, Kota, Krüger, Peter, Miyamoto, Katsuhiko, Omatsu, Takashige, Ueno, Keiji, Watanabe, Kenji, Taniguchi, Takashi, Bird, Jonathan P, Aoki, Nobuyuki

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Quantized exciton-exciton annihilation in monolayer WS2 on SrTiO3 substrate with atomically flat terraces von Kajino, Yuto, Sakanashi, Kohei, Aoki, Nobuyuki, Watanabe, Kenji, Taniguchi, Takashi, Oto, Kenichi, Yamada, Yasuhiro

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Quantized exciton-exciton annihilation in monolayer WS 2 on SrTiO 3 substrate with atomically flat terraces von Kajino, Yuto, Sakanashi, Kohei, Aoki, Nobuyuki, Watanabe, Kenji, Taniguchi, Takashi, Oto, Kenichi, Yamada, Yasuhiro

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Tuning weak localization in single-layer disordered SnSe 2 /graphene/h-BN field-effect device von Chen, Wei-Chen, Chuang, Chiashain, Wang, Tian-Hsin, Yeh, Ching-Chen, Chen, Sheng-Zong, Sakanashi, Kohei, Kida, Michio, Lin, Li-Hung, Lee, Po-Han, Wu, Po-Chen, Wang, Sheng-Wen, Watanabe, Kenji, Taniguchi, Takashi, Hsieh, Ya-Ping, Aoki, Nobuyuki, Liang, Chi-Te

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Tuning weak localization in single-layer disordered SnSe2/graphene/h-BN field-effect device von Chen, Wei-Chen, Chuang, Chiashain, Wang, Tian-Hsin, Yeh, Ching-Chen, Chen, Sheng-Zong, Sakanashi, Kohei, Kida, Michio, Lin, Li-Hung, Lee, Po-Han, Wu, Po-Chen, Wang, Sheng-Wen, Watanabe, Kenji, Taniguchi, Takashi, Hsieh, Ya-Ping, Aoki, Nobuyuki, Liang, Chi-Te

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Study of the contact property between 2H-MoTe2 and 1T-MoTe2 induced by laser irradiation in vacuum von Xie, Tianshun, Ikeda, Shuntaro, Sakanashi, Kohei, Ueno, Keiji, Aoki, Nobuyuki

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Study of contact property between 1T’- and 2H-MoTe2 for low barrier height von Xie, Tianshun, Ouchi, Hidemitsu, Sakanashi, Kohei, Ueno, Keiji, Aoki, Nobuyuki

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Study on characteristics of contact between 1T'-MoTe2 and 2H-MoTe2 von Xie, Tianshun, Ouchi, Hidemitsu, Sakanashi, Kohei, Ueno, Keiji, Aoki, Nobuyuki

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Fabrication of MoTe2 In-Plane TFET von Ouchi, Hidemitsu, Sakanashi, Kohei, Kruger, Peter, Bird, Jonathan, Aoki, Nobuyuki

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Realization of quantum point contact in p-type WSe2 von Sakanashi, Kohei, Krueger, Peter, Bird, Jonathan, Watanabe, Kenji, Taniguchi, Takashi, Kim, Gil-Ho, Aoki, Nobuyuki

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Realization of p-type operation in MoTe2-TFET von Ikeda, Shuntaro, Ouchi, Hidemitsu, Sakanashi, Kohei, Krueger, Peter, Watanabe, Kenji, Taniguchi, Takashi, Bird, Jonathan, Aoki, Nobuyuki

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