Which surfactant shall we choose for the heteroepitaxy of Ge/Si(001) ? -Bi as a surfactant with small self-incorporation von SAKAMOTO, K, KYOYA, K, MIKI, K, MATSUHATA, H, SAKAMOTO, T

Volltext

Conducting atomic force microscopy studies on local electrical properties of ultrathin SiO2 films von Ando, Atsushi, Hasunuma, Ryu, Maeda, Tatsuro, Sakamoto, Kunihiro, Miki, Kazushi, Nishioka, Yasushiro, Sakamoto, Tsunenori

Volltext

Abrupt Si/Ge/Si(001) Interfaces Fabricated with Bi as a Surfactant von Sakamoto, Kunihiro, Matsuhata, Hirofumi, Kyoya, Ken'ichi, Kazushi Miki, Kazushi Miki, Tsunenori Sakamoto, Tsunenori Sakamoto

Volltext

Spatially controlled formation of an atomically flat Si(001) surface by annealing with a direct current in an ultrahigh vacuum von ANDO, A, SAKAMOTO, K, MIKI, K, MATSUMOTO, K, SAKAMOTO, T

Volltext

Ge epitaxial overlayers on Si(001) studied by surface-sensitive X-ray absorption fine structure : evidence for strain-induced surface rearrangement von OYANAGI, H, SAKAMOTO, K, SHIODA, R, SAKAMOTO, T

Volltext

Local structures of isovalent and heterovalent dilute impurities in Si crystal probed by fluorescence x-ray absorption fine structure von Wei, Shiqiang, Oyanagi, Hiroyuki, Kawanami, Hitoshi, Sakamoto, Kunihiro, Sakamoto, Tsunenori, Tamura, Kazuhisa, Saini, Naurang L., Uosaki, Kohei

Volltext

V-shaped gate high electron mobility transistor (VHEMT) von ISHII, M, MATSUMOTO, K, MOROZUMI, H, SUGIYAMA, Y, SAKAMOTO, T

Volltext

Heterointerfaces in Strained-Layer Superlattices Studied by Surface-Sensitive XAFS von Oyanagi, Hiroyuki, Sakamoto, Kunihiro, Sakamoto, Tsunenori

Volltext

Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface von Ando, Atsushi, Sakamoto, Kunihiro, Miki, Kazushi, Matsumoto, Kazuhiko, Sakamoto, Tsunenori

Volltext

Reflection high-energy electron diffraction intensity oscillations during GexSi1-x MBE growth on Si(001) substrates von SAKAMOTO, K, SAKAMOTO, T, NAGAO, S, HASHIGUCHI, G, KUNIYOSHI, K, BANDO, Y

Volltext

Structural model for the negative electron affinity surface of O/Cs/Si(001)2×1 von ABUKAWA, T, KONO, S, SAKAMOTO, T

Volltext

Effect of a surfactant on the growth of Si/Ge heterostructures von Sakamoto, Kunihiro, Miki, Kazushi, Sakamoto, Tsunenori, Yamaguchi, Hirotaka, Oyanagi, Hiroyuki, Matsuhata, Hirohumi, Kyoya, Ken'ichi

Volltext

Is the c(4×4) reconstruction of Si(001) associated with the presence of carbon? von Miki, Kazushi, Sakamoto, Kunihiro, Sakamoto, Tsunenori

Volltext

Phase-locked epitaxy using RHEED intensity oscillation von SAKAMOTO, T, FUNABASHI, H, OHTA, K, NAKAGAWA, T, KAWAI, N. J, KOJIMA, T

Volltext

Anisotropic surface migration during MBE on stepped surfaces of vicinal Si(111) von Sakamoto, Kunihiro, Miki, Kazushi, Sakamoto, Tsunenori

Volltext

GE DISTRIBUTION IN GE-N/SI-M STRAINED-LAYER SUPERLATTICES von MIKI, K, UNOKI, S, MATSUHATA, H, SAKAMOTO, K, SAKAMOTO, T

Volltext

Observation of direct band gap properties in GenSim strained-layer superlattices von OKUMURA, H, MIKI, K, MISAWA, S, SAKAMOTO, K, SAKAMOTO, T, YOSHIDA, S

Volltext

Japanese Superconducting Computer von Sakamoto, Tsunenori

Volltext

Layer-by-layer sublimation observed by reflection high-energy electron diffraction intensity oscillation in a molecular beam epitaxy system von KOJIMA, T, KAWAI, N. J, NAKAGAWA, T, OHTA, K, SAKAMOTO, T, KAWASHIMA, M

Volltext

Electro- and photoreflectance of ultrathin Ge/Si superlattices grown by phase-locked epitaxy von ASAMI, K, MIKI, K, SAKAMOTO, K, SAKAMOTO, T, GONDA, S

Volltext