Suppression of 193-nm photoresist deformation by H2 addition to fluorocarbon plasma in via-hole etching von YONEKURA, Kazumasa, YOSHIKAWA, Kazunori, FUJIWARA, Yuji, SAKAMORI, Shigenori, FUJIWARA, Nobuo, KOSAKA, Takayoshi, OHKUNI, Mitsuhiro, TATEIWA, Kenji

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TRANSFORMATION OF DENSE CONTACT HOLES DURING SiO2 ETCHING von Sakamori, S, Fujiwara, N, Miyatake, H, Oikawa, K, Yamanaka, M, Sasaki, T

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Effect of Electron Shading on Gate Oxide Degradation von Sakamori, Shigenori, Maruyama, Takahiro, Fujiwara, Nobuo, Miyatake, Hiroshi

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Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching von Yonekura, Kazumasa, Kiritani, Masahide, Sakamori, Shigenori, Yokoi, Takahiro, Fujiwara, Nobuo, Miyatake, Hiroshi

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Suppression of 193-nm photoresist deformation by H 2 addition to fluorocarbon plasma in via-hole etching von Yonekura, Kazumasa, Yoshikawa, Kazunori, Fujiwara, Yuji, Sakamori, Shigenori, Fujiwara, Nobuo, Kosaka, Takayoshi, Ohkuni, Mitsuhiro, Tateiwa, Kenji

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Evaluation of electron shading charge buildup damage using metal-nitride-oxide-silicon capacitors von SAKAMORI, S, MARUYAMA, T, FUJIWARA, N, MIYATAKE, H, YONEDA, M

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Investigation of ash damage to ultralow- k inorganic materials von Yonekura, Kazumasa, Sakamori, Shigenori, Goto, Kinya, Matsuura, Masazumi, Fujiwara, Nobuo, Yoneda, Masahiro

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Epitaxial growth of metal(CoSi2)/insulator(CaF2) nanometer-thick layered structure on Si(111) von WATANABE, M, MURATAKE, S, FUJIMOTO, H, SAKAMORI, S, ASADA, M, ARAI, S

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PATTERN FORMING METHOD AND SUBSTRATE von SAKAMORI SHIGENORI, HARADA GENKI

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Epitaxial growth and electrical conductance of metal(CoSi2)/insulator(CaF2) nanometer-thick layered structures on Si(111) von WATANABE, M, MURATAKE, S, SUEMASU, T, FUJIMOTO, H, SAKAMORI, S, ASADA, M, ARAI, S

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Reduction in Contact Resistance with In Situ  O 2 Plasma Treatment von Yonekura, Kazumasa, Sakamori, Shigenori, Kawai, Kenji, Miyatake, Hiroshi

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Transformation of Dense Contact Holes during SiO 2 Etching von Sakamori, Shigenori, Fujiwara, Nobuo, Miyatake, Hiroshi, Oikawa, Kota, Yamanaka, Michinari, Sasaki, Tomoyuki

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Reduction in contact resistance with in situ O2 plasma treatment von YONEKURA, K, SAKAMORI, S, KAWAI, K, MIYATAKE, H

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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE von SAKAMORI SHIGENORI

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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF von SAKAMORI SHIGENORI

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MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE von SAKAMORI SHIGENORI

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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE von SAKAMORI SHIGENORI, OGINO MASARU

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Semiconductor device having improved contact hole structure, and method of manufacturing the same von Sakamori, Shigenori

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Apparatus for and method of etching von SAKAMORI SHIGENORI

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Apparatus for and method of etching von Sakamori, Shigenori

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