ACTIVATION ENERGY OF THE CONDUCTANCE OF p-n-4H-SiCAl STRUCTURES DOPED WITH ALUMINUM BY THE METHOD OF LOW-TEMPERATURE DIFFUSION von Zhuraev, Kh.N, Yusupov, A, Gulyamov, A.G, Khazhiev, M.U, Saidov, D.Sh, Adilov, N.B

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Influence of Ge content on formation of radiation defects in Si 1− x Ge x solid solutions von Atabaev, I.G., Matchanov, N.A., Yusupov, A., Saidov, D.Sh, Saidov, M.S.

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Comparison of electron irradiation on the formation of surface defects in situ and post thin-film LiF/Si(111) deposition von Sharopov, U.B., Kaur, K., Kurbanov, M.K., Saidov, D.Sh, Nurmatov, Sh.R., Sharipov, M.M., Egamberdiev, B.E.

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Influence of Ge content on formation of radiation defects in Si1-xGex solid solutions von ATABAEV, I. G, MATCHANOV, N. A, YUSUPOV, A, SAIDOV, D. Sh, SAIDOV, M. S

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Modeling the operation of a 10 kW grid-tied photovoltaic power plant and its features von Yuldoshev, Isroil, Kurbanov, Yunus, Rustamova, Shakhnoza, Yuldashev, Farrukh

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Homogeneity of high-resistivity p-Si1 − xGex〈Au〉 crystals von Atabaev, I. G., Matchanov, N. A., Bakhranov, E. N., Khazhiev, M. U.

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Electrical properties of p-Si1 − x GexAu-Based p-i-n structures and Schottky barriers von Atabaev, I. G., Matchanov, N. A., Bakhranov, E. N., Khazhiev, M. U.

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