Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics von Park, Jounghun, Yoon, Gilsang, Go, Donghyun, Kim, Donghwi, Chul Sagong, Hyun Chul, Kim, Jungsik, Lee, Jeong-Soo

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Analytic Model of S/D Series Resistance in Trigate FinFETs With Polygonal Epitaxy von Chang-Woo Sohn, Chang Yong Kang, Myung-Dong Ko, Do-Young Choi, Hyun Chul Sagong, Eui-Young Jeong, Chan-Hoon Park, Sang-Hyun Lee, Ye-Ram Kim, Chang-Ki Baek, Jeong-Soo Lee, Lee, J. C., Yoon-Ha Jeong

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Device Design Guidelines for Nanoscale FinFETs in RF/Analog Applications von Chang-Woo Sohn, Chang Yong Kang, Rock-Hyun Baek, Do-Young Choi, Hyun Chul Sagong, Eui-Young Jeong, Chang-Ki Baek, Jeong-Soo Lee, Lee, J. C., Yoon-Ha Jeong

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Simple S/D Series Resistance Extraction Method Optimized for Nanowire FETs von Kim, Ye-Ram, Baek, Chang-Ki, Lee, Jeong-Soo, Jeong, Yoon-Ha, Lee, Sang-Hyun, Sohn, Chang-Woo, Choi, Do-Young, Sagong, Hyun-Chul, Kim, Sungho, Jeong, Eui-Young, Kim, Dong-Won, Hong, Hyeongsun

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Interfacial-Layer-Driven Dielectric Degradation and Breakdown of HfSiON/SiON Gate Dielectric nMOSFETs von CHOI, Do-Young, KYONG TAEK LEE, BAEK, Chang-Ki, CHANG WOO SOHN, HYUN CHUL SAGONG, JUNG, Eui-Young, LEE, Jeong-Soo, JEONG, Yoon-Ha

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Analysis of Abnormal Upturns in Capacitance-Voltage Characteristics for MOS Devices With High- k Dielectrics von Chang-Woo Sohn, Hyun Chul Sagong, Eui-Young Jeong, Do-Young Choi, Min Sang Park, Jeong-Soo Lee, Chang Yong Kang, Jammy, R, Yoon-Ha Jeong

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RF and hot carrier effects in metal gate/high-k dielectric nMOSFETs at cryogenic temperature von Hyun Chul Sagong, Kyong Taek Lee, Seung-Ho Hong, Hyun-Sik Choi, Gil-Bok Choi, Rock-Hyun Baek, Seung-Hyun Song, Min-Sang Park, Jae Chul Kim, Yoon-Ha Jeong, Sung-Woo Jung, Chang Yong Kang

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A New Physical 1/f Noise Model for Double-Stack High-k Gate-Dielectric MOSFETs von SEUNG HYUN SONG, CHOI, Hyun-Sik, JEONG, Yoon-Ha, BAEK, Rock-Hyun, CHOI, Gil-Bok, PARK, Min-Sang, KYUNG TAEK LEE, HYUN CHUL SAGONG, LEE, Sang-Hyun, SUNG WOO JUNG, CHANG YONG KANG

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Comprehensive Study of Quasi-Ballistic Transport in High- \kappa/Metal Gate nMOSFETs von Hyun Chul Sagong, Chang Yong Kang, Chang-Woo Sohn, Kanghoon Jeon, Eui-Young Jeong, Do-Young Choi, Chang-Ki Baek, Jeong-Soo Lee, Lee, J. C., Yoon-Ha Jeong

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Reliability of HFO2/SIO2 dielectric with strain engineering using CESL stressor von Jae Chul Kim, Kyong Taek Lee, Seung Hyun Song, Min Sang Park, Seung Ho Hong, Gil Bok Choi, Hyun Sik Choi, Rock Hyun Baek, Hyun Chul Sagong, Yoon-Ha Jeong, Sung Woo Jung, Chang Young Kang

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New Investigation of Hot-Carrier Degradation on RF Small-Signal Parameter and Performance in High- k/Metal-Gate nMOSFETs von Sagong, Hyun Chul, Kang, Chang Yong, Sohn, Chang-Woo, Choi, Do-Young, Jeong, Eui-Young, Baek, Chang-Ki, Lee, Jeong-Soo, Jeong, Yoon-Ha

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A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs von KYONG TAEK LEE, CHANG YONG KANG, BYOUNG HUN LEE, BERSUKER, Gennadi, TSENG, Hsing-Huang, JAMMY, Raj, JEONG, Yoon-Ha, CHOI, Hyun-Sik, HONG, Seung-Ho, CHOI, Gil-Bok, JAE CHUL KIM, SONG, Seung-Hyun, BAEK, Rock-Hyun, PARK, Min-Sang, HYUN CHUL SAGONG

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Prediction of Internal Temperature of Starter Solenoid Via PoF-Based Fault Reproduction Experiment von Lee, Sanghoon, Yang, Dabin, Lee, Sanghak, Sagong, Hyun Chul, Lee, Jongsoo

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Improved Degradation and Recovery Characteristics of SiGe p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors under Negative-Bias Temperature Stress von Choi, Do-Young, Sohn, Chang-Woo, Sagong, Hyun Chul, Jung, Eui-Young, Kang, Chang Yong, Lee, Jeong-Soo, Jeong, Yoon-Ha

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Effects of N-Rich TiN Capping Layer on Reliability in Gate-Last High-k/Metal Gate MOSFETs von Bae, Kidan, Lee, Kyung Taek, Sagong, Hyun Chul, Choe, Minhyeok, Lee, Hyunwoo, Kim, Sungeun, Kim, Kwang-Soo, Park, Junekyun, Pae, Sangwoo, Park, Jongwoo

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The Effect of a Si Capping Layer on RF Characteristics of High- k /Metal Gate SiGe Channel pMOSFETs von Min Sang Park, Kyong Taek Lee, Chang Yong Kang, Gil-Bok Choi, Hyun Chul Sagong, Chang Woo Sohn, Byoung-Gi Min, Jungwoo Oh, Majhi, Prashant, Hsing-Huang Tseng, Lee, Jack C, Jeong-Soo Lee, Jammy, Raj, Yoon-Ha Jeong

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Enhanced Reliability of 7-nm Process Technology Featuring EUV von Choi, Kihyun, Shim, Hyewon, Park, Junekyun, Cho, Youngwoo, Rhee, Hwasung, Pae, Sangwoo, Sagong, Hyun Chul, Kang, Wonchang, Kim, Hyunjin, Hai, Jiang, Lee, Miji, Kim, Bomi, Lee, Mi-Ji, Lee, Soonyoung

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Comparative study of geometry-dependent capacitances of planar FETs and double-gate FinFETs: Optimization and process variation von Chang-Woo Sohn, Chang Yong Kang, Rock-Hyun Baek, Do-Young Choi, Hyun Chul Sagong, Eui-Young Jeong, Jeong-Soo Lee, Kirsch, P., Jammy, R., Lee, J. C., Yoon-Ha Jeong

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New investigation of hot carrier degradation of RF small-signal parameters in high-k/metal gate nMOSFETs von Hyun Chul Sagong, Chang Yong Kang, Chang-Woo Sohn, Min Sang Park, Do-Young Choi, Eui-Young Jeong, Lee, J C, Yoon-Ha Jeong

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Characterization of Gate-All-Around Si-NWFET, including Rsd, cylindrical coordinate based 1/f noise and hot carrier effects von Rock-Hyun Baek, Hyun-Sik Choi, Hyun Chul Sagong, Sang-Hyun Lee, Gil-Bok Choi, Seung Hyun Song, Chan-Hoon Park, Jeong-Soo Lee, Yoon-Ha Jeong, Chang-Ki Baek, Dae Mann Kim, Yun Young Yeoh, Kyoung Hwan Yeo, Dong-Won Kim, Kinam Kim

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