In situ x-ray diffraction study of graphitic carbon formed during heating and cooling of amorphous-C/Ni bilayers von Saenger, K. L., Tsang, J. C., Bol, A. A., Chu, J. O., Grill, A., Lavoie, C.

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Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates von Saenger, K. L., de Souza, J. P., Fogel, K. E., Ott, J. A., Reznicek, A., Sung, C. Y., Sadana, D. K., Yin, H.

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Extremely high electron mobility in Si/SiGe modulation-doped heterostructures von Ismail, K., Arafa, M., Saenger, K. L., Chu, J. O., Meyerson, B. S.

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On the origin of spatial nonuniformities in the composition of pulsed-laser-deposited films von Saenger, K. L.

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Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures von Ismail, K, LeGoues, FK, Saenger, KL, Arafa, M, Chu, JO, Mooney, PM, Meyerson, BS

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Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping von Koester, S.J., Saenger, K.L., Chu, J.O., Ouyang, Q.C., Ott, J.A., Canaperi, D.F., Tornello, J.A., Jahnes, C.V.

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Thermal stability and oxygen-loss characteristics of Pt(O) films prepared by reactive sputtering von Saenger, K. L., Cabral, C., Lavoie, C., Rossnagel, S. M.

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Submicrometer platinum electrodes by through-mask plating von SAENGER, K. L, COSTRINI, G, KOTECKI, D. E, KWIETNIAK, K. T, ANDRICACOS, P. C

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An examination of facet formation during solid phase epitaxy of line-shaped amorphized regions in (001) and (011) Si von Saenger, K. L., Fogel, K. E., Ott, J. A., Sadana, D. K., Yin, H.

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Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias von KOESTER, S. J, SAENGER, K. L, CHU, J. O, OUYANG, Q. C, OTT, J. A, JENKINS, K. A, CANAPERI, D. F, TORNELLO, J. A, JAHNES, C. V, STEEN, S. E

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A study of trench-edge defect formation in (001) and (011) silicon recrystallized by solid phase epitaxy von Saenger, K. L., de Souza, J. P., Fogel, K. E., Ott, J. A., Sung, C. Y., Sadana, D. K., Yin, H.

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Studies of atomic oxygen in O2+CF4 rf discharges by two-photon laser-induced fluorescence and optical emission spectroscopy von WALKUP, R. E, SAENGER, K. L, SELWYN, G. S

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Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0.7Sr0.3TiO3 thin film capacitors von BANIECKI, J. D, LAIBOWITZ, R. B, SHAW, T. M, SAENGER, K. L, DUNCOMBE, P. R, CABRAL, C, KOTECKI, D. E, SHEN, H, LIAN, J, MA, Q. Y

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Mask-edge defects in hybrid orientation direct-Si-bonded substrates recrystallized by solid phase epitaxy after patterned amorphization von Saenger, K. L., Fogel, K. E., Ott, J. A., Sung, C. Y., Sadana, D. K., Yin, H.

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In   situ x-ray diffraction analysis of the C49–C54 titanium silicide phase transformation in narrow lines von Roy, R. A., Clevenger, L. A., Cabral, C., Saenger, K. L., Brauer, S., Jordan-Sweet, J., Bucchignano, J., Stephenson, G. B., Morales, G., Ludwig, K. F.

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New techniques for diffusion studies of thin polymer films von TONG, H. M, SAENGER, K. L

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Mixed Orientation Si–Si Interfaces by Hydrophilic Bonding and High Temperature Oxide Dissolution von Saenger, K. L., de Souza, J. P., Fogel, K., Ott, J. A., Reznicek, A., Yin, H., Sung, C. Y., Sadana, D. K.

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Pulsed laser deposition of diamond-like carbon films von PAPPAS, D. L, SAENGER, K. L, BRULEY, J, KRAKOW, W, CUOMO, J. J, GU, T, COLLINS, R. W

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A kinetic study of the C49 to C54 TiSi2 conversion using electrical resistivity measurements on single narrow lines von Saenger, K. L., Cabral, C., Clevenger, L. A., Roy, R. A., Wind, S.

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Lowering the formation temperature of the C54-TiSi2 phase using a metallic interfacial layer von Cabral, C., Clevenger, L. A., Harper, J. M. E., d'Heurle, F. M., Roy, R. A., Saenger, K. L., Miles, G. L., Mann, R. W.

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