Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD von Smith, M. D., Taylor, E., Sadler, T. C., Zubialevich, V. Z., Lorenz, K., Li, H. N., O'Connell, J., Alves, E., Holmes, J. D., Martin, R. W., Parbrook, P. J.

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The Use of Spatial Analysis Techniques in Defect and Nanostructure Studies von Moram, M.A., Gabbai, U.E., Sadler, T.C., Kappers, M.J., Oliver, R.A.

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Dislocation movement in GaN films von Moram, M. A., Sadler, T. C., Häberlen, M., Kappers, M. J., Humphreys, C. J.

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Structural and optical properties of Ga auto-incorporated InAlN epilayers von Taylor, E., Smith, M.D., Sadler, T.C., Lorenz, K., Li, H.N., Alves, E., Parbrook, P.J., Martin, R.W.

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Validity of Vegard's rule for Al1−xInxN (0.08  <  x  <  0.28) thin films grown on GaN templates von Magalhães, S, Franco, N, Watson, I M, Martin, R W, O'Donnell, K P, Schenk, H P D, Tang, F, Sadler, T C, Kappers, M J, Oliver, R A, Monteiro, T, Martin, T L, Bagot, P A J, Moody, M P, Alves, E, Lorenz, K

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Carrier density dependence of plasmon-enhanced nonradiative energy transfer in a hybrid quantum well-quantum dot structure von Higgins, L J, Karanikolas, V D, Marocico, C A, Bell, A P, Sadler, T C, Parbrook, P J, Bradley, A L

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The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1―xN epitaxial layers von SADLER, T. C, KAPPERS, M. J, OLIVER, R. A

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Investigation of optimum growth conditions of InAlN for application in distributed Bragg reflectors von Sadler, T C, Kappers, M J, Oliver, R A

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Microstructural characterisation of a prototype layer structure for a GaN-based photonic crystal cavity von El-Ella, H W A R, Sadler, T C, Kappers, M J, Oliver, R A

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Validity of Vegard’s rule for Al 1− x In x N (0.08  <   x   <  0.28) thin films grown on GaN templates von Magalhães, S, Franco, N, Watson, I M, Martin, R W, O’Donnell, K P, Schenk, H P D, Tang, F, Sadler, T C, Kappers, M J, Oliver, R A, Monteiro, T, Martin, T L, Bagot, P A J, Moody, M P, Alves, E, Lorenz, K

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Structural and optical properties of Ga auto-incorporated InAIN epilayers von TAYLOR, E, SMITH, M. D, SADLER, T. C, LORENZ, K, LI, H. N, ALVES, E, PARBROOK, P. J, MARTIN, R. W

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The effect of annealing on the surface morphology of strained and unstrained InxAl1−xN thin films von Brice, H.R., Sadler, T.C., Kappers, M.J., Oliver, R.A.

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Crystal defect topography of Stranski-Krastanow quantum dots by atomic force microscopy von Gradkowski, K., Sadler, T. C., Mereni, L. O., Dimastrodonato, V., Parbrook, P. J., Huyet, G., Pelucchi, E.

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The effect of temperature and ammonia flux on the surface morphology and composition of In@@i@@dx@@Al@@d1-@@@i@@dx@@N epitaxial layers von Sadler, T C, Kappers, M J, Oliver, R A

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The effect of annealing on the surface morphology of strained and unstrained In sub()xl sub(1-)x thin films von Brice, H R, Sadler, T C, Kappers, MJ, Oliver, R A

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The effect of annealing on the surface morphology of strained and unstrained InxA11-xN thin films von BRICE, H. R, SADLER, T. C, KAPPERS, M. J, OLIVER, R. A

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Preparation of Substrates Intended for the Growth of Lower Threading Dislocation Densities within Nitride Based UV Multiple Quantum Wells von Conroy, Michele Ann, Petkov, Nikolay, Li, Haoning N, Sadler, Thomas C, Zubialevich, Vitaly, Holmes, Justin D., Parbrook, Peter J

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Properties of SN Ia progenitors from light curves and spectra von Höflich, P., Dragulin, P., Mitchell, J., Penney, B., Sadler, B., Diamond, T., Gerardy, C.

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Validity of Vegard’s rule for Al$_{1−x}$In$_x$N (0.08 < $x$ < 0.28) thin films grown on GaN templates von Magalhães, S, Franco, N, Watson, IM, Martin, RW, O'Donnell, KP, Schenk, HPD, Tang, F, Sadler, TC, Kappers, MJ, Oliver, RA, Monteiro, T, Martin, TL, Bagot, PAJ, Moody, MP, Alves, E, Lorenz, K

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Levonorgestrel Intrauterine System versus Medical Therapy for Menorrhagia von Gupta, Janesh, Kai, Joe, Middleton, Lee, Pattison, Helen, Gray, Richard, Daniels, Jane

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