Probing Charge Transfer at Surfaces Using Graphene Transistors von Levesque, Pierre L, Sabri, Shadi S, Aguirre, Carla M, Guillemette, Jonathan, Siaj, Mohamed, Desjardins, Patrick, Szkopek, Thomas, Martel, Richard

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Chemical vapor deposition synthesis of graphene on copper with methanol, ethanol, and propanol precursors von Guermoune, Abdeladim, Chari, Tarun, Popescu, Filip, Sabri, Shadi S., Guillemette, Jonathan, Skulason, Helgi S., Szkopek, Thomas, Siaj, Mohamed

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Enhancing gas induced charge doping in graphene field effect transistors by non-covalent functionalization with polyethyleneimine von Sabri, Shadi S., Guillemette, Jonathan, Guermoune, Abdelaadim, Siaj, Mohamed, Szkopek, Thomas

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Probing Electrochemical Charge Transfer at Surfaces Using Graphene Transistors von Levesque, Pierre L., Sabri, Shadi S., Aguirre, Carla M., Guillemette, Jonathan, Siaj, Mohamed, Desjardins, Patrick, Szkopek, Thomas, Martel, Richard

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The adoption of an e-learning system using information systems success model: a case study of Jazan University von Al-Shargabi, Bassam, Sabri, Omar, Aljawarneh, Shadi

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Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices von Mackenzie, Andrew, Allen, Scott, Hull, Brett, Palmour, John W., Lichtenwalner, Daniel J., Gajewski, Donald A., Leonard, Robert, Sabri, Shadi, van Brunt, Edward, Burk, Albert

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The path towards universal health coverage in the Arab uprising countries Tunisia, Egypt, Libya, and Yemen von Saleh, Shadi S, Dr, Alameddine, Mohamad S, PhD, Natafgi, Nabil M, MPH, Mataria, Awad, PhD, Sabri, Belgacem, MD, Nasher, Jamal, MD MSc, Zeiton, Moez, MRCS, Ahmad, Shaimaa, MBA, Siddiqi, Sameen, MD

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Short-Circuit Degradation of 10-kV 10-A SiC MOSFET von Eni, Emanuel-Petre, Beczkowski, Szymon, Munk-Nielsen, Stig, Kerekes, Tamas, Teodorescu, Remus, Juluri, Raghavendra Rao, Julsgaard, Brian, VanBrunt, Edward, Hull, Brett, Sabri, Shadi, Grider, David, Uhrenfeldt, Christian

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Large area graphene ion sensitive field effect transistors with tantalum pentoxide sensing layers for pH measurement at the Nernstian limit von Fakih, Ibrahim, Sabri, Shadi, Mahvash, Farzaneh, Nannini, Matthieu, Siaj, Mohamed, Szkopek, Thomas

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Improvements to the Analytical Model to Describe UIS Events von Steinmann, Philipp, Ganguly, Satyaki, Hull, Brett, Lam, Khiem, Lichtenwalner, Daniel J., Park, Jae-Hyung, Potera, Rahul, Richmond, Jim, Ryu, Sei-Hyung, Sabri, Shadi, Van Brackle, Charles, Van Brunt, Edward, Williams, Elizabeth

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Landfill leachate treatment technology via electrocoagulation: a review of operating parameters, intensification, and modelling von Hanif, Mohamad Haziq Mohd, Kamaruddin, Mohamad Anuar, Norashiddin, Faris Aiman, Niza, Noorzalila Muhammad, Shadi, Abdubaki Mohamed Hussen, Sabri, Muhammad Najib Ikmal Mohd, Zawawi, Mohd Hafiz

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Avalanche Ruggedness Characterization of 10 kV 4H-SiC MOSFETs von Veliadis, Victor, van Brunt, Edward, Ganguly, Satyaki, Kumar, Ashish, Parashar, Sanket, Sabri, Shadi, Bhattacharya, Subhashish

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15 kV n-GTOs in 4H-SiC von Allen, Scott, Hull, Brett, Richmond, Jim, O'Brien, Heather, Jonas, Charlotte, Ryu, Sei Hyung, Burk, Albert A., Casady, Jeff, Grider, David, Capell, Craig, Lemma, Yemane, Palmour, John W., McCain, Matthew, O’Loughlin, Michael, Sabri, Shadi, van Brunt, Edward, Ogunniyi, Aderinto, Lelis, Aivars J., Lichtenwalner, Daniel J.

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Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers von Ganguly, Satyaki, Palmour, John W., Sabri, Shadi, van Brunt, Edward, Gajewski, Donald A., Allen, Scott, Hull, Brett, Lichtenwalner, Daniel J.

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SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHOD von SABRI, Shadi

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SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHOD von Sabri, Shadi

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Accelerated Testing of SiC Power Devices under High-Field Operating Conditions von Park, Jae Hyung, Ganguly, Satyaki, Allen, Scott, Hull, Brett, Richmond, Jim, Palmour, John W., Steinmann, Philipp, Ryu, Sei Hyung, Romero, Amy, Sabri, Shadi, van Brunt, Edward, Gajewski, Donald A., Lichtenwalner, Daniel J.

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POWER SEMICONDUCTOR DEVICES HAVING REFLOWED INTER-METAL DIELECTRIC LAYERS von LICHTENWALNER DANIEL J, SABRI SHADI, VAN BRUNT EDWARD R

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Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes von Zhang, Qing Chun, Allen, Scott, Hull, Brett, Richmond, Jim, Lichtenwalner, Daniel J., Jonas, Charlotte, Ryu, Sei Hyung, O'Brien, Heather, Casady, Jeff, Grider, David, O'Loughlin, Michael, Capell, Craig, Lemma, Yemane, Palmour, John W., McCain, Matthew, Sabri, Shadi, van Brunt, Edward, Burk, Albert, Ogunniyi, Aderinto, Lelis, Aivars J.

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Static and Dynamic Characterization of a 3.3 Kv, 45 A 4H-Sic MOSFET von Sabri, Shadi, Hull, Brett, Baliga, B. Jayant, Bhattacharya, Subhashish, Grider, David, Anurag, Anup, Vechalapu, Kasunaidu, Acharya, Sayan, Han, Ki Jeong, van Brunt, Edward, Gohil, Ghanshyamsinh

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