Gilbert damping of high anisotropy Co/Pt multilayers von Devolder, Thibaut, Couet, S, Swerts, J, Kar, G S

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Epitaxial growth of magnetron sputtered NiAl on Ge mediated by native GeOx von Ben Chroud, M, Korytov, M, Soulié, J-P, Adelmann, C, Swerts, J, Temst, K, Carpenter, R

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Impact of Ta and W-based spacers in double MgO STT-MRAM free layers on perpendicular anisotropy and damping von Couet, S., Devolder, T., Swerts, J., Mertens, S., Lin, T., Liu, E., Van Elshocht, S., Sankar Kar, G.

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MgGa2O4 as alternative barrier for perpendicular MRAM junctions and VCMA von Mertens, S., Couet, S., Carpenter, R., Swerts, J., Crotti, D., Kar, G. Sankar

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Evolution of perpendicular magnetized tunnel junctions upon annealing von Devolder, Thibaut, Couet, S., Swerts, J., Furnemont, A.

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Material Developments and Domain Wall-Based Nanosecond-Scale Switching Process in Perpendicularly Magnetized STT-MRAM Cells von Devolder, Thibaut, Joo-Von Kim, Swerts, J., Couet, S., Rao, S., Kim, W., Mertens, S., Kar, G., Nikitin, V.

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Publisher's Note: “MgGa2O4 as alternative barrier for perpendicular MRAM junctions and VCMA” [Appl. Phys. Lett. 118, 172402 (2021)] von Mertens, S., Couet, S., Carpenter, R., Swerts, J., Crotti, D., Sankar Kar, G.

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Time-resolved spin-torque switching in MgO-based perpendicularly magnetized tunnel junctions von Devolder, T., Kim, Joo-Von, Garcia-Sanchez, F., Swerts, J., Kim, W., Couet, S., Kar, G., Furnemont, A.

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Offset fields in perpendicularly magnetized tunnel junctions von Devolder, T, Carpenter, R, Rao, S, Kim, W, Couet, S, Swerts, J, Kar, G S

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High- k dielectrics for future generation memory devices (Invited Paper) von Kittl, J.A., Opsomer, K., Popovici, M., Menou, N., Kaczer, B., Wang, X.P., Adelmann, C., Pawlak, M.A., Tomida, K., Rothschild, A., Govoreanu, B., Degraeve, R., Schaekers, M., Zahid, M., Delabie, A., Meersschaut, J., Polspoel, W., Clima, S., Pourtois, G., Knaepen, W., Detavernier, C., Afanas’ev, V.V., Blomberg, T., Pierreux, D., Swerts, J., Fischer, P., Maes, J.W., Manger, D., Vandervorst, W., Conard, T., Franquet, A., Favia, P., Bender, H., Brijs, B., Van Elshocht, S., Jurczak, M., Van Houdt, J., Wouters, D.J.

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[Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications von Liu, E., Swerts, J., Couet, S., Mertens, S., Tomczak, Y., Lin, T., Spampinato, V., Franquet, A., Van Elshocht, S., Kar, G., Furnemont, A., De Boeck, J.

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BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap von Swerts, J., Mertens, S., Lin, T., Couet, S., Tomczak, Y., Sankaran, K., Pourtois, G., Kim, W., Meersschaut, J., Souriau, L., Radisic, D., Van Elshocht, S., Kar, G., Furnemont, A.

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Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory von Popovici, M., Swerts, J., Redolfi, A., Kaczer, B., Aoulaiche, M., Radu, I., Clima, S., Everaert, J.-L., Van Elshocht, S., Jurczak, M.

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Emotional Tears Facilitate the Recognition of Sadness and the Perceived Need for Social Support von Balsters, Martijn J. H., Krahmer, Emiel J., Swerts, Marc G. J., Vingerhoets, Ad J. J. M.

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Annealing stability of magnetic tunnel junctions based on dual MgO free layers and [Co/Ni] based thin synthetic antiferromagnet fixed system von Devolder, T., Couet, S., Swerts, J., Liu, E., Lin, T., Mertens, S., Furnemont, A., Kar, G.

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Low-loss α-tantalum coplanar waveguide resonators on silicon wafers: fabrication, characterization and surface modification von Lozano, D P, Mongillo, M, Piao, X, Couet, S, Wan, D, Canvel, Y, Vadiraj, A M, Ivanov, Ts, Verjauw, J, Acharya, R, Van Damme, J, Mohiyaddin, F A, Jussot, J, Gowda, P P, Pacco, A, Raes, B, Van de Vondel, J, Radu, I P, Govoreanu, B, Swerts, J, Potočnik, A, De Greve, K

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Smile Mimicry and Emotional Contagion in Audio-Visual Computer-Mediated Communication von Mui, Phoebe H C, Goudbeek, Martijn B, Roex, Camiel, Spierts, Wout, Swerts, Marc G J

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Seed layer impact on structural and magnetic properties of [Co/Ni] multilayers with perpendicular magnetic anisotropy von Liu, Enlong, Swerts, J., Devolder, T., Couet, S., Mertens, S., Lin, T., Spampinato, V., Franquet, A., Conard, T., Van Elshocht, S., Furnemont, A., De Boeck, J., Kar, G.

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Ferromagnetic resonance study of composite Co/Ni - FeCoB free layers with perpendicular anisotropy von Devolder, T., Liu, E., Swerts, J., Couet, S., Lin, T., Mertens, S., Furnemont, A., Kar, G., De Boeck, J.

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Impact of operating temperature on the electrical and magnetic properties of the bottom-pinned perpendicular magnetic tunnel junctions von Wu, Y. C., Kim, W., Rao, S., Garello, K., Van Beek, S., Couet, S., Liu, E., Swerts, J., Kundu, S., Souriau, L., Yasin, F., Crotti, D., Jochum, J. K., Van Bael, M. J., Van Houdt, J., Groeseneken, G., Kar, G. S.

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