Formation of threading defects in GaN wurtzite films grown on nonisomorphic substrates von Sverdlov, B. N., Martin, G. A., Morkoç, H., Smith, David J.

Volltext

Mechanisms of band-edge emission in Mg-doped p -type GaN von Smith, M., Chen, G. D., Lin, J. Y., Jiang, H. X., Salvador, A., Sverdlov, B. N., Botchkarev, A., Morkoc, H., Goldenberg, B.

Volltext

Thermal stability of GaN investigated by low-temperature photoluminescence spectroscopy von LIN, M. E, SVERDLOV, B. N, MORKOC, H

Volltext

Growth and characterization of GaN on c-plane (0001) sapphire substrates by plasma-enhanced molecular beam epitaxy von LIN, M. E, SVERDLOV, B. N, MORKOC, H

Volltext

Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy von Smith, M., Chen, G. D., Lin, J. Y., Jiang, H. X., Salvador, A., Sverdlov, B. N., Botchkarev, A., Morkoç, H.

Volltext

Stacking mismatch boundaries in GaN: Implications for substrate selection von Smith, D.J., Tsen, S.-C.Y., Sverdlov, B.N., Martin, G., Morkoç, H.

Volltext

Photoluminescence studies of band-edge transitions in GaN epitaxial layers grown by plasma-assisted molecular beam epitaxy von Chen, G. D., Smith, M., Lin, J. Y., Jiang, H. X., Salvador, A., Sverdlov, B. N., Botchkarv, A., Morkoc, H.

Volltext

InGaSbAs injection lasers von Drakin, A., Eliseev, P., Sverdlov, B., Bochkarev, A., Dolginov, L., Druzhinina, L.

Volltext

Anomalous interaction of spectral modes in a semiconductor laser von Bogatov, A., Eliseev, P., Sverdlov, B.

Volltext

Photoluminescence of zinc-blende GaN under hydrostatic pressure von Hwang, S. J., Shan, W., Hauenstein, R. J., Song, J. J., Lin, M.-E., Strite, S., Sverdlov, B. N., Morkoç, H.

Volltext

CW InGaAsP/InP injection lasers with very low threshold current density at room temperature von Dolginov, L., Drakin, A., Eliseev, P., Sverdlov, B., Shevchenko, E.

Volltext

Thermal resistivity of quaternary solid solutions InGaAsSb and GaAlAsSb lattice-matched to GaSb von Both, W., Bochkarev, A. E., Drakin, A. E., Sverdlov, B. N.

Volltext

Multicomponent solid-solution semiconductor lasers von Dolginov, L., Druzhinina, L., Eliseev, P., Kryukova, I., Leskovich, V., Milvidskii, M., Sverdlov, B., Shevchenko, E.

Volltext

Water-content indicator for liquefied hydrocarbon gases von Dolginov, L. M., Dyatlov, V. N., Pochter, V. M., Sverdlov, B. N., Bochkarev, A. .

Volltext

Injection lasers based on AlGaAsSb/GaSb and InGaAsSb/GaSb heterostructures von Dolginov, M. L., Drakin, A. E., Druzhinina, L. V., Eliseev, P. G., Mil'vidskii, M. G., Sverdlov, B. N., Skripkin, V. A.

Volltext

Anomalous interaction of spectral modes in a semiconductor laser von Bogatov, Alexandr P, Eliseev, P G, Sverdlov, B N

Volltext

Injection laser with a diffraction grating in its resonator von Akkerman, D, Bogatov, Alexandr P, Eliseev, P G, Raab, Z, Sverdlov, B N

Volltext

Temperature dependences of the emission characteristics of GaInPAs/InP injection lasers von Dolginov, L M, Duraev, V P, Eliseev, P G, Nedelin, E T, Sverdlov, B N, Shveĭkin, V I, Shevchenko, E G

Volltext

Injection heterolaser based on InGaAsSb four-component solid solution von Dolginov, L M, Druzhinina, L V, Eliseev, P G, Lapshin, A N, Mil'vidskiĭ, M G, Sverdlov, B N

Volltext

Epitaxial AlGaAsSbGaSb (AlGaSb) heterostructures for injection lasers von Aarik, J. A., Dolginov, L. M., Druzhinina, L. V., Eliseev, P. G., Lǒuk, P. A., Milvidskij, M. G., Sverdlov, B. N., Friedenthal, J. K.

Volltext