Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies von Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., Burns, M.

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Time-resolved Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN von Tsen, K. T., Ferry, D. K., Botchkarev, A., Sverdlov, B., Salvador, A., Morkoc, H.

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Formation of threading defects in GaN wurtzite films grown on nonisomorphic substrates von Sverdlov, B. N., Martin, G. A., Morkoç, H., Smith, David J.

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Mechanisms of band-edge emission in Mg-doped p -type GaN von Smith, M., Chen, G. D., Lin, J. Y., Jiang, H. X., Salvador, A., Sverdlov, B. N., Botchkarev, A., Morkoc, H., Goldenberg, B.

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A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma-assisted molecular-beam epitaxy von LIN, M. E, SVERDLOV, B, ZHOU, G. L, MORKOC, H

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Direct measurements of electron-longitudinal optical phonon scattering rates in wurtzite GaN von Tsen, K. T., Ferry, D. K., Botchkarev, A., Sverdlov, B., Salvador, A., Morkoç, H.

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Characterization of structural defects in wurtzite GaN grown on 6H SiC using plasma-enhanced molecular beam epitaxy von Smith, David J., Chandrasekhar, D., Sverdlov, B., Botchkarev, A., Salvador, A., Morkoç, H.

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Nonequilibrium electron distributions and phonon dynamics in wurtzite GaN von Tsen, K. T., Joshi, R. P., Ferry, D. K., Botchkarev, A., Sverdlov, B., Salvador, A., Morkoç, H.

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Thermal stability of GaN investigated by low-temperature photoluminescence spectroscopy von LIN, M. E, SVERDLOV, B. N, MORKOC, H

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Spectral measurements of dielectric characteristics of petroleum and petroleum oils in the millimeter wave range von Furashov, N. I., Dudin, V. E., Sverdlov, B. A.

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Growth and characterization of GaN on c-plane (0001) sapphire substrates by plasma-enhanced molecular beam epitaxy von LIN, M. E, SVERDLOV, B. N, MORKOC, H

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Study of the dielectric properties of water in the frequency range 75–120 GHz von Furashov, N I, Dudin, V E, Sverdlov, B A

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Structural properties of GaN films grown on sapphire by molecular beam epitaxy von Zhu, Q., Botchkarev, A., Kim, W., Aktas, Ö., Salvador, A., Sverdlov, B., Morkoç, H., Tsen, S.-C. Y., Smith, David J.

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Strained layer heterostructures, and their applications to MODFETs, HBTs, and lasers von Morkoc, H., Sverdlov, B., Gao, G.-B.

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GaN based III–V nitrides by molecular beam epitaxy von Morkoç, H., Botchkarev, A., Salvador, A., Sverdlov, B.

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Electron–phonon interactions in the wide band-gap semiconductor GaN von Sheih, S. J., Tsen, K. T., Ferry, D. K., Botchkarev, A., Sverdlov, B., Salvador, A., Morkoç, H.

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Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy von Smith, M., Chen, G. D., Lin, J. Y., Jiang, H. X., Salvador, A., Sverdlov, B. N., Botchkarev, A., Morkoç, H.

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Photoluminescence studies of band-edge transitions in GaN epitaxial layers grown by plasma-assisted molecular beam epitaxy von Chen, G. D., Smith, M., Lin, J. Y., Jiang, H. X., Salvador, A., Sverdlov, B. N., Botchkarv, A., Morkoc, H.

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InGaSbAs injection lasers von Drakin, A., Eliseev, P., Sverdlov, B., Bochkarev, A., Dolginov, L., Druzhinina, L.

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Stacking mismatch boundaries in GaN: Implications for substrate selection von Smith, D.J., Tsen, S.-C.Y., Sverdlov, B.N., Martin, G., Morkoç, H.

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