Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO von Kim, Junyeon, Sinha, Jaivardhan, Hayashi, Masamitsu, Yamanouchi, Michihiko, Fukami, Shunsuke, Suzuki, Tetsuhiro, Mitani, Seiji, Ohno, Hideo

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Domain Wall Motion Induced by Electric Current in a Perpendicularly Magnetized Co/Ni Nano-Wire von Tanigawa, Hironobu, Koyama, Tomohiro, Yamada, Gen, Chiba, Daichi, Kasai, Shinya, Fukami, Shunsuke, Suzuki, Tetsuhiro, Ohshima, Norikazu, Ishiwata, Nobuyuki, Nakatani, Yoshinobu, Ono, Teruo

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Transition in mechanism for current-driven magnetic domain wall dynamics von Ueda, Kohei, Kim, Kab-Jin, Yoshimura, Yoko, Hiramatsu, Ryo, Moriyama, Takahiro, Chiba, Daichi, Tanigawa, Hironobu, Suzuki, Tetsuhiro, Kariyada, Eiji, Ono, Teruo

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Tradeoff between low-power operation and thermal stability in magnetic domain-wall-motion devices driven by spin Hall torque von Kim, Kab-Jin, Hiramatsu, Ryo, Moriyama, Takahiro, Tanigawa, Hironobu, Suzuki, Tetsuhiro, Kariyada, Eiji, Ono, Teruo

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Different stochastic behaviors for magnetic field and current in domain wall creep motion von Taniguchi, Takuya, Kim, Kab-Jin, Yoshimura, Yoko, Moriyama, Takahiro, Tanigawa, Hironobu, Suzuki, Tetsuhiro, Kariyada, Eiji, Ono, Teruo

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Effect of Inserting a Pt Layer into a Perpendicularly Magnetized Co/Ni Multilayered Film in Terms of Current-Induced Domain Wall Motion von Tanigawa, Hironobu, Ohshima, Norikazu, Suzuki, Tetsuhiro, Suemitsu, Katsumi, Kariyada, Eiji

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Magnetic configuration of submicron-sized magnetic patterns in domain wall motion memory von Ohshima, Norikazu, Numata, Hideaki, Fukami, Shunsuke, Nagahara, Kiyokazu, Suzuki, Tetsuhiro, Ishiwata, Nobuyuki, Fukumoto, Keiki, Kinoshita, Toyohiko, Ono, Teruo

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Current-Induced Magnetic Domain Wall Motion in Co/Ni Nanowire at Low Temperature von Ueda, Kohei, Koyama, Tomohiro, Chiba, Daichi, Shimamura, Kazutoshi, Tanigawa, Hironobu, Fukami, Shunsuke, Suzuki, Tetsuhiro, Ohshima, Norikazu, Ishiwata, Nobuyuki, Nakatani, Yoshinobu, Ono, Teruo

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Control of Multiple Magnetic Domain Walls by Current in a Co/Ni Nano-Wire von Chiba, Daichi, Yamada, Gen, Koyama, Tomohiro, Ueda, Kohei, Tanigawa, Hironobu, Fukami, Shunsuke, Suzuki, Tetsuhiro, Ohshima, Norikazu, Ishiwata, Nobuyuki, Nakatani, Yoshinobu, Ono, Teruo

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Current-Induced Magnetic Domain Wall Motion in a Co/Ni Nanowire with Structural Inversion Asymmetry von Koyama, Tomohiro, Hata, Hiroshi, Kim, Kab-Jin, Moriyama, Takahiro, Tanigawa, Hironobu, Suzuki, Tetsuhiro, Nakatani, Yoshinobu, Chiba, Daichi, Ono, Teruo

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Low writing field with large writing margin in toggle magnetic random access memories using synthetic antiferromagnet ferromagnetically coupled with soft magnetic layers von Fukumoto, Yoshiyuki, Suzuki, Tetsuhiro, Tahara, Shuichi

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Wire Width Dependence of Threshold Current Density for Domain Wall Motion in Co/Ni Nanowires von Koyama, Tomohiro, Ono, Teruo, Chiba, Daichi, Ueda, Kohei, Tanigawa, Hironobu, Fukami, Shunsuke, Suzuki, Tetsuhiro, Ohshima, Norikazu, Ishiwata, Nobuyuki, Nakatani, Yoshinobu

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Effect of Device Temperature on Domain Wall Motion in a Perpendicularly Magnetized Co/Ni Wire von Tanigawa, Hironobu, Suemitsu, Katsumi, Fukami, Shunsuke, Ohshima, Norikazu, Suzuki, Tetsuhiro, Kariyada, Eiji, Ishiwata, Nobuyuki

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Operating principle of a three-terminal domain wall device with perpendicularly magnetized Ta/CoFeB/MgO free layer and underlying hard magnets von Tanigawa, Hironobu, Suzuki, Tetsuhiro, Suemitsu, Katsumi, Ohshima, Norikazu, Kitamura, Takuya, Ohkochi, Takuo, Kotsugi, Masato, Kinoshita, Toyohiko, Koyama, Tomohiro, Chiba, Daichi, Yoshimura, Yoko, Ueda, Kohei, Ono, Teruo, Kariyada, Eiji

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Intrinsic Threshold Current Density of Domain Wall Motion in Nanostrips With Perpendicular Magnetic Anisotropy for Use in Low-Write-Current MRAMs von Fukami, S., Suzuki, T., Ohshima, N., Nagahara, K., Ishiwata, N.

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Toggle magnetic random access memory cells scalable to a capacityof over 100 megabits von Fukumoto, Yoshiyuki, Nebashi, Ryusuke, Mukai, Tomonori, Tsuji, Kiyotaka, Suzuki, Tetsuhiro

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Semiconductor package von Suzuki, Tetsuhiro

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Magnetic shield, semiconductor device, and semiconductor package von Suzuki Tetsuhiro

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Analysis of MTJ Edge Deformation Influence on Switching Current Distribution for Next-Generation High-Speed MRAMs von Katoh, Y., Saito, S., Honjo, H., Nebashi, R., Sakimura, N., Suzuki, T., Miura, S., Sugibayashi, T.

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Magnetic memory using spin orbit interaction von Suzuki Tetsuhiro

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