Parallel Peak Cancellation Signal-Based PAPR Reduction Method Using Null Space in MIMO Channel for MIMO-OFDM Transmission von SUZUKI, Taku, SUZUKI, Mikihito, HIGUCHI, Kenichi

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Complexity-Reduced Adaptive PAPR Reduction Method Using Null Space in MIMO Channel for MIMO-OFDM Signals von SUZUKI, Taku, SUZUKI, Mikihito, KISHIYAMA, Yoshihisa, HIGUCHI, Kenichi

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Below-bandgap photoluminescence from GaAs substrates induced by pre-MBE-growth treatments von Roca, Ronel Christian, Fukui, Kosei, Mizuno, Hiroto, Suzuki, Mikihito, Kamiya, Itaru

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Parallel Peak Cancellation Signal-Based PAPR Reduction Method Using Null Space in MIMO Channel for MIMO-OFDM Transmission von SUZUKI, Taku, SUZUKI, Mikihito, HIGUCHI, Kenichi

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Below‐Bandgap Photoluminescence from GaAs von Roca, Ronel Christian, Fukui, Kosei, Mizuno, Hiroto, Suzuki, Mikihito, Kamiya, Itaru

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Complexity-Reduced Adaptive PAPR Reduction Method Using Null Space in MIMO Channel for MIMO-OFDM Signals von SUZUKI, Taku, SUZUKI, Mikihito, KISHIYAMA, Yoshihisa, HIGUCHI, Kenichi

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Photoluminescence of pre-growth treatment induced below-bandgap states in GaAs von Roca, Ronel Christian, Fukui, Kosei, Mizuno, Hiroto, Suzuki, Mikihito, Kamiya, Itaru

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Below-Bandgap Photoluminescence Emission from SI GaAs substrates subjected to pre-MBE-growth annealing von Roca, Ronel Intal, Mizuno, Hiroto, Suzuki, Mikihito, Kamiya, Itaru

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Optical property control of strain-engineered stacked InAs quantum dots by modulated interlayers von Suzuki, Mikihito, Shimomura, Kenichi, Kamiya, Itaru

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Morphology change of strain-engineered stacked InAs quantum dots with modulated interlayers von Suzuki, Mikihito, Shimomura, Kenichi, Kamiya, Itaru

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Photoluminescence of strain-engineered stacked InAs quantum dots von Suzuki, Mikihito, Shimomura, Kenichi, Kamiya, Itaru

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WAFER HOUSING CONTAINER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE von NAKAMURA, Shotaro, SUZUKI, Mikihito, UENO, Ryuji

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SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE von SUZUKI, Mikihito, UENO, Ryuji, MIYOSHI, Keisuke, MAEKAWA, Yuki

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POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING POWER SEMICONDUCTOR DEVICE von TANAKA, Koji, TAKEDA, Naoyuki, SUZUKI, Mikihito, NAKAMURA, Katsumi

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Wafer-Aufnahmebehälter und Verfahren zur Herstellung einer Halbleitervorrichtung von Ueno, Ryuji, Nakamura, Shotaro, Suzuki, Mikihito

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SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT von FUJISAKI Atsushi, SUZUKI Mikihito, ODAHARA Masashi, OGATA Sumito

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Halbleitervorrichtung, Leistungsumwandlungsvorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung von Ueno, Ryuji, Miyoshi, Keisuke, Maekawa, Yuki, Suzuki, Mikihito

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Leistungshalbleitervorrichtung und Verfahren zur Fertigung der Leistungshalbleitervorrichtung von Nakamura, Katsumi, Takeda, Naoyuki, Tanaka, Koji, Suzuki, Mikihito

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変調中間層による歪制御積層InAs量子ドットの光学特性制御 von 鈴木, 幹人, 下村, 憲一, 神谷, 格

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変調中間層による歪制御積層 InAs 量子ドット形状の変化 von 鈴木, 幹人, 下村, 憲一, 神谷, 格

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