A lightweight shape-memory magnesium alloy von Ogawa, Yukiko, Ando, Daisuke, Sutou, Yuji, Koike, Junichi

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NiAl as a potential material for liner- and barrier-free interconnect in ultrasmall technology node von Chen, Linghan, Ando, Daisuke, Sutou, Yuji, Gall, Daniel, Koike, Junichi

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Reversible displacive transformation in MnTe polymorphic semiconductor von Mori, Shunsuke, Hatayama, Shogo, Shuang, Yi, Ando, Daisuke, Sutou, Yuji

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Photoinduced Nonvolatile Displacive Transformation and Optical Switching in MnTe Semiconductors von Mori, Shunsuke, Tanimura, Hiroshi, Ichitsubo, Tetsu, Sutou, Yuji

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CuAl2 thin films as a low-resistivity interconnect material for advanced semiconductor devices von Chen, Linghan, Ando, Daisuke, Sutou, Yuji, Koike, Junichi

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Heat-resistant aluminum alloy design using explainable machine learning von Huang, Jinxian, Ando, Daisuke, Sutou, Yuji

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Interdiffusion reliability and resistivity scaling of intermetallic compounds as advanced interconnect materials von Chen, Linghan, Kumar, Sushant, Yahagi, Masataka, Ando, Daisuke, Sutou, Yuji, Gall, Daniel, Sundararaman, Ravishankar, Koike, Junichi

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Design strategy of phase change material properties for low-energy memory application von Yamamoto, Takuya, Hatayama, Shogo, Sutou, Yuji

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Abnormal Grain Growth Induced by Cyclic Heat Treatment von Omori, Toshihiro, Kusama, Tomoe, Kawata, Shingo, Ohnuma, Ikuo, Sutou, Yuji, Araki, Yoshikazu, Ishida, Kiyohito, Kainuma, Ryosuke

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Effect of N dopants on the phase change characteristics of Cr2Ge2Te6 film revealed by changes in optical properties von Shuang, Yi, Hatayama, Shogo, Ando, Daisuke, Sutou, Yuji

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Dimensional transformation of chemical bonding during crystallization in a layered chalcogenide material von Saito, Yuta, Hatayama, Shogo, Shuang, Yi, Fons, Paul, Kolobov, Alexander V., Sutou, Yuji

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Direct observation of phase-change volume in contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material von Shuang, Yi, Ando, Daisuke, Song, Yunheub, Sutou, Yuji

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Liner- and barrier-free NiAl metallization: A perspective from TDDB reliability and interface status von Chen, Linghan, Ando, Daisuke, Sutou, Yuji, Yokogawa, Shinji, Koike, Junichi

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Sequential two-stage displacive transformation from β to α via β′ phase in polymorphic MnTe film von Mori, Shunsuke, Ando, Daisuke, Sutou, Yuji

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Relation between density and optical contrasts upon crystallization in Cr2Ge2Te6 phase-change material: coexistence of a positive optical contrast and a negative density contrast von Hatayama, Shogo, Ando, Daisuke, Sutou, Yuji

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The importance of contacts in Cu2GeTe3 phase change memory devices von Shindo, Satoshi, Shuang, Yi, Hatayama, Shogo, Saito, Yuta, Fons, Paul, Kolobov, Alexander V., Kobayashi, Keisuke, Sutou, Yuji

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NbTe4 Phase‐Change Material: Breaking the Phase‐Change Temperature Balance in 2D Van der Waals Transition‐Metal Binary Chalcogenide von Yi Shuang, Chen, Qian, Kim, Mihyeon, Wang, Yinli, Saito, Yuta, Hatayama, Shogo, Fons, Paul, Ando, Daisuke, Kubo, Momoji, Sutou, Yuji

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High-strength Fe–20Mn–Al–C-based Alloys with Low Density von Sutou, Yuji, Kamiya, Naohide, Umino, Reiko, Ohnuma, Ikuo, Ishida, Kiyohito

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Potential of low-resistivity Cu2Mg for highly scaled interconnects and its challenges von Chen, Linghan, Chen, Qian, Ando, Daisuke, Sutou, Yuji, Kubo, Momoji, Koike, Junichi

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Understanding the Origin of Low-Energy Operation Characteristics for Cr2Ge2Te6 Phase-Change Material: Enhancement of Thermal Efficiency in the High-Scaled Memory Device von Hatayama, Shogo, Yamamoto, Takuya, Mori, Shunsuke, Song, Yun-Heub, Sutou, Yuji

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