Molybdenum oxide-base phase change resistive switching material von Ogawa, Yukiko, Shindo, Satoshi, Sutou, Yuji, Koike, Junichi

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A lightweight shape-memory magnesium alloy von Ogawa, Yukiko, Ando, Daisuke, Sutou, Yuji, Koike, Junichi

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NiAl as a potential material for liner- and barrier-free interconnect in ultrasmall technology node von Chen, Linghan, Ando, Daisuke, Sutou, Yuji, Gall, Daniel, Koike, Junichi

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Reversible displacive transformation in MnTe polymorphic semiconductor von Mori, Shunsuke, Hatayama, Shogo, Shuang, Yi, Ando, Daisuke, Sutou, Yuji

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Photoinduced Nonvolatile Displacive Transformation and Optical Switching in MnTe Semiconductors von Mori, Shunsuke, Tanimura, Hiroshi, Ichitsubo, Tetsu, Sutou, Yuji

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CuAl2 thin films as a low-resistivity interconnect material for advanced semiconductor devices von Chen, Linghan, Ando, Daisuke, Sutou, Yuji, Koike, Junichi

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Heat-resistant aluminum alloy design using explainable machine learning von Huang, Jinxian, Ando, Daisuke, Sutou, Yuji

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Interdiffusion reliability and resistivity scaling of intermetallic compounds as advanced interconnect materials von Chen, Linghan, Kumar, Sushant, Yahagi, Masataka, Ando, Daisuke, Sutou, Yuji, Gall, Daniel, Sundararaman, Ravishankar, Koike, Junichi

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Design strategy of phase change material properties for low-energy memory application von Yamamoto, Takuya, Hatayama, Shogo, Sutou, Yuji

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Effect of N dopants on the phase change characteristics of Cr2Ge2Te6 film revealed by changes in optical properties von Shuang, Yi, Hatayama, Shogo, Ando, Daisuke, Sutou, Yuji

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Abnormal Grain Growth Induced by Cyclic Heat Treatment von Omori, Toshihiro, Kusama, Tomoe, Kawata, Shingo, Ohnuma, Ikuo, Sutou, Yuji, Araki, Yoshikazu, Ishida, Kiyohito, Kainuma, Ryosuke

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Dimensional transformation of chemical bonding during crystallization in a layered chalcogenide material von Saito, Yuta, Hatayama, Shogo, Shuang, Yi, Fons, Paul, Kolobov, Alexander V., Sutou, Yuji

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Direct observation of phase-change volume in contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material von Shuang, Yi, Ando, Daisuke, Song, Yunheub, Sutou, Yuji

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Liner- and barrier-free NiAl metallization: A perspective from TDDB reliability and interface status von Chen, Linghan, Ando, Daisuke, Sutou, Yuji, Yokogawa, Shinji, Koike, Junichi

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Sequential two-stage displacive transformation from β to α via β′ phase in polymorphic MnTe film von Mori, Shunsuke, Ando, Daisuke, Sutou, Yuji

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Relation between density and optical contrasts upon crystallization in Cr2Ge2Te6 phase-change material: coexistence of a positive optical contrast and a negative density contrast von Hatayama, Shogo, Ando, Daisuke, Sutou, Yuji

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Potential of low-resistivity Cu2Mg for highly scaled interconnects and its challenges von Chen, Linghan, Chen, Qian, Ando, Daisuke, Sutou, Yuji, Kubo, Momoji, Koike, Junichi

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High-strength Fe–20Mn–Al–C-based Alloys with Low Density von Sutou, Yuji, Kamiya, Naohide, Umino, Reiko, Ohnuma, Ikuo, Ishida, Kiyohito

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Understanding the Origin of Low-Energy Operation Characteristics for Cr2Ge2Te6 Phase-Change Material: Enhancement of Thermal Efficiency in the High-Scaled Memory Device von Hatayama, Shogo, Yamamoto, Takuya, Mori, Shunsuke, Song, Yun-Heub, Sutou, Yuji

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The importance of contacts in Cu2GeTe3 phase change memory devices von Shindo, Satoshi, Shuang, Yi, Hatayama, Shogo, Saito, Yuta, Fons, Paul, Kolobov, Alexander V., Kobayashi, Keisuke, Sutou, Yuji

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