Phase-mismatching effects in the internal second-harmonic generation in InGaAs quantum-well laser diodes von ISPASOIU, R. G, SMEU, E, PUSCAS, N. N, POPESCU, I. M, SURUCEANU, G. I

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MOVPE-grown high CW power InGaAs/InGaAsP/InGaP diode lasers von Mawst, L.J., Bhattacharya, A., Nesnidal, M., Lopez, J., Botez, D., Syrbu, A.V., Yakovlev, V.P., Suruceanu, G.I., Mereutza, A.Z., Jansen, M., Nabiev, R.F.

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Buried heterostructure AlGaAs photonic devices fabricated by low temperature mesa melt etching and regrowth von Syrbu, A.V., Mereutza, A.Z., Yakovlev, V.P., Suruceanu, G.I., Lupu, A.T.

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Internal second-harmonic generation in CW AlGaAs SQW lasers: the facet degradation monitoring von Kravetsky, I.V., Kulyuk, L.L., Lupu, A.T., Shutov, D.A., Suruceanu, G.I., Syrbu, A.V., Yakovlev, V.P.

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Letter Phase-mismatching effects in the internal second-harmonic generation in InGaAs quantum-well laser diodes von Ispasoiu, R. G., Smeu, E., Puscas, N. N., Popescu, I. M., Suruceanu, G. I.

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InAs/InP quantum dot VECSEL emitting at 1.5 μm von Nechay, K., Mereuta, A., Paranthoen, C., Brévalle, G., Levallois, C., Alouini, M., Chevalier, N., Perrin, M., Suruceanu, G., Caliman, A., Guina, M., Kapon, E.

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High-performance single-mode VCSELs in the 1310-nm waveband von Iakovlev, V., Suruceanu, G., Caliman, A., Mereuta, A., Mircea, A., Berseth, C.-A., Syrbu, A., Rudra, A., Kapon, E.

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Increasing single mode power of 1.3-μm VCSELs by output coupling optimization von Mereuta, A, Caliman, A, Sirbu, A, Iakovlev, V, Mickovic, Z, Suruceanu, G, Kapon, E

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Fabrication and performance of 1.3-μm 10-Gb/s CWDM wafer-fused VCSELs grown by MOVPE von Mereuta, A., Sirbu, A., Caliman, A., Suruceanu, G., Iakovlev, V., Mickovic, Z., Kapon, E.

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Reliability of 1310 nm Wafer Fused VCSELs von Sirbu, Alexei, Suruceanu, G., Iakovlev, V., Mereuta, A., Mickovic, Z., Caliman, A., Kapon, E.

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Performances of Microwave-Band Analog Signal Transmission Using Wafer-Fused Long Wavelength VCSELs von Belkin, M. E., Belkin, Leonid, Sigov, A. S., Iakovlev, V., Suruceanu, G., Kapon, E.

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Cavity Mode-Gain Peak Tradeoff for 1320-nm Wafer-Fused VCSELs With 3-mW Single-Mode Emission Power and 10-Gb/s Modulation Speed Up to 70 ^C von Mircea, A., Caliman, A., Iakovlev, V., Mereuta, A., Suruceanu, G., Berseth, C.-A., Royo, P., Syrbu, A., Kapon, E.

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1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs von Syrbu, A., Mircea, A., Mereuta, A., Caliman, A., Berseth, C.-A., Suruceanu, G., Iakovlev, V., Achtenhagen, M., Rudra, A., Kapon, E.

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1.55-μm optically pumped wafer-fused tunable VCSELs with 32-nm tuning range von Syrbu, A., Iakovlev, V., Suruceanu, G., Caliman, A., Rudra, A., Mircea, A., Mereuta, A., Tadeoni, S., Berseth, C.-A., Achtenhagen, M., Boucart, J., Kapon, E.

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1.5 μm VCSEL structure optimization for high-power and high-temperature operation von Mereuta, A., Syrbu, A., Iakovlev, V., Rudra, A., Caliman, A., Suruceanu, G., Berseth, C.-A., Deichsel, E., Kapon, E.

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3.125-Gb/s modulation up to 70/spl deg/C using 1.3-/spl mu/m VCSELs fabricated with localized wafer fusion for 10GBASE LX4 applications von Boucart, J., Suruceanu, G., Royo, P., Iakovlev, V.I., Syrbu, A., Caliman, A., Mereuta, A., Mircea, A., Berseth, C.-A., Rudra, A., Kapon, E.

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Cavity Mode-Gain Peak Tradeoff for 1320-nm Wafer-Fused VCSELs With 3-mW Single-Mode Emission Power and 10-Gb/s Modulation Speed Up to 70 super( degree )C von Mircea, A, Caliman, A, Iakovlev, V, Mereuta, A, Suruceanu, G, Berseth, C-A, Royo, P, Syrbu, A, Kapon, E

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1.5μm VCSEL structure optimization for high-power and high-temperature operation von MEREUTA, A, SYRBU, A, IAKOVLEV, V, RUDRA, A, CALIMAN, A, SURUCEANU, G, BERSETH, C.-A, DEICHSEL, E, KAPON, E

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8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band von Caliman, A., Iakovlev, V., Mereuta, A., Sirbu, A., Suruceanu, G., Kapon, E.

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3.125-Gb/s modulation up to 70 deg C using 1.3-mum VCSELs fabricated with localized wafer fusion for 10GBASE LX4 applications von Boucart, J, Suruceanu, G, Royo, P, Iakovlev, V I, Syrbu, A, Caliman, A, Mereuta, A, Mircea, A, Berseth, C-A, Rudra, A, Kapon, E

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