Chemical Sensing of 2D Graphene/MoS2 Heterostructure device von Cho, Byungjin, Yoon, Jongwon, Lim, Sung Kwan, Kim, Ah Ra, Kim, Dong-Ho, Park, Sung-Gyu, Kwon, Jung-Dae, Lee, Young-Joo, Lee, Kyu-Hwan, Lee, Byoung Hun, Ko, Heung Cho, Hahm, Myung Gwan

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Wafer-Scale Integration of Highly Uniform and Scalable MoS2 Transistors von Kim, Yonghun, Kim, Ah Ra, Zhao, Guoqing, Choi, Sun Young, Kang, Soo Cheol, Lim, Sung Kwan, Lee, Kang Eun, Park, Jucheol, Lee, Byoung Hun, Hahm, Myung Gwan, Kim, Dong-Ho, Yun, Jungheum, Lee, Kyu Hwan, Cho, Byungjin

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Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors von Kang, Chang Goo, Lee, Young Gon, Lee, Sang Kyung, Park, Eunji, Cho, Chunhum, Lim, Sung Kwan, Hwang, Hyeon Jun, Lee, Byoung Hun

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Metal Decoration Effects on the Gas-Sensing Properties of 2D Hybrid-Structures on Flexible Substrates von Cho, Byungjin, Yoon, Jongwon, Lim, Sung Kwan, Kim, Ah Ra, Choi, Sun-Young, Kim, Dong-Ho, Lee, Kyu Hwan, Lee, Byoung Hun, Ko, Heung Cho, Hahm, Myung Gwan

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Effects of multi-layer graphene capping on Cu interconnects von Kang, Chang Goo, Lim, Sung Kwan, Lee, Sangchul, Lee, Sang Kyung, Cho, Chunhum, Lee, Young Gon, Hwang, Hyeon Jun, Kim, Younghun, Choi, Ho Jun, Choe, Sun Hee, Ham, Moon-Ho, Lee, Byoung Hun

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Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE MoS2 stack von Park, Woojin, Yang, Jin Ho, Kang, Chang Goo, Lee, Young Gon, Hwang, Hyeon Jun, Cho, Chunhum, Lim, Sung Kwan, Kang, Soo Cheol, Hong, Woong-Ki, Lee, Sang Kyung, Lee, Sangchul, Lee, Byoung Hun

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Quantitative Analysis of Deuterium Annealing Effect on Poly-Si TFTs by Low Frequency Noise and DC – Characterization von Kim, Do-Hyun, Lim, Sung Kwan, Bae, Hagyoul, Kim, Choong-Ki, Lee, Seung-Wook, Seo, Myungsoo, Kim, Seong-Yeon, Hwang, Kyu-Man, Lee, Geon-Beom, Lee, Byoung Hun, Choi, Yang-Kyu

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Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET von Kang, Soo Cheol, Lim, Donghwan, Lim, Sung Kwan, Noh, Jinwoo, Kim, Seung-Mo, Lee, Sang Kyung, Choi, Changhwan, Lee, Byoung Hun

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Operation Mechanism of a MoS₂/BP Heterojunction FET von Lim, Sung Kwan, Kang, Soo Cheol, Yoo, Tae Jin, Lee, Sang Kyung, Hwang, Hyeon Jun, Lee, Byoung Hun

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Electrical characteristics of wrinkle-free graphene formed by laser graphitization of 4H-SiC von Hwang, Hyeon Jun, Cho, Chunhum, Lim, Sung Kwan, Lee, Seung Yong, Kang, Chang Goo, Hwang, Hyunsang, Lee, Byoung Hun

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Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment von CHANG GOO KANG, SANG KYUNG LEE, BYOUNG HUN LEE, YOUNG GON LEE, HYEON JUN HWANG, CHO, Chunhum, SUNG KWAN LIM, HEO, Jinseong, CHUNG, Hyun-Jong, YANG, Heejun, SEO, Sunae

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Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes von Yoon, Jongwon, Park, Woojin, Bae, Ga-Yeong, Kim, Yonghun, Jang, Hun Soo, Hyun, Yujun, Lim, Sung Kwan, Kahng, Yung Ho, Hong, Woong-Ki, Lee, Byoung Hun, Ko, Heung Cho

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Au nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices von Choe, Minhyeok, Cho, Chu-Young, Shim, Jae-Phil, Park, Woojin, Lim, Sung Kwan, Hong, Woong-Ki, Hun Lee, Byoung, Lee, Dong-Seon, Park, Seong-Ju, Lee, Takhee

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Quantitatively estimating defects in graphene devices using discharge current analysis method von Jung, Ukjin, Lee, Young Gon, Kang, Chang Goo, Lee, Sangchul, Kim, Jin Ju, Hwang, Hyeon June, Lim, Sung Kwan, Ham, Moon-Ho, Lee, Byoung Hun

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Origin of the channel width dependent field effect mobility of graphene field effect transistors von Lee, Young Gon, Lim, Sung Kwan, Kang, Chang Goo, Kim, Yun Ji, Choi, Doo Hua, Chung, Hyun-Jong, Choi, Rino, Lee, Byoung Hun

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Wafer-Scale Integration of Highly Uniform and Scalable MoS 2 Transistors von Kim, Yonghun, Kim, Ah Ra, Zhao, Guoqing, Choi, Sun Young, Kang, Soo Cheol, Lim, Sung Kwan, Lee, Kang Eun, Park, Jucheol, Lee, Byoung Hun, Hahm, Myung Gwan, Kim, Dong-Ho, Yun, Jungheum, Lee, Kyu Hwan, Cho, Byungjin

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Chemical Sensing of 2D Graphene/MoS 2 Heterostructure device von Cho, Byungjin, Yoon, Jongwon, Lim, Sung Kwan, Kim, Ah Ra, Kim, Dong-Ho, Park, Sung-Gyu, Kwon, Jung-Dae, Lee, Young-Joo, Lee, Kyu-Hwan, Lee, Byoung Hun, Ko, Heung Cho, Hahm, Myung Gwan

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Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS 2 stack von Park, Woojin, Yang, Jin Ho, Kang, Chang Goo, Lee, Young Gon, Hwang, Hyeon Jun, Cho, Chunhum, Lim, Sung Kwan, Kang, Soo Cheol, Hong, Woong-Ki, Lee, Sang Kyung, Lee, Sangchul, Lee, Byoung Hun

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Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS sub(2) stack von Park, Woojin, Yang, Jin Ho, Kang, Chang Goo, Lee, Young Gon, Hwang, Hyeon Jun, Cho, Chunhum, Lim, Sung Kwan, Kang, Soo Cheol, Hong, Woong-Ki, Lee, Sang Kyung, Lee, Sangchul, Lee, Byoung Hun

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Flexible Electronics: Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes (Small 19/2013) von Yoon, Jongwon, Park, Woojin, Bae, Ga-Yeong, Kim, Yonghun, Jang, Hun Soo, Hyun, Yujun, Lim, Sung Kwan, Kahng, Yung Ho, Hong, Woong-Ki, Lee, Byoung Hun, Ko, Heung Cho

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