Memristors for Neuromorphic Circuits and Artificial Intelligence Applications von Miranda, Enrique, Sune, Jordi

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A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown von Long, Shibing, Lian, Xiaojuan, Cagli, Carlo, Perniola, Luca, Miranda, Enrique, Liu, Ming, Sune, Jordi

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Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM von Long, Shibing, Perniola, Luca, Cagli, Carlo, Buckley, Julien, Lian, Xiaojuan, Miranda, Enrique, Pan, Feng, Liu, Ming, Suñé, Jordi

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Quantum-size effects in hafnium-oxide resistive switching von Long, Shibing, Lian, Xiaojuan, Cagli, Carlo, Cartoixà, Xavier, Rurali, Riccardo, Miranda, Enrique, Jiménez, David, Perniola, Luca, Liu, Ming, Suñé, Jordi

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Conductance Quantization in Resistive Random Access Memory von Li, Yang, Long, Shibing, Liu, Yang, Hu, Chen, Teng, Jiao, Liu, Qi, Lv, Hangbing, Suñé, Jordi, Liu, Ming

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Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices von Lian, Xiaojuan, Cartoixà, Xavier, Miranda, Enrique, Perniola, Luca, Rurali, Riccardo, Long, Shibing, Liu, Ming, Suñé, Jordi

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Reset Statistics of NiO-Based Resistive Switching Memories von Shibing Long, Cagli, C., Ielmini, D., Ming Liu, Sune, J.

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Analysis and modeling of resistive switching statistics von Long, Shibing, Cagli, Carlo, Ielmini, Daniele, Liu, Ming, Suñé, Jordi

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Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator von Li, Yu, Zhang, Meiyun, Long, Shibing, Teng, Jiao, Liu, Qi, Lv, Hangbing, Miranda, Enrique, Suñé, Jordi, Liu, Ming

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Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory von Calka, Pauline, Sowinska, Malgorzata, Bertaud, Thomas, Walczyk, Damian, Dabrowski, Jarek, Zaumseil, Peter, Walczyk, Christian, Gloskovskii, Andrei, Cartoixà, Xavier, Suñé, Jordi, Schroeder, Thomas

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Electrochemical Tuning of Metal Insulator Transition and Nonvolatile Resistive Switching in Superconducting Films von Palau, Anna, Fernandez-Rodriguez, Alejandro, Gonzalez-Rosillo, Juan Carlos, Granados, Xavier, Coll, Mariona, Bozzo, Bernat, Ortega-Hernandez, Rafael, Suñé, Jordi, Mestres, Narcís, Obradors, Xavier, Puig, Teresa

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Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation von Wang, Guoming, Long, Shibing, Yu, Zhaoan, Zhang, Meiyun, Ye, Tianchun, Li, Yang, Xu, Dinglin, Lv, Hangbing, Liu, Qi, Wang, Ming, Xu, Xiaoxin, Liu, Hongtao, Yang, Baohe, Suñé, Jordi, Liu, Ming

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Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure von Zhang, Meiyun, Long, Shibing, Wang, Guoming, Xu, Xiaoxin, Li, Yang, Liu, Qi, Lv, Hangbing, Lian, Xiaojuan, Miranda, Enrique, Suñé, Jordi, Liu, Ming

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Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories von Jiménez, David, Miranda, Enrique, Tsurumaki-Fukuchi, Atsushi, Yamada, Hiroyuki, Suñé, Jordi, Sawa, Akihito

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Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides von Aguirre, Fernando Leonel, Rodriguez-Fernandez, Alberto, Pazos, Sebastian Matias, Sune, Jordi, Miranda, Enrique, Palumbo, Felix

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Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition von Aguirre, Fernando Leonel, Pazos, Sebastian Matias, Palumbo, Felix, Sune, Jordi, Miranda, Enrique

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Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard von Suñé, Jordi, Aguirre, Fernando, Bargalló González, Mireia, Campabadal, Francesca, Miranda, Enrique

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On the Thermal Models for Resistive Random Access Memory Circuit Simulation von Roldan, Juan B., Gonzalez-Cordero, Gerardo, Picos, Rodrigo, Miranda, Enrique, Palumbo, Felix, Jimenez-Molinos, Francisco, Moreno, Enrique, Maldonado, David, Baldoma, Santiago B., Moner Al Chawa, Mohamad, de Benito, Carol, Stavrinides, Stavros G., Sune, Jordi, Chua, Leon O.

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Fast Fitting of the Dynamic Memdiode Model to the Conduction Characteristics of RRAM Devices Using Convolutional Neural Networks von Aguirre, Fernando Leonel, Piros, Eszter, Kaiser, Nico, Vogel, Tobias, Petzold, Stephan, Gehrunger, Jonas, Oster, Timo, Hochberger, Christian, Suñé, Jordi, Alff, Lambert, Miranda, Enrique

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Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device von Zhang, Meiyun, Long, Shibing, Li, Yang, Liu, Qi, Lv, Hangbing, Miranda, Enrique, Suñé, Jordi, Liu, Ming

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