An Infrared Silicon Optical Modulator of Metal–Oxide–Semiconductor Capacitor Based on Accumulation-Carrier Absorption von Kajikawa, Kenta, Tabei, Tetsuo, Sunami, Hideo

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Potentiality of Metal–Oxide–Semiconductor Silicon Optical Modulator Based on Free Carrier Absorption von Tabei, Tetsuo, Hirata, Tomoki, Kajikawa, Kenta, Sunami, Hideo

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Optimized Silicidation Technique for Source and Drain of Fin-Type Field-Effect Transistor von Okuyama, Kiyoshi, Sugimura, Atsushi, Sunami, Hideo

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Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing von Kudo, Takashi, Kasama, Toshihiro, Ikeda, Takeshi, Hata, Yumehiro, Tokonami, Shiho, Yokoyama, Shin, Kikkawa, Takamaro, Sunami, Hideo, Ishikawa, Tomohiro, Suzuki, Masato, Okuyama, Kiyoshi, Tabei, Tetsuo, Ohkura, Kensaku, Kayaba, Yasuhisa, Tanushi, Yuichiro, Amemiya, Yoshiteru, Cho, Yoshinori, Monzen, Tomomi, Murakami, Yuji, Kuroda, Akio, Nakajima, Anri

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Fabrication of Spin-Coated Optical Waveguides for Optically Interconnected LSI and Influence of Fabrication Process on Underlying Metal–Oxide–Semiconductor Capacitors von Tabei, Tetsuo, Maeda, Kazuhiko, Yokoyama, Shin, Sunami, Hideo

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A High-Aspect-Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation von Katakami, Akira, Kobayashi, Kei, Sunami, Hideo

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Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p -metal–oxide–semiconductor field-effect transistors von Nakajima, Anri, Yoshimoto, Takashi, Kidera, Toshiro, Obata, Katsunori, Yokoyama, Shin, Sunami, Hideo, Hirose, Masataka

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Application of Arsenic Plasma Doping in Three-Dimensional MOS Transistors and the Doping Profile Evaluation von Kobayashi, Kei, Eto, Takanori, Okuyama, Kiyoshi, Shibahara, Kentaro, Sunami, Hideo

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A Proposal of Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications von Furukawa, Tomoyasu, Yamashita, Hiroki, Sunami, Hideo

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Preliminary characterization of a metal–gas-semiconductor field-effect transistor (MGSFET) proposed von Ashida, Yoichi, Okuyama, Kiyoshi, Sunami, Hideo

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Field-Shield Trench Isolation with Self-Aligned Field Oxide von Takase, Akihiro, Kidera, Toshirou, Sunami, Hideo

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The Role of the Trench Capacitor in DRAM Innovation von Sunami, Hideo

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Organic Contamination Dependence of Process-Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors von Khosru, Quazi Deen Mohd, Yokoyama, Shin, Nakajima, Anri, Shibahara, Kentaro, Kikkawa, Takamaro, Sunami, Hideo, Yoshino, Takenobu

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Apoptotic Cell Death in Kikuchi's Disease: A TEM Study von Iguchi, Kishiko Sunami, Hideo Yamane, Kazuo Konishi, Masahiro Takayama, Yoshiaki Nakai, Takayuki Nakagawa, Shigetaro Shibata, Keizo Nishimura, Hiroyoshi

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Proposal of Vertical-Channel Metal Oxide Semiconductor Field-Effect Transistor with Entirely Oxidized Silicon Beam Isolation von Sugimura, Atsushi, Okuyama, Kiyoshi, Sunami, Hideo

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What Is True Material Revolution in LSI? von SUNAMI, Hideo

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Plasma doping induced damages associated with source/drain formation in three-dimensional beam-channel MOS transistor von Kobayashi, Kei, Okuyama, Kiyoshi, Sunami, Hideo

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What Is True Material Revolution in LSI? von SUNAMI, Hideo

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Role of Amino Acids in Cochlear Degeneration: Morphological Changes in Cochlear Outer Hair Cells Following Glutamate Application von Sunami, Hideo Yamane, Kazuo Konishi, Hiroyoshi Iguchi, Takayuki Nakagawa, Shigetaro Shibata, Masahiro Takayama, Yoshiaki Nakai, Kishiko

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Control of Subthreshold Characteristics of Narrow-Channel Silicon-on-Insulator n-Type Metal–Oxide–Semiconductor Transistor with Additional Side Gate Electrodes von Okuyama, Kiyoshi, Yoshikawa, Koji, Sunami, Hideo

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