Demonstration of Nanosecond Operation in Stochastic Magnetic Tunnel Junctions von Safranski, Christopher, Kaiser, Jan, Trouilloud, Philip, Hashemi, Pouya, Hu, Guohan, Sun, Jonathan Z

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Precession coupled spin current in spin torque driven magnetic tunnel junctions von Sun, Jonathan Z.

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Measurement of the spin-transfer-torque vector in magnetic tunnel junctions von Sankey, Jack C., Cui, Yong-Tao, Sun, Jonathan Z., Slonczewski, John C., Buhrman, Robert A., Ralph, Daniel C.

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Spin-transfer torque switched magnetic tunnel junction for memory technologies von Sun, Jonathan Z.

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Memory-compatible perpendicular magnetic tunnel junctions under bi-directional strobe write pulses: A method for generating true random number bits at high speed von Sun, Jonathan Z.

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Material parameters of perpendicularly magnetized tunnel junctions from spin torque ferromagnetic resonance techniques von Safranski, Christopher J., Chen, Yu-Jin, Krivorotov, Ilya N., Sun, Jonathan Z.

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A memorial symposium for John C. Slonczewski at the 64th MMM conference von Maekawa, Sadamichi, Sun, Jonathan Z.

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Planar Hall Driven Torque in a Ferromagnet/Nonmagnet/Ferromagnet System von Safranski, Christopher, Sun, Jonathan Z., Xu, Jun-Wen, Kent, Andrew D.

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Inferring the three-dimensional structures of the X-chromosome during X-inactivation von Zhu, Hao, Wang, Nan, Sun, Jonathan Z, Pandey, Ras B, Wang, Zheng

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A perspective on electrical generation of spin current for magnetic random access memories von Safranski, Christopher, Sun, Jonathan Z., Kent, Andrew D.

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Planar Hall Driven Torque in a Ferromagnet/Nonmagnet/Ferromagnet System von Safranski, Christopher, Sun, Jonathan Z, Xu, Jun-Wen, Kent, Andrew D

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Low-Barrier Magnet Design for Efficient Hardware Binary Stochastic Neurons von Hassan, Orchi, Faria, Rafatul, Camsari, Kerem Yunus, Sun, Jonathan Z., Datta, Supriyo

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Settling Time of Current-Tunable Probabilistic Bit's Distribution von McGoldrick, Brooke Chelsea, Sun, Jonathan Z.

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Interface moment dynamics and its contribution to spin-transfer torque switching process in magnetic tunnel junctions von Safranski, Christopher, Sun, Jonathan Z.

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Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications von Safranski, Christopher, Hu, Guohan, Sun, Jonathan Z., Hashemi, Pouya, Brown, Stephen L., Buzi, Luxherta, D'Emic, Christopher P., Edwards, Eric R. J., Galligan, Eileen, Gottwald, Matthias G., Gunawan, Oki, Karimeddiny, Saba, Jung, Hyunsung, Kim, Juhyun, Latzko, Ken, Trouilloud, Philip L., Worledge, Daniel C.

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Ion beam etching dependence of spin–orbit torque memory devices with switching current densities reduced by Hf interlayers von Ren, Haowen, Wu, Shih-Yu, Sun, Jonathan Z., Fullerton, Eric E.

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Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory von Nowak, Janusz J., Robertazzi, Ray P., Sun, Jonathan Z., Hu, Guohan, Park, Jeong-Heon, Lee, JungHyuk, Annunziata, Anthony J., Lauer, Gen P., Kothandaraman, Raman, O'Sullivan, Eugene J., Trouilloud, Philip L., Kim, Younghyun, Worledge, Daniel C.

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Feasibility of an active-read approach for spin-torque switched magnetic tunnel junctions in a random access memory von Sun, Jonathan Z., DeBrosse, John, Wang, Pokang

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Temperature dependence of current-induced magnetization switching in spin valves with a ferrimagnetic CoGd free layer von Jiang, Xin, Gao, Li, Sun, Jonathan Z, Parkin, Stuart S P

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Metrology and metrics for spin-transfer-torque switched magnetic tunnel junctions in memory applications von Sun, Jonathan Z., Safranski, Christopher

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