On the origin of red luminescence from iron-doped β-Ga2O3 bulk crystals von Sun, Rujun, Ooi, Yu Kee, Dickens, Peter T., Lynn, Kelvin G., Scarpulla, Michael A.

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Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped β-Ga2O3 crystals von Sun, Rujun, Ooi, Yu Kee, Bhattacharyya, Arkka, Saleh, Muad, Krishnamoorthy, Sriram, Lynn, Kelvin G., Scarpulla, Michael A.

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Electronic and ionic conductivity in β-Ga2O3 single crystals von Ghadbeigi, Leila, Sun, Rujun, Jesenovec, Jani, Bhattacharyya, Arkka, McCloy, John, Krishnamoorthy, Sriram, Scarpulla, Michael A., Sensale-Rodriguez, Berardi

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Sb2S3 thin films prepared by vulcanizing evaporated metallic precursors von Zhang, Leng, Zhuang, Daming, Zhao, Ming, Gong, Qianming, Guo, Li, Ouyang, Liangqi, Sun, Rujun, Wei, Yaowei, Lyu, Xunyan, Peng, Xiao

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Evaluating performance of AI operators using roofline model von Chen, Zhengbo, Zheng, Fang, Yu, Qi, Sun, Rujun, Guo, Feng, Chen, Zuoning

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Optical Characterization of Gallium Oxide α and β Polymorph Thin-Films Grown on c-Plane Sapphire von Ghadbeigi, Leila, Cooke, Jacqueline, Dang, Giang T., Kawaharamura, Toshiyuki, Yasuoka, Tatsuya, Sun, Rujun, Ranga, Praneeth, Krishnamoorthy, Sriram, Scarpulla, Michael A., Sensale-Rodriguez, Berardi

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10.3%-efficient submicron-thick Cu(In,Ga)Se2 solar cells with absorber fabricated by sputtering In2Se3, CuGaSe2 and Cu2Se targets von Peng, Xiao, Zhao, Ming, Zhuang, Daming, Sun, Rujun, Zhang, Leng, Wei, Yaowei, Lv, Xunyan, Wu, Yixuan, Ren, Guoan

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Study on how the content of selenium in the precursors influences the properties of CuInSe2 thin films von Peng, Xiao, Zhao, Ming, Zhuang, Daming, Sun, Rujun, Zhang, Leng, Wei, Yaowei, Lv, Xunyan, Wu, Yixuan, Ren, Guoan

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Beyond 11% efficient Cu2ZnSn(Se,S)4 thin film solar cells by cadmium alloying von Sun, Rujun, Zhuang, Daming, Zhao, Ming, Gong, Qianming, Scarpulla, Mike, Wei, Yaowei, Ren, Guoan, Wu, Yixuan

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Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(AlxGa1−x)2O3/β-Ga2O3 heterostructure channels von Ranga, Praneeth, Bhattacharyya, Arkka, Chmielewski, Adrian, Roy, Saurav, Sun, Rujun, Scarpulla, Michael A., Alem, Nasim, Krishnamoorthy, Sriram

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Cu2ZnSnSSe4 solar cells with 9.6% efficiency via selenizing Cu-Zn-Sn-S precursor sputtered from a quaternary target von Sun, Rujun, Zhuang, Daming, Zhao, Ming, Gong, Qianming, Wei, Yaowei, Ren, Guoan, Wu, Yixuan

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Influences of Orientation and Remote O2 Plasma Exposure on the Interface Properties of SiO2/ β -Ga2O3 MOS Capacitors von Sun, Rujun, Bhattacharyya, Arkka, Saleh, Muad, Krishnamoorthy, Sriram, Scarpulla, Michael A

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Influences of Orientation and Remote O 2 Plasma Exposure on the Interface Properties of SiO 2 / β -Ga 2 O 3 MOS Capacitors von Sun, Rujun, Bhattacharyya, Arkka, Saleh, Muad, Krishnamoorthy, Sriram, Scarpulla, Michael A.

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Influences of Orientation and Remote O } Plasma Exposure on the Interface Properties of SiO } / \beta -Ga } O } MOS Capacitors von Sun, Rujun, Bhattacharyya, Arkka, Saleh, Muad, Krishnamoorthy, Sriram, Scarpulla, Michael A.

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Degradation of β-Ga 2 O 3 Vertical Ni/Au Schottky Diodes Under Forward Bias von Sun, Rujun, Balog, Andrew R., Yang, Haobo, Alem, Nasim, Scarpulla, Michael A.

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Oxygen annealing induced changes in defects within β-Ga2O3 epitaxial films measured using photoluminescence von Sun, Rujun, Ooi, Yu Kee, Ranga, Praneeth, Bhattacharyya, Arkka, Krishnamoorthy, Sriram, Scarpulla, Michael A

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Degradation of β-Ga2O3 vertical Ni/Au Schottky diodes under forward bias von Sun, Rujun, Balog, Andrew R., Yang, Haobo, Alem, Nasim, Scarpulla, Michael A.

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Oxygen annealing induced changes in defects within β-Ga 2 O 3 epitaxial films measured using photoluminescence von Sun, Rujun, Ooi, Yu Kee, Ranga, Praneeth, Bhattacharyya, Arkka, Krishnamoorthy, Sriram, Scarpulla, Michael A

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High-sulfur Cu2ZnSn(S,Se)4 films by sulfurizing as-deposited CZTSe film: The evolutions of phase, crystallinity and S/(S+Se) ratio von Sun, Rujun, Zhao, Ming, Zhuang, Daming, Gong, Qianming, Guo, Li, Ouyang, Liangqi, Wei, Yaowei

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An investigation on the relationship between open circuit voltage and grain size for CZTSSe thin film solar cells fabricated by selenization of sputtered precursors von Wei, Yaowei, Zhuang, Daming, Zhao, Ming, Gong, Qianming, Sun, Rujun, Ren, Guoan, Wu, Yixuan, Zhang, Leng, Lyu, Xunyan, Peng, Xiao, Wei, Jinquan

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