Effect of Stacking Faults in Triangular Defects on 4H-SiC Junction Barrier Schottky Diodes von Konishi, Kazuya, Nakata, Shuhei, Nakaki, Yoshiyuki, Nakao, Yukiyasu, Nagae, Akemi, Tanaka, Takanori, Nakamura, Yu, Toyoda, Yoshihiko, Sumitani, Hiroaki, Oomori, Tatsuo

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Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method von Sumitani, Hiroaki, Tanaka, Takanori, Tomita, Nobuyuki, Tarutani, Masayoshi, Ohno, Akihito, Toyoda, Yoshihiko, Hamano, Kenichi, Yamakawa, Satoshi, Mitani, Yoichiro, Kuroiwa, Takeharu, Imaizumi, Masayuki

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Theoretical Analysis on Mechanical Deformation of Membrane-Based Photomask Blanks von Marumoto, Kenji, Aya, Sunao, Yabe, Hedeki, Okada, Tatsunori, Sumitani, Hiroaki

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Theoretical Analysis on Mechanical Deformation of Membrane-Based Photomask Blanks von Marumoto, Kenji, Aya, Sunao, Yabe, Hedeki, Okada, Tatsunori, Sumitani, Hiroaki

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High Aspect Pattern Fabrication by Nano Imprint Lithography Using Fine Diamond Mold von Hirai, Yoshihiko, Yoshida, Satoshi, Takagi, Nobuyuki, Tanaka, Yoshio, Yabe, Hideki, Sasaki, Kei, Sumitani, Hiroaki, Yamamoto, Kazuhiro

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4H-SiC Power Metal–Oxide–Semiconductor Field Effect Transistors and Schottky Barrier Diodes of 1.7 kV Rating von Miura, Naruhisa, Yoshida, Shohei, Nakao, Yukiyasu, Matsuno, Yoshinori, Kuroda, Ken-ichi, Watanabe, Shoyu, Imaizumi, Masayuki, Sumitani, Hiroaki, Yamamoto, Hidekazu, Oomori, Tatsuo

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Investigation of Cell Structure and Doping for Low-On-Resistance SiC Metal--Oxide--Semiconductor Field-Effect Transistors with Blocking Voltage of 3300 V von Hamada, Kenji, Miura, Naruhisa, Hino, Shiro, Kawakami, Tsuyoshi, Imaizumi, Masayuki, Sumitani, Hiroaki, Oomori, Tatsuo

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Suppression of Pattern Edge Roughness by Low Ion Strength Developer von Kumada, Teruhiko, Sumitani, Hiroaki, Matsui, Yasuji

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Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy von Imaizumi, Masayuki, Toyoda, Yoshihiko, Tanaka, Takanori, Mitani, Yoichiro, Sumitani, Hiroaki, Tomita, Nobuyuki, Kuroiwa, Takeharu, Yamakawa, Satoshi, Sakai, Masashi, Tarutani, Masayoshi, Kawabata, Naoyuki

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Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density von Sumitani, Hiroaki, Kuroiwa, Takeharu, Tanaka, Takanori, Tomita, Nobuyuki, Tarutani, Masayoshi, Toyoda, Yoshihiko, Yamakawa, Satoshi, Mitani, Yoichiro, Imaizumi, Masayuki, Kawabata, Naoyuki

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Influence of Growth Pressure and Addition of HCI Gas on Growth Rate of 4H-SiC Epitaxy von Tanaka, Takanori, Kawabata, Naoyuki, Mitani, Yoichiro, Sakai, Masashi, Tomita, Nobuyuki, Tarutani, Masayoshi, Kuroiwa, Takeharu, Toyoda, Yoshihiko, Imaizumi, Masayuki, Sumitani, Hiroaki, Yamakawa, Satoshi

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Properties of a SiC Schottky Barrier Diode Fabricated with a Thin Substrate von Okabe, Hiroaki, Sumitani, Hiroaki, Suehiro, Yoshiyuki, Kobayashi, Kazuo, Murasaki, Hiroyuki, Toyoda, Yoshihiko, Yamakawa, Satoshi, Kuroiwa, Takeharu, Nakanishi, Yosuke, Sugahara, Kazuyuki, Tominaga, Takaaki

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Characteristics of a Schottky Barrier Diode and the SiC Wafers Sliced by Wire Electrical Discharge Machining von Sumitani, Hiroaki, Itokazu, Atsushi, Miyake, Hidetaka, Tomita, Nobuyuki, Furusho, Tomoaki, Toyoda, Yoshihiko, Hashimoto, Takashi, Yamakawa, Satoshi, Kuroiwa, Takeharu, Nakaki, Yoshiyuki, Sato, Tatsushi

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SiC-MOSFET Structure Enabling Fast Turn-On and -Off Switching von Furukawa, Akihiko, Sumitani, Hiroaki, Watanabe, Shoyu, Nakata, Shuhei, Imaizumi, Masayuki, Hino, Shiro, Oomori, Tatsuo, Miura, Naruhisa, Nakao, Yukiyasu

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Sub-hundred nanometre pitch measurements using an AFM with differential laser interferometers for designing usable lateral scales von Misumi, Ichiko, Gonda, Satoshi, Huang, Qiangxian, Keem, Taeho, Kurosawa, Tomizo, Fujii, Akihiro, Hisata, Nahoko, Yamagishi, Takeshi, Fujimoto, Hirohisa, Enjoji, Ken, Aya, Sunao, Sumitani, Hiroaki

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Alignment Mark Optimization to Reduce Tool- and Wafer-Induced Shift for XRA-1000 von Ina, Hideki, Sentoku, Koichi, Matsumoto, Takahiro, Sumitani, Hiroaki, Suita, Muneyoshi

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Pattern Resolution in X-ray Lithography Using Pattern Replication Technique on a Mask von Kise, Koji, Amemiya, Mitsuaki, Watanabe, Hiroshi, Itoga, Kenji, Yabe, Hideki, Sumitani, Hiroaki

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Critical dimension control in synchrotron radiation lithography using a negative-tone chemical amplification resist von SUMITANI, H, WATANABE, H, ITOGA, K, HIFUMI, T, SUITA, M, OGUSHI, N, MIZUSAWA, N, UDA, K

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Resist Characteristics with Electron Beam and SR Exposures von Ishikawa, Kiyoshi, Sato, Mitsuru, Komano, Hiroshi, Kumada, Teruhiko, Sumitani, Hiroaki

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Crystalline Recovery after Activation Annealing of Al Implanted 4H-SiC von Watanabe, Tomokatsu, Sumitani, Hiroaki, Mitani, T., Hattori, Ryo, Oomori, Tatsuo

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