Bulk Growth of Large Area SiC Crystals von Dudley, Michael, Deyneka, Eugene, Leonard, R.T., Ambati, Jyothi, Seaman, Jeff, Powell, Adrian R., Guo, J.Q., Burk, Albert A., Balkas, Elif, Kramarenko, Olek, Horton, Chris, Sakhalkar, Varad, O’Loughlin, M., Paisley, Michael J., Sumakeris, Joseph J., Khlebnikov, Yuri, Gangwal, Sumit, Tsevtkov, V., McClure, Andy

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Dislocation Characterization in 4H-SiC Crystals von Balkas, Elif, Deyneka, Eugene, Guo, Jian Qiu, Leonard, R.T., Yang, Yu, Seaman, Jeff, Paisley, Michael J., Dudley, Michael, Sumakeris, Joseph J., Khlebnikov, Yuri, Tsevtkov, V., Powell, Adrian R.

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Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers von Hull, Brett A., Zhang, Q. Jon, Tsvetkov, Valeri F., Hefner, A., Paisley, Michael J., O'Loughlin, Michael J., Sumakeris, Joseph J., Rivera, Angel, Powell, Adrian R., Richmond, Jim

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Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers von Hull, B.A., Sumakeris, J.J., O'Loughlin, M.J., Qingchun Zhang, Richmond, J., Powell, A.R., Imhoff, E.A., Hobart, K.D., Rivera-Lopez, A., Hefner, A.R.

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Design and Characterization of High-Voltage 4H-SiC p-IGBTs von Zhang, Qingchun, Huang, Alex Q., Wang, Jun, Jonas, Charlotte, Callanan, Robert, Sumakeris, Joseph J., Ryu, Sei-Hyung, Das, Mrinal, Agarwal, Anant, Palmour, John

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Using Ray Tracing Simulations for Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method von Raghothamachar, Balaji, Dudley, Michael, Goue, Ouloide, Yang, Yu, Guo, Jian Qiu, Wu, Fang Zhen, Sumakeris, Joseph J., Leonard, R.T.

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Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy von Zhang, Q., Stahlbush, Robert E., Sumakeris, Joseph J., Liu, Kendrick X.

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Performance of Low-Dark-Current 4H-SiC Avalanche Photodiodes With Thin Multiplication Layer von Xiangyi Guo, Beck, A.L., Zhihong Huang, Ning Duan, Campbell, J.C., Emerson, D., Sumakeris, J.J.

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A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching von Jonas, Charlotte, Capell, Craig, Zhang, Q. Jon, Donofrio, Matthew, Clayton, Jack, Haney, Sarah K., Husna, Fatima, Das, Mrinal K., Callanan, Robert, Sumakeris, Joseph J., Richmond, Jim

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Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields von Krishnaswami, Sumi, Hull, Brett A., Sumakeris, Joseph J., Powell, Adrian R., Das, Mrinal K., Richmond, Jim

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Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices von McD. Hobgood, H., Das, Mrinal K., Paisley, Michael J., Skowronski, Marek, Sumakeris, Joseph J., Müller, Stephan G., Ha, Seo Young, Palmour, John W., Carter Jr, Calvin H.

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Defect Status in SiC Manufacturing von Burk, Albert A., Khlebnikov, I., Tsvetkov, Valeri F., Leonard, R.T., Paisley, Michael J., O'Loughlin, Michael J., Malta, D.P., Powell, Adrian R., Carter Jr, Calvin H., Hobgood, H.McD, Brady, M.F., Basceri, C., Berkman, Elif, Khlebnikov, Y., Balakrishna, Vijay, Balkas, C., Sumakeris, Joseph J., Deyneka, E.

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Critical Technical Issues in High Voltage SiC Power Devices von Burk, Albert A., Ryu, Sei Hyung, Stahlbush, Robert E., O'Loughlin, Michael J., Powell, Adrian R., Richmond, Jim, Jonas, Charlotte, Capell, Craig, Hull, Brett A., Zhang, Q. Jon, Haney, Sarah K., Das, Mrinal K., Agarwal, Anant K., Callanan, Robert, Sumakeris, Joseph J., O`Neil, Michael, Palmour, John W.

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Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices von Hull, Brett A., Skowronski, Marek, O'Loughlin, Michael J., Sumakeris, Joseph J., Balakrishna, Vijay

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Evolution of Drift-Free, High Power 4H-SiC PiN Diodes von Hull, Brett A., Sumakeris, Joseph J., Das, Mrinal K., Richmond, Jim

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Large Diameter 4H-SiC Substrates for Commercial Power Applications von Burk, Albert A., Brady, M.F., Tsvetkov, Valeri F., McD. Hobgood, H., Leonard, R.T., Trussell, R., Glass, R.C., Müller, Stephan G., Sumakeris, Joseph J., Powell, Adrian R., Carter Jr, Calvin H.

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Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications von Hull, Brett A., Sumakeris, Joseph J., Das, Mrinal K., Richmond, Jim, Palmour, John W.

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Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures von Stahlbush, Robert E., Hobart, Karl D., Sumakeris, Joseph J., Liu, Kendrick X.

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Drift-free 10-kV, 20-A 4H-SiC PiN diodes von Hull, Brett A, Das, Mrinal K, Sumakeris, Joseph J, Richmond, James T, Krishnaswami, Sumi

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Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes von Tang, Yi, Stahlbush, Robert E., Irvine, Kenneth G., Chow, T. Paul, Twigg, Mark E., Losee, Peter A., Sumakeris, Joseph J., Zhu, Lin, Wang, W.

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