200-mm Si CMOS Process-Compatible Integrated Passive Device Stack for Millimeter-Wave Monolithic 3-D Integration von Park, Minsik, Song, Jonghyun, Jeong, Jaeyong, Lim, Jeong-Taek, Song, Jae-Hyeok, Lee, Won-Chul, Sim, Gapseop, Cho, Huijae, Yoo, Dongeun, Kang, Minho, Ko, Hyoungho, Lee, Jooseok, Yang, Kyounghoon, Kim, Choul-Young, Kim, Youngsu, Sul, Woo-Suk, Kim, Sanghyeon, Lee, Jongwon

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Influence of Guard-Ring Structure on the Dark Count Rates of Silicon Photomultipliers von SUL, Woo-Suk, LEE, Chae-Hun, CHO, Gyu-Seong

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RF Characteristic Analysis Model Extraction on the Stacked Metal-Insulator-Metal Capacitors for Radio Frequency Applications von Sul, Woo Suk, Pyo, Sung Gyu

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Characterization of silicon photomultipliers at National Nano-Fab Center for PET-MR von Kim, Hyoungtaek, Sul, Woo Suk, Cho, Gyuseong

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Guard-Ring Structures for Silicon Photomultipliers von SUL, Woo-Suk, OH, Jung-Hun, LEE, Chae-Hun, CHO, Gyu-Seong, LEE, Wan-Gyu, KIM, Sam-Dong, RHEE, Jin-Koo

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Silicon photomultiplier modules for MRI-compatible PET von Sul, Woo-Suk, Kim, Hyoungtaek, Cho, Gyuseong

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Low-Noise Multimodal Reconfigurable Sensor Readout Circuit for Voltage/Current/Resistive/Capacitive Microsensors von You, Donggeun, Kim, Hyungseup, Kim, Jaesung, Han, Kwonsang, Heo, Hyunwoo, Kwon, Yongsu, Kim, Gyungtae, Sul, Woo Suk, Lee, Jong Won, Lee, Boung Ju, Ko, Hyoungho

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31.6 pJ/Conversion-step Energy-efficient 16-bit Successive Approximation Register Capacitance-to-digital Converter in a 0.18 μm CMOS Process von Ko, Youngwoon, Kim, Hyungseup, Mun, Yeongjin, Lee, Byeoncheol, Kim, Gyungtae, Sul, Woo Suk, Lee, Boung Ju, Ko, Hyoungho

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Low-noise 16-bit First-order Delta-sigma Capacitance-to-digital Converter for Capacitive Humidity Sensor von Lee, Byeoncheol, Kim, Hyungseup, Kim, Jaesung, Han, Kwonsang, Shin, Sangyoun, Kim, Gyungtae, Sul, Woo Suk, Lee, Boung Ju, Lee, Sangmin, Ko, Hyoungho

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Feasibility study on TOF-PET with fill factor improved SiPMs von Lee, Chaehun, Soo Kim, Young, Suk Sul, Woo, Kim, Hyoungtaek, Han Shin, Seung, Cho, Gyuseong

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Silicon-based integrated passive device stack for III-V/Si monolithic 3D circuits operating on RF band von Park, Minsik, Seong, Minkyoung, Jeong, Jaeyong, Lee, Seungin, Song, Jonghyun, Ko, Hyoungho, Lee, Ga-Won, Sul, Woo-Suk, Lee, Won-Chul, Kim, Sanghyeon, Lee, Jongwon

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High-performance V-band monolithic quadruple sub-harmonic mixer with anti-parallel diode pair von Uhm, Won-Young, Sul, Woo-Suk, Lee, Han-Shin, Kim, Sam-Dong, Park, Hyung-Moo, Rhee, Jin-Koo

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Well structure engineering to improve the responsivity of p-on-n SiPM developed at KAIST-NNFC von Lim, Kyung Taek, Kim, Hyoungtaek, Hwang, Jisung, Kim, Junhyeok, Sul, Woo Suk, Cho, Gyuseong

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Influence of Silicon Nitride Passivation on DC and RF Characteristics of 0.1 μm Pseudomorphic HEMTs von Oh, Jung-Hun, Sul, Woo-Suk, Rhee, Jin-Koo, Kim, Sam-Dong

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Comparison of the Characteristic of Metamorphic HEMTs with Different Passivation Materials von Baek, Yong-Hyun, Oh, Jung-Hun, Choi, Seok-Gyu, Sul, Woo-Suk, Rhee, Jin-Koo

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Q-band high conversion gain active sub-harmonic mixer von Lee, Bok Hyung, Kim, Sung Chan, Lee, Mun Kyo, Sul, Woo Suk, Lim, Byeong Ok, Uhm, Won Young, Rhee, Jin Koo

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High conversion gain cascode quadruple subharmonic mixer for millimeter-wave applications von Kim, Sung Chan, An, Dan, Sul, Woo Suk, Lee, Han Shin, Han, Hyo Jong, Uhm, Won Young, Park, Hyung Moo, Kim, Sam Dong, Shin, Dong-Hoon, Rhee, Jin Koo

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Electrical Characteristics of the 0.1 µm Gate Length Pseudomorphic High-Electron-Mobility Transistors with Low-Dielectric-Constant Benzo- Cyclo -Butene Passivations von Sul, Woo-Suk, Kim, Sam-Dong, Park, Hyung-Moo, Rhee, Jin-Koo

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Effect on MIM structured parallel quenching capacitor of SiPMs von Lee, Chaehun, Sul, Woo Suk, Kim, Hyoungtaek, Kim, Chankyu, Cho, Gyuseong

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A high performance CPW 4× sub-harmonic mixer using anti-parallel diode pair (APDP) for the V-band von Sul, Woo-Suk, Lee, Han-Sin, Kim, Sung-Chan, Han, Hyo-Jong, Uhm, Won-Young, An, Dan, Kim, Sam-Dong, Shin, Dong-Hoon, Park, Hyung-Moo, Rhee, Jin-Koo

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