MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality von Lemettinen, J., Okumura, H., Kim, I., Kauppinen, C., Palacios, T., Suihkonen, S.

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MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC von Lemettinen, J., Okumura, H., Kim, I., Rudzinski, M., Grzonka, J., Palacios, T., Suihkonen, S.

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Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure von Shalygin, V. A., Moldavskaya, M. D., Vinnichenko, M. Ya, Maremyanin, K. V., Artemyev, A. A., Panevin, V. Yu, Vorobjev, L. E., Firsov, D. A., Korotyeyev, V. V., Sakharov, A. V., Zavarin, E. E., Arteev, D. S., Lundin, W. V., Tsatsulnikov, A. F., Suihkonen, S., Kauppinen, C.

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Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals von Pimputkar, S., Suihkonen, S., Imade, M., Mori, Y., Speck, J.S., Nakamura, S.

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A single-pixel wireless contact lens display von Lingley, A R, Ali, M, Liao, Y, Mirjalili, R, Klonner, M, Sopanen, M, Suihkonen, S, Shen, T, Otis, B P, Lipsanen, H, Parviz, B A

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MOVPE growth of GaN on 6-inch SOI-substrates: effect of substrate parameters on layer quality and strain von Lemettinen, J, Kauppinen, C, Rudzinski, M, Haapalinna, A, Tuomi, T O, Suihkonen, S

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Electrical injection to contactless near-surface InGaN quantum well von Riuttanen, L., Kivisaari, P., Svensk, O., Oksanen, J., Suihkonen, S.

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Low energy electron beam induced vacancy activation in GaN von Nykänen, H., Suihkonen, S., Kilanski, L., Sopanen, M., Tuomisto, F.

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Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation von Melentev, G. A., Shalygin, V. A., Vorobjev, L. E., Panevin, V. Yu, Firsov, D. A., Riuttanen, L., Suihkonen, S., Korotyeyev, V. V., Lyaschuk, Yu. M., Kochelap, V. A., Poroshin, V. N.

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Diffusion injected multi-quantum well light-emitting diode structure von Riuttanen, L., Kivisaari, P., Nykänen, H., Svensk, O., Suihkonen, S., Oksanen, J., Tulkki, J., Sopanen, M.

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Application of UVA-LED based photocatalysis for plywood mill wastewater treatment von Levchuk, I., Rueda-Márquez, J.J., Suihkonen, S., Manzano, M.A., Sillanpää, M.

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Effects of low energy e-beam irradiation on cathodoluminescence from GaN von Suihkonen, S., Nykänen, H., Tanikawa, T., Yamaguchi, M., Honda, Y., Amano, H.

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Bulk plasmon-phonon polaritons in n-GaN von Orlov, E Yu, Melentev, G A, Shalygin, V A, Suihkonen, S

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2D electrons and 2D plasmons in AlGaN/GaN nanostructure under highly non-equilibrium conditions von Loginov, L A, Shalygin, V A, Moldavskaya, M D, Vinnichenko, M Ya, Firsov, D A, Maremyanin, K V, Sakharov, A V, Zavarin, E E, Arteev, D S, Lundin, W V, Kauppinen, C, Suihkonen, S

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Two-dimensional plasmons in a GaN/AlGaN heterojunction von Vinnichenko, M Ya, Shalygin, V A, Moldavskaya, M D, Artemyev, A A, Melentev, G A, Vorobjev, L E, Firsov, D A, Korotyeyev, V V, Sakharov, A V, Zavarin, E E, Arteev, D S, Lundin, W V, Suihkonen, S, Kauppinen, C

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Low energy electron beam induced damage on InGaN/GaN quantum well structure von Nykänen, H., Mattila, P., Suihkonen, S., Riikonen, J., Quillet, E., Homeyer, E., Bellessa, J., Sopanen, M.

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Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN von Ali, M., Romanov, A.E., Suihkonen, S., Svensk, O., Sintonen, S., Sopanen, M., Lipsanen, H., Nevedomsky, V.N., Bert, N.A., Odnoblyudov, M.A., Bougrov, V.E.

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Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs von Törmä, P.T., Svensk, O., Ali, M., Suihkonen, S., Sopanen, M., Odnoblyudov, M.A., Bougrov, V.E.

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Excitation and decay of surface plasmon polaritons in n-GaN von Shalygin, V A, Melentev, G A, Vorobjev, L E, Panevin, V Yu, Firsov, D A, Korotyeyev, V V, Lyaschuk, Yu M, Kochelap, V A, Suihkonen, S

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Void shape control in GaN re-grown on hexagonally patterned mask-less GaN von Ali, M., Romanov, A.E., Suihkonen, S., Svensk, O., Törmä, P.T., Sopanen, M., Lipsanen, H., Odnoblyudov, M.A., Bougrov, V.E.

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