A 271.8 nm deep-ultraviolet laser diode for room temperature operation von Zhang, Ziyi, Kushimoto, Maki, Sakai, Tadayoshi, Sugiyama, Naoharu, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi

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Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes von Zhang, Ziyi, Kushimoto, Maki, Horita, Masahiro, Sugiyama, Naoharu, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi

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On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR von Sakai, Tadayoshi, Kushimoto, Maki, Zhang, Ziyi, Sugiyama, Naoharu, Schowalter, Leo J., Honda, Yoshio, Sasaoka, Chiaki, Amano, Hiroshi

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Design and characterization of a low-optical-loss UV-C laser diode von Zhang, Ziyi, Kushimoto, Maki, Sakai, Tadayoshi, Sugiyama, Naoharu, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi

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Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate von Shioda, Tomonari, Yoshida, Hisashi, Tachibana, Koichi, Sugiyama, Naoharu, Nunoue, Shinya

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Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance von Takagi, S., Iisawa, T., Tezuka, T., Numata, T., Nakaharai, S., Hirashita, N., Moriyama, Y., Usuda, K., Toyoda, E., Dissanayake, S., Shichijo, M., Nakane, R., Sugahara, S., Takenaka, M., Sugiyama, N.

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Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique von Nakaharai, Shu, Tezuka, Tsutomu, Sugiyama, Naoharu, Moriyama, Yoshihiko, Takagi, Shin-ichi

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Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence von Isobe, Yasuhiro, Hung, Hung, Oasa, Kohei, Ono, Tasuku, Onizawa, Takashi, Yoshioka, Akira, Takada, Yoshiharu, Saito, Yasunobu, Sugiyama, Naoharu, Tsuda, Kunio, Sugiyama, Toru, Mizushima, Ichiro

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Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition von Isobe, Yasuhiro, Sakai, Takayuki, Sugiyama, Naoharu, Mizushima, Ichiro, Suguro, Kyoichi, Miyashita, Naoto, Lu, Yi, Wilson, Amalraj Frank, Kumar, Dhasiyan Arun, Ikarashi, Nobuyuki, Kondo, Hiroki, Ishikawa, Kenji, Shimizu, Naohiro, Oda, Osamu, Sekine, Makoto, Hori, Masaru

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Modulation of NiGe∕Ge Schottky barrier height by sulfur segregation during Ni germanidation von Ikeda, Keiji, Yamashita, Yoshimi, Sugiyama, Naoharu, Taoka, Noriyuki, Takagi, Shin-ichi

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Effects of Si passivation on Ge metal-insulator-semiconductor interface properties and inversion-layer hole mobility von Taoka, Noriyuki, Harada, Masatomi, Yamashita, Yoshimi, Yamamoto, Toyoji, Sugiyama, Naoharu, Takagi, Shin-ichi

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Device Design and Electron Transport Properties of Uniaxially Strained-SOI Tri-Gate nMOSFETs von Irisawa, T., Numata, T., Tezuka, T., Usuda, K., Sugiyama, N., Takagi, S.-I.

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Importance of minority carrier response in accurate characterization of Ge metal-insulator-semiconductor interface traps von Taoka, Noriyuki, Yamamoto, Toyoji, Harada, Masatomi, Yamashita, Yoshimi, Sugiyama, Naoharu, Takagi, Shinichi

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Deformation Induced Holes in Ge-Rich SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge Condensation Process von Hirashita, Norio, Moriyama, Yoshihiko, Nakaharai, Shu, Irisawa, Toshifumi, Sugiyama, Naoharu, Takagi, Shin-ichi

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Strain analysis in ultrathin SiGe-on-insulator layers formed from strained Si-on-insulator substrates by Ge-condensation process von Tezuka, Tsutomu, Hirashita, Norio, Moriyama, Yoshihiko, Nakaharai, Shu, Sugiyama, Naoharu, Takagi, Shin-ichi

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Impact of InGaN growth conditions on structural stability under high temperature process in InGaN/GaN multiple quantum wells von Hikosaka, Toshiki, Shioda, Tomonari, Harada, Yoshiyuki, Tachibana, Koichi, Sugiyama, Naoharu, Nunoue, Shin-ya

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Double Junction Tunnel using Si Nanocrystalline Layer for Nonvolatile Memory Devices von Ohba, Ryuji, Mitani, Yuichiro, Sugiyama, Naoharu, Matsumoto, Mari, Fujita, Shinobu

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Dislocation-free relaxed SiGe-on-insulator mesa structures fabricated by high-temperature oxidation von Tezuka, Tsutomu, Sugiyama, Naoharu, Takagi, Shin-ichi

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Single Source Heterojunction Metal--Oxide--Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at L... von Mizuno, Tomohisa, Moriyama, Yoshihiko, Tezuka, Tsutomu, Sugiyama, Naoharu, Takagi, Shin-ichi

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Planar defect formation mechanism in Ge-rich SiGe-on-insulator substrates during Ge condensation process von Hirashita, Norio, Nakaharai, Shu, Moriyama, Yoshihiko, Usuda, Koji, Tezuka, Tsutomu, Sugiyama, Naoharu, Takagi, Shin-ichi

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