Low-power-consumption fully depleted silicon-on-insulator technology von Sugii, Nobuyuki

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Introduction to the Special Section on the 2019 IEEE S3S Conference von Khakifirooz, Ali, Sugii, Nobuyuki

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Introduction to the Special Section on the 2018 IEEE S3S Conference von Khakifirooz, Ali, Sugii, Nobuyuki

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Thermal stability of the strained-Si/Si0.7Ge0.3 heterostructure von Sugii, Nobuyuki

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Statistical Write Stability Characterization in SRAM Cells at Low Supply Voltage von Hao Qiu, Takeuchi, Kiyoshi, Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Sugii, Nobuyuki, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro

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EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature von Kawanago, T., Yeonghun Lee, Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., Iwai, H.

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Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT von Kawanago, Takamasa, Kakushima, Kuniyuki, Kataoka, Yoshinori, Nishiyama, Akira, Sugii, Nobuyuki, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Natori, Kenji, Iwai, Hiroshi

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Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity von Li, Wei, Sasaki, Akito, Oozu, Hideyuki, Aoki, Katsuaki, Kakushima, Kuniyuki, Kataoka, Yoshinori, Nishiyama, Akira, Sugii, Nobuyuki, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Natori, Kenji, Iwai, Hiroshi

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A Perpetuum Mobile 32bit CPU on 65nm SOTB CMOS Technology with Reverse-Body-Bias Assisted Sleep Mode von ISHIBASHI, Koichiro, SUGII, Nobuyuki, KAMOHARA, Shiro, USAMI, Kimiyoshi, AMANO, Hideharu, KOBAYASHI, Kazutoshi, PHAM, Cong-Kha

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Detailed analysis of minimum operation voltage of extraordinarily unstable cells in fully depleted silicon-on-buried-oxide six-transistor static random access memory von Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Sugii, Nobuyuki, Hiramoto, Toshiro

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4H-SiC CMOS Transimpedance Amplifier of Gamma-Irradiation Resistance Over 1 MGy von Masunaga, Masahiro, Sato, Shintaroh, Kuwana, Ryo, Sugii, Nobuyuki, Shima, Akio

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Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells von Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Shinohara, Hirofumi, Iwamatsu, Toshiaki, Oda, Hidekazu, Sugii, Nobuyuki, Hiramoto, Toshiro

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Thick-Strained-Si/Relaxed-SiGe Structure of High-Performance RF Power LDMOSFETs for Cellular Handsets von Kondo, M., Sugii, N., Hoshino, Y., Hirasawa, W., Kimura, Y., Miyamoto, M., Fujioka, T., Kamohara, S., Kondo, Y., Kimura, S., Yoshida, I.

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Statistical Analysis of Subthreshold Swing in Fully Depleted Silicon-on-Thin-Buried-Oxide and Bulk Metal--Oxide--Semiconductor Field Effect Transistors von Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Iwamatsu, Toshiaki, Oda, Hidekazu, Sugii, Nobuyuki, Hiramoto, Toshiro

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Silicon light-emitting transistor for on-chip optical interconnection von Saito, Shin-ichi, Hisamoto, Digh, Shimizu, Haruka, Hamamura, Hirotaka, Tsuchiya, Ryuta, Matsui, Yuichi, Mine, Toshiyuki, Arai, Tadashi, Sugii, Nobuyuki, Torii, Kazuyoshi, Kimura, Shin'ichiro, Onai, Takahiro

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Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal von Kawanago, T., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., Iwai, H.

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Low-power embedded read-only memory using atom switch and silicon-on-thin-buried-oxide transistor von Sakamoto, Toshitsugu, Tada, Munehiro, Tsuji, Yukihide, Makiyama, Hideki, Hasegawa, Takumi, Yamamoto, Yoshiki, Okanishi, Shinobu, Banno, Naoki, Miyamura, Makoto, Okamoto, Koichiro, Iguchi, Noriyuki, Ogasahara, Yasuhiro, Oda, Hidekazu, Kamohara, Shiro, Yamagata, Yasushi, Sugii, Nobuyuki, Hada, Hiromitsu

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Role of Si1−xGex buffer layer on mobility enhancement in a strained-Si n-channel metal–oxide–semiconductor field-effect transistor von Sugii, Nobuyuki, Nakagawa, Kiyokazu, Yamaguchi, Shinya, Miyao, Masanobu

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Metal Schottky Source/Drain Technology for Ultrathin Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors von Shima, Akio, Sugii, Nobuyuki, Mise, Nobuyuki, Hisamoto, Digh, Takeda, Ken-ichi, Torii, Kazuyoshi

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Ultralow-Power SOTB CMOS Technology Operating Down to 0.4 V von Sugii, Nobuyuki, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Yamaguchi, Yasuo, Ishibashi, Koichiro, Mizutani, Tomoko, Hiramoto, Toshiro

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