Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices von Cheng, Zhe, Mu, Fengwen, Yates, Luke, Suga, Tadatomo, Graham, Samuel

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Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices von Mu, Fengwen, He, Ran, Suga, Tadatomo

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Quantification of wafer bond strength under controlled atmospheres von Takeuchi, Kai, Suga, Tadatomo

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High Thermal Boundary Conductance across Bonded Heterogeneous GaN–SiC Interfaces von Mu, Fengwen, Cheng, Zhe, Shi, Jingjing, Shin, Seongbin, Xu, Bin, Shiomi, Junichiro, Graham, Samuel, Suga, Tadatomo

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Room temperature bonding of Au assisted by self-assembled monolayer von Takeuchi, Kai, Wang, Junsha, Kim, Beomjoon, Suga, Tadatomo, Higurashi, Eiji

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Room-temperature direct bonding of silicon and quartz glass wafers von Wang, Chenxi, Wang, Yuan, Tian, Yanhong, Wang, Chunqing, Suga, Tadatomo

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Evidence for intermolecular forces involved in ladybird beetle tarsal setae adhesion von Hosoda, Naoe, Nakamoto, Mari, Suga, Tadatomo, Gorb, Stanislav N.

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GaN-Si direct wafer bonding at room temperature for thin GaN device transfer after epitaxial lift off von Mu, Fengwen, Morino, Yuki, Jerchel, Kathleen, Fujino, Masahisa, Suga, Tadatomo

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Direct wafer bonding of Ga2O3–SiC at room temperature von Xu, Yang, Mu, Fengwen, Wang, Yinghui, Chen, Dapeng, Ou, Xin, Suga, Tadatomo

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Elucidating the formation mechanisms of the parasitic channel with buffer-free GaN/Si hetero-bonding structures von Shi, Hangning, Ding, Jiaxin, Qin, Qingcheng, Yi, Ailun, Sun, Jialiang, Suga, Tadatomo, Yi, Juemin, Wang, Jianfeng, Xu, Ke, Zhou, Min, Huang, Kai, You, Tiangui, Ou, Xin

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Room Temperature Wafer Bonding of Glass Using Aluminum Oxide Intermediate Layer von Takeuchi, Kai, Mu, Fengwen, Matsumoto, Yoshiie, Suga, Tadatomo

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Exploration of the enhanced performances for silk fibroin/sodium alginate composite coatings on biodegradable Mg−Zn−Ca alloy von Fang, Hui, Wang, Chenxi, Zhou, Shicheng, Li, Ge, Tian, Yanhong, Suga, Tadatomo

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Sequential Plasma Activation for Low Temperature Bonding of Aluminosilicate Glass von Takeuchi, Kai, Mu, Fengwen, Yamauchi, Akira, Suga, Tadatomo

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Direct Homo/Heterogeneous Bonding of Silicon and Glass Using Vacuum Ultraviolet Irradiation in Air von Wang, Chenxi, Xu, Jikai, Qi, Xiaoyun, Liu, Yannan, Tian, Yanhong, Wang, Chunqing, Suga, Tadatomo

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Bonding of glass nanofluidic chips at room temperature by a one-step surface activation using an O2/CF4 plasma treatment von Xu, Yan, Wang, Chenxi, Li, Lixiao, Matsumoto, Nobuhiro, Jang, Kihoon, Dong, Yiyang, Mawatari, Kazuma, Suga, Tadatomo, Kitamori, Takehiko

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Surface activated bonding of GaAs and SiC wafers at room temperature for improved heat dissipation in high-power semiconductor lasers von Higurashi, Eiji, Okumura, Ken, Nakasuji, Kaori, Suga, Tadatomo

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Sequential plasma activation methods for hydrophilic direct bonding at sub-200 °C von He, Ran, Yamauchi, Akira, Suga, Tadatomo

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Comparison of Argon and Oxygen Plasma Treatments for Ambient Room-Temperature Wafer-Scale Au⁻Au Bonding Using Ultrathin Au Films von Yamamoto, Michitaka, Matsumae, Takashi, Kurashima, Yuichi, Takagi, Hideki, Suga, Tadatomo, Itoh, Toshihiro, Higurashi, Eiji

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Rapid pressureless and low-temperature bonding of large-area power chips by sintering two-step activated Ag paste von Fang, Hui, Wang, Chenxi, Zhou, Shicheng, Kang, Qiushi, Wang, Te, Yang, Dongsheng, Tian, Yanhong, Suga, Tadatomo

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Room-Temperature Bonding of Wafers with Smooth Au Thin Films in Ambient Air Using a Surface-Activated Bonding Method von HIGURASHI, Eiji, OKUMURA, Ken, KUNIMUNE, Yutaka, SUGA, Tadatomo, HAGIWARA, Kei

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