Dynamics of surface electron trapping of a GaN-based transistors revealed by spatiotemporally resolved x-ray spectroscopy von Omika, Keiichi, Takahashi, Kensuke, Yasui, Akira, Ohkochi, Takuo, Osawa, Hitoshi, Kouchi, Tsuyoshi, Tateno, Yasunori, Suemitsu, Maki, Fukidome, Hirokazu

Volltext

Effects of annealing temperature on the mechanical, optical, and electrical properties of hydrogenated, nitrogen-doped diamond-like carbon films von Osanai, Hiroya, Nakamura, Kazuki, Sasaki, Yuya, Koriyama, Haruto, Kobayashi, Yasuyuki, Enta, Yoshiharu, Suzuki, Yushi, Suemitsu, Maki, Nakazawa, Hideki

Volltext

Interfacial Charge States in Graphene on SiC Studied by Noncontact Scanning Nonlinear Dielectric Potentiometry von Yamasue, Kohei, Fukidome, Hirokazu, Funakubo, Kazutoshi, Suemitsu, Maki, Cho, Yasuo

Volltext

Influence of interface dipole layers on the performance of graphene field effect transistors von Nagamura, Naoka, Fukidome, Hirokazu, Nagashio, Kosuke, Horiba, Koji, Ide, Takayuki, Funakubo, Kazutoshi, Tashima, Keiichiro, Toriumi, Akira, Suemitsu, Maki, Horn, Karsten, Oshima, Masaharu

Volltext

Element‐ and Site‐Specific Many‐Body Interactions in Few‐Layer MoS2 During X‐Ray Absorption Processes von Kamada, Gen, Venugopal, Gunasekaran, Kotsugi, Masato, Ohkochi, Takuo, Suemitsu, Maki, Fukidome, Hirokazu

Volltext

Epitaxial graphene formation on 3C-SiC/Si thin films von Suemitsu, Maki, Jiao, Sai, Fukidome, Hirokazu, Tateno, Yasunori, Makabe, Isao, Nakabayashi, Takashi

Volltext

Photonic Frequency Double-Mixing Conversion Over the 120-GHz Band Using InP- and Graphene-Based Transistors von Sugawara, Kenta, Kawasaki, Tetsuya, Tamamushi, Gen, Mastura, Hussin, Dobroiu, Adrian, Yoshida, Tomohiro, Suemitsu, Tetsuya, Fukidome, Hirokazu, Suemitsu, Maki, Ryzhii, Victor, Iwatsuki, Katsumi, Kuwano, Shigeru, Kani, Jun-Ichi, Terada, Jun, Otsuji, Taiichi

Volltext

Fabrication of nanoscale three-dimensional graphite stacked-junctions by focused-ion-beam and observation of anomalous transport characteristics von Venugopal, Gunasekaran, Jung, Myung-Ho, Suemitsu, Maki, Kim, Sang-Jae

Volltext

A table-top formation of bilayer quasi-free-standing epitaxial-graphene on SiC(0001) by microwave annealing in air von Kim, Kwan-Soo, Park, Goon-Ho, Fukidome, Hirokazu, Takashi, Someya, Takushi, Iimori, Fumio, Komori, Iwao, Matsuda, Suemitsu, Maki

Volltext

Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy von Omika, Keiichi, Tateno, Yasunori, Kouchi, Tsuyoshi, Komatani, Tsutomu, Yaegassi, Seiji, Yui, Keiichi, Nakata, Ken, Nagamura, Naoka, Kotsugi, Masato, Horiba, Koji, Oshima, Masaharu, Suemitsu, Maki, Fukidome, Hirokazu

Volltext

Graphene materials and devices in terahertz science and technology von Otsuji, Taiichi, Boubanga Tombet, Stephane Albon, Satou, Akira, Fukidome, Hirokazu, Suemitsu, Maki, Sano, Eiichi, Popov, Vyacheslav, Ryzhii, Maxim, Ryzhii, Victor

Volltext

Direct Formation of Solution-based Al2O3 on Epitaxial Graphene Surface for Sensor Applications von Kim, Kwan-Soo, Fukidome, Hirokazu, Suemitsu, Maki

Volltext

Effects of pulse bias on structure and properties of silicon/nitrogen-incorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition von Nakazawa, Hideki, Miura, Soushi, Kamata, Ryosuke, Okuno, Saori, Suemitsu, Maki, Abe, Toshimi

Volltext

Graphene Formation on a 3C-SiC(111) Thin Film Grown on Si(110) Substrate von Suemitsu, Maki, Miyamoto, Yu, Handa, Hiroyuki, Konno, Atsushi

Volltext

Orbital-specific Tunability of Many-Body Effects in Bilayer Graphene by Gate Bias and Metal Contact von Fukidome, Hirokazu, Kotsugi, Masato, Nagashio, Kosuke, Sato, Ryo, Ohkochi, Takuo, Itoh, Takashi, Toriumi, Akira, Suemitsu, Maki, Kinoshita, Toyohiko

Volltext

In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si von Hasegawa, Mika, Sugawara, Kenta, Suto, Ryota, Sambonsuge, Shota, Teraoka, Yuden, Yoshigoe, Akitaka, Filimonov, Sergey, Fukidome, Hirokazu, Suemitsu, Maki

Volltext

Fabrication of multi-layer Bi 2 Se 3 devices and observation of anomalous electrical transport behaviors von Gunasekaran, Venugopal, Park, Goon-Ho, Suemitsu, Maki, Fukidome, Hirokazu

Volltext

Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110) von Sambonsuge, Shota, Jiao, Sai, Nagasawa, Hiroyuki, Fukidome, Hirokazu, Filimonov, Sergey N., Suemitsu, Maki

Volltext

Direct observation of charge transfer region at interfaces in graphene devices von Nagamura, Naoka, Horiba, Koji, Toyoda, Satoshi, Kurosumi, Shodai, Shinohara, Toshihiro, Oshima, Masaharu, Fukidome, Hirokazu, Suemitsu, Maki, Nagashio, Kosuke, Toriumi, Akira

Volltext

Graphene on C-terminated face of 4H-SiC observed by noncontact scanning nonlinear dielectric potentiometry von Yamasue, Kohei, Fukidome, Hirokazu, Tashima, Keiichiro, Suemitsu, Maki, Cho, Yasuo

Volltext