Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements von Lelis, A.J., Habersat, D., Green, R., Ogunniyi, A., Gurfinkel, M., Suehle, J., Goldsman, N.

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A Flexible Solution-Processed Memristor von Gergel-Hackett, N., Hamadani, B., Dunlap, B., Suehle, J., Richter, C., Hacker, C., Gundlach, D.

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A Simple Series Resistance Extraction Methodology for Advanced CMOS Devices von Campbell, J. P., Cheung, K. P., Suehle, J. S., Oates, A.

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Ultrathin gate oxide reliability: physical models, statistics, and characterization von Suehle, J.S.

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Band alignment of metal-oxide-semiconductor structure by internal photoemission spectroscopy and spectroscopic ellipsometry von Nguyen, N.V., Kirillov, O.A., Suehle, J.S.

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Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements von Xiong, H.D., Heh, D., Gurfinkel, M., Li, Q., Shapira, Y., Richter, C., Bersuker, G., Choi, R., Suehle, J.S.

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Band alignment issues related to HfO2∕SiO2∕p-Si gate stacks von Sayan, S., Emge, T., Garfunkel, E., Zhao, Xinyuan, Wielunski, L., Bartynski, R. A., Vanderbilt, David, Suehle, J. S., Suzer, S., Banaszak-Holl, M.

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Silicon nanowire on oxide/nitride/oxide for memory application von Li, Qiliang, Zhu, Xiaoxiao, Xiong, Hao D, Koo, Sang-Mo, Ioannou, D E, Kopanski, Joseph J, Suehle, J S, Richter, C A

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Microhotplate platforms for chemical sensor research von Semancik, S., Cavicchi, R.E., Wheeler, M.C., Tiffany, J.E., Poirier, G.E., Walton, R.M., Suehle, J.S., Panchapakesan, B., DeVoe, D.L.

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Geometric Magnetoresistance Mobility Extraction in Highly Scaled Transistors von Campbell, J P, Cheung, K P, Yu, L C, Suehle, J S, Oates, A, Sheng, K

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Silicon nanowire NVM cell using high- k dielectric charge storage layer von Zhu, X., Yang, Y., Li, Q., Ioannou, D.E., Suehle, J.S., Richter, C.A.

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Band offsets of Al2O3/InxGa1−xAs (x=0.53 and 0.75) and the effects of postdeposition annealing von Nguyen, N. V., Xu, M., Kirillov, O. A., Ye, P. D., Wang, C., Cheung, K., Suehle, J. S.

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Silicon nanowire NVM with high-k gate dielectric stack von Zhu, Xiaoxiao, Gu, D., Li, Qiliang, Ioannou, D.E., Baumgart, H., Suehle, J.S., Richter, C.A.

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Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon von Kolodzey, J., Chowdhury, E.A., Adam, T.N., Guohua Qui, Rau, I., Olowolafe, J.O., Suehle, J.S., Yuan Chen

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On the “U-shaped” continuum of band edge states at the Si/SiO2 interface von Ryan, J. T., Southwick, R. G., Campbell, J. P., Cheung, K. P., Young, C. D., Suehle, J. S.

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Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states von Ryan, J. T., Yu, L. C., Han, J. H., Kopanski, J. J., Cheung, K. P., Zhang, F., Wang, C., Campbell, J. P., Suehle, J. S.

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Tin oxide gas sensor fabricated using CMOS micro-hotplates and in-situ processing von Suehle, J.S., Cavicchi, R.E., Gaitan, M., Semancik, S.

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Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics von Vogel, E.M., Henson, W.K., Richter, C.A., Suehle, J.S.

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Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures von Witczak, S.C., Schrimpf, R.D., Fleetwood, D.M., Galloway, K.F., Lacoe, R.C., Mayer, D.C., Puhl, J.M., Pease, R.L., Suehle, J.S.

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Interface characterization of molecular-monolayer/SiO2 based molecular junctions von RICHTER, C. A, HACKER, C. A, RICHTER, L. J, KIRILLOV, O. A, SUEHLE, J. S, VOGEL, E. M

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