Radiation hardness of a wide-bandgap material by the example of SiC nuclear radiation detectors von Ivanov, A.M., Strokan, N.B., Lebedev, A.A.

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Effect of elevated temperatures (up to 250 °C) on the operating capacity of heavily irradiated p +–n SiC detectors von Ivanov, A.M., Strokan, N.B., Lebedev, A.A.

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Transport of the charge carriers in SiC-detector structures after extreme radiation fluences von Strokan, N.B., Ivanov, A.M., Lebedev, A.A.

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Charge carrier removal rates in n-type silicon and silicon carbide subjected to electron and proton irradiation von Kozlovski, V.V., Emtsev, V.V., Ivanov, A.M., Lebedev, A.A., Oganesyan, G.A., Poloskin, D.S., Strokan, N.B.

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Radiation resistance of wide-gap materials as exemplified by SiC nuclear radiation detectors von Ivanov, A. M., Strokan, N. B., Lebedev, A. A.

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On the problem of the radiation hardness of SiC nuclear radiation detectors at high working temperatures von Ivanov, A. M., Sadokhin, A. V., Strokan, N. B., Lebedev, A. A.

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Observation of impact ionization in 4H-SiC radiation detectors von Ivanov, A.M., Mynbaeva, M.G., Sadokhin, A.V., Strokan, N.B., Lebedev, A.A.

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Similarities and distinctions of defect production by fast electron and proton irradiation: moderately doped silicon and silicon carbide of n-[type.sup.1] von Emtsev, V.V, Ivanov, A.M, Kozlovski, V.V, Lebedev, A.A, Oganesyan, G.A, Strokan, N.B, Wagner, G

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Energy distribution of recoil atoms and formation of radiation defects in silicon carbide films under proton irradiation von Ivanov, A. M., Kozlovski, V. V., Strokan, N. B., Lebedev, A. A.

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The problem of uniformity of properties of 4H-SiC CVD films von Ivanov, A. M., Strokan, N. B., Scherbov, N. A., Lebedev, A. A.

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Comparative study of changes in electrical properties of silicon and silicon carbide upon proton irradiation von Emtsev, V. V., Ivanov, A. M., Kozlovskii, V. V., Lebedev, A. A., Oganesyan, G. A., Strokan, N. B.

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Metal-insulator-semiconductor barriers with a nanometer-thick aluminum nitride insulator on p-type silicon von Ivanov, A. M., Kotina, I. M., Lasakov, M. S., Strokan, N. B., Tuhkonen, L. M.

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Detection of strongly and weakly ionizing radiation by triode structure based on SiC films von Strokan, N. B., Ivanov, A. M., Savkina, N. S., Strelchuk, A. M., Lebedev, A. A., Syväjärvi, M., Yakimova, R.

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Radiation hardness of SiC based ions detectors for influence of the relative protons von Ivanov, A.M, Strokan, N.B, Davydov, D.V, Savkina, N.S, Lebedev, A.A, Mironov, Yu.T, Riabov, G.A, Ivanov, E.M

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Radiation hardness of wide-gap semiconductors (using the example of silicon carbide) von Lebedev, A. A., Kozlovski, V. V., Strokan, N. B., Davydov, D. V., Ivanov, A. M., Strel’chuk, A. M., Yakimova, R.

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Radiation resistance of transistor-and diode-type SiC detectors irradiated with 8-MeV protons von Strokan, N. B., Ivanov, A. M., Savkina, N. S., Lebedev, A. A., Kozlovskii, V. V., Syvajarvi, M., Yakimova, R.

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Spectrometry of short-range ions using detectors based on 4H-SiC films grown by chemical vapor deposition von Strokan, N. B., Ivanov, A. M., Kalinina, E. V., Kholuyanov, G. F., Onushkin, G. A., Davydov, D. V., Violina, G. N.

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Amplification of the signal in triode structures of ion detectors based on 6H-SIC epitaxial films von Lebedev, A. A., Strokan, N. B., Ivanov, A. M., Davydov, D. V., Savkina, N. S., Bogdanova, E. V., Kuznetsov, A. N., Yakimova, R.

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The Limiting Energy Resolution of SiC Detectors in Ion Spectrometry von Strokan, N. B.

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Measurement of Micrometer Diffusion Lengths by Nuclear Spectrometry von Strokan, N. B.

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