Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs von Uhnevionak, Viktoryia, Burenkov, Alexander, Strenger, Christian, Ortiz, Guillermo, Bedel-Pereira, Elena, Mortet, Vincent, Cristiano, Fuccio, Bauer, Anton J., Pichler, Peter

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Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs von Mortet, Vincent, Cristiano, Fuccio, Burenkov, Alex, Bauer, Anton J., Bedel-Pereira, Elena, Uhnevionak, Viktoryia, Pichler, Peter, Strenger, Christian

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Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs von Mortet, Vincent, Frey, Lothar, Ryssel, Heiner, Burenkov, Alexander, Bauer, Anton J., Bedel-Pereira, Eléna, Ortiz, Guillermo, Uhnevionak, Viktoryia, Pichler, Peter, Cristiano, Fuccio, Strenger, Christian, Erlbacher, Tobias

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Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation von Strenger, Christian, Uhnevionak, V., Bobo, J.F., Bedel-Pereira, E., Burenkov, A., Cristiano, F., Mortet, V., Bauer, Anton J.

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Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect von Ortiz, G., Strenger, C., Uhnevionak, V., Burenkov, A., Bauer, A. J., Pichler, P., Cristiano, F., Bedel-Pereira, E., Mortet, V.

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The Corporate Governance Scorecard: a tool for the implementation of corporate governance von Strenger, Christian

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Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices von Beltrán, A.M., Duguay, S., Strenger, C., Bauer, A.J., Cristiano, F., Schamm-Chardon, S.

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Corporate Governance in Germany: Recent Developments and Challenges von Rapp, Marc Steffen, Strenger, Christian

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Effect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the SiO2/SiC Interface on F-N Current Degradation von Bauer, Anton J., Ryssel, Heiner, Strenger, Christian

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Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation von Burenkov, Alex, Bauer, Anton J., Cristiano, Fuccio, Bedel-Pereira, Elena, Uhnevionak, Viktoryia, Pichler, Peter, Ortiz, Guillermo, Mortet, Vincent, Strenger, Christian

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Corporate Governance, Cross-Border Voting and the (Draft) Principles of the European Securities Law Legislation-Enhancing Investor Engagement Through Standardisation von Strenger, Christian, Zetzsche, Dirk A

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On the Temperature Dependence of the Hall Factor in n-Channel 4H-SiC MOSFETs von Uhnevionak, Viktoryia, Burenkov, Alex, Strenger, Christian, Bauer, Anton, Pichler, Peter

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Influence of Ion Implantation in SiC on the Channel Mobility in Lateral N-Channel MOSFETs von Strenger, Christian, Uhnevionak, Viktoryia, Burenkov, Alex, Bauer, Anton, Pichler, Peter, Erlbacher, Tobias, Ryssel, Heiner, Frey, Lothar

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Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets von Mortet, Vincent, Cristiano, Fuccio, Ryssel, Heiner, Strenger, Christian, Bauer, Anton J., Krieger, M., Uhnevionak, Viktoryia, Burenkov, Alex, Bedel-Pereira, Elena

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Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets von Mortet, Vincent, Cristiano, Fuccio, Strenger, Christian, Bauer, Anton J., Uhnevionak, Viktoryia, Pichler, Peter, Burenkov, Alex, Bedel-Pereira, Elena

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Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs von Mortet, Vincent, Cristiano, Fuccio, Lefebvre, Mathieu, Ryssel, Heiner, Strenger, Christian, Haeublein, Volker, Bauer, Anton J., Bedel-Pereira, Eléna, Beltran, Ana Maria, Schamm-Chardon, Sylvie, Erlbacher, Tobias

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Comparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiC von Ryssel, Heiner, Strenger, Christian, Bauer, Anton J., Haeublein, Volker, Rattmann, Gudrun, Temmel, Gerhard, Hürner, Andreas, Mitlehner, Heinz, Frey, Lothar

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Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs von Mortet, Vincent, Cristiano, Fuccio, Lefebvre, Mathieu, Strenger, Christian, Beltran, Ana Maria, Schamm-Chardon, Sylvie, Bedel-Pereira, Elena, Bauer, Anton J., Häublein, Volker

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Die Zuständigkeit der Hauptversammlung bei Strukturveränderungen – ein anlassbedingter Vorschlag von Stephan, Klaus-Dieter, Strenger, Christian

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Semiconductor device including silicon carbide body and method of manufacturing von Bergner, Wolfgang, Englert, Barbara, Strenger, Christian, Baier, Axel Sascha, Grasse, Florian

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