Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thicknesses von Yuan, P., Hansing, C.C., Anselm, K.A., Lenox, C.V., Nie, H., Holmes, A.L., Streetman, B.G., Campbell, J.C.

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Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz von Lenox, C., Nie, H., Yuan, P., Kinsey, G., Homles, A.L., Streetman, B.G., Campbell, J.C.

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Performance of thin separate absorption, charge, and multiplication avalanche photodiodes von Anselm, K.A., Nie, H., Hu, C., Lenox, C., Yuan, P., Kinsey, G., Campbell, J.C., Streetman, B.G.

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Thin multiplication region InAlAs homojunction avalanche photodiodes von Lenox, C., Yuan, P., Nie, H., Baklenov, O., Hansing, C., Campbell, J. C., Holmes, A. L., Streetman, B. G.

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Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product von Nie, H., Anselm, K.A., Lenox, C., Yuan, P., Hu, C., Kinsey, G., Streetman, B.G., Campbell, J.C.

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Temperature dependence of the ionization coefficients of AlxGa1-xAs von ZHENG, X. G, YUAN, P, SUN, X, KINSEY, G. S, HOLMES, A. L, STREETMAN, B. G, CAMPBELL, J. C

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Quantization effects in inversion layers of PMOSFETs on Si (100) substrates von Wu, C.-Y., Banerjee, S., Sadra, K., Streetman, B.G., Sivan, R.

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High-speed and low-noise avalanche photodiode operating at 1.06 mu m von Yuan, P, Baklenov, O, Nie, H, Holmes, AL Jr, Streetman, B G, Campbell, J C

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Factors influencing the interfacial roughness of InGaAs/GaAs heterostructures: A scanning tunneling microscopy study von Chao, Kuo-Jen, Liu, Ning, Shih, Chih-Kang, Gotthold, D. W., Streetman, B. G.

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Low-threshold continuous-wave surface emitting lasers with etched void confinement von Hansing, C.C., Deng, H., Huffaker, D.L., Deppe, D.G., Streetman, B.G., Sarathy, J.

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Effect of an AlAs/GaAs mirror on the spontaneous emission of an InGaAs-GaAs quantum well von ROGERS, T. J, DEPPE, D. G, STREETMAN, B. G

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Direct mapping of electronic structure across Al0.3Ga0.7As/GaAs heterojunctions : band offsets, asymmetrical transition widths, and multiple-valley band structures von GWO, S, CHAO, K.-J, SHIH, C. K, SADRA, K, STREETMAN, B. G

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Excess noise in GaAs avalanche photodiodes with thin multiplication regions von Hu, C., Anselm, K.A., Streetman, B.G., Campbell, J.C.

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ZnSe/CaF2 quarter-wave Bragg reflector for the vertical-cavity surface-emitting laser von LEI, C, ROGERS, T. J, DEPPE, D. G, STREETMAN, B. G

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High-reflectivity Bragg mirrors for optoelectronic applications von Murtaza, S.S., Anselm, K.A., Srinivasan, A., Streetman, B.G., Campbell, J.C., Bean, J.C., Peticolas, L.

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Scanning tunneling microscopy of GaAs multiple pn junctions von GWO, S, SMITH, A. R, SHIH, C. K, SADRA, K, STREETMAN, B. G

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InGaAs-GaAs quantum well vertical-cavity surface-emitting laser using molecular beam epitaxial regrowth von LEI, C, ROGERS, T. J, DEPPE, D. G, STREETMAN, B. G

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Resonant cavity photodetector with integrated spectral notch filter von Kinsey, G., Lenox, C., Nie, H., Campbell, J.C., Streetman, B.G.

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Noise characteristics of thin multiplication region GaAs avalanche photodiodes von Hu, C., Anselm, K. A., Streetman, B. G., Campbell, J. C.

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Negative differential resistance through real-space electron transfer von Hess, K., Morkoç, H., Shichijo, H., Streetman, B. G.

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