Hydrogen passivation of the Be acceptor in p-InP (100) von Williams, M.D, Cunningham, J.E, Chiu, T.H, Chien, M, Storz, F.G, Jan, W, Walker, J.A

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Surface cleaning of GaAs by in   situ chemical beam etching von Chiu, T. H., Tsang, W. T., Williams, M. D., Mendonça, C. A. C., Dreyer, K., Storz, F. G.

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Gain recovery time of traveling-wave semiconductor optical amplifiers von EISENSTEIN, G, TUCKER, R. S, WIESENFELD, J. M, HANSEN, P. B, RAYBON, G, JOHNSON, B. C, BRIDGES, T. J, STORZ, F. G, BURRUS, C. A

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GROWTH OF INGAAS/INP OPTICAL MODULATOR STRUCTURES BY CHEMICAL BEAM EPITAXY von CHIU, TH, GOOSSEN, KW, WILLIAMS, MD, STORZ, FG

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CBE growth of InGaAsP/InP multiple quantum wells for optical modulator applications von Chiu, T.H., Williams, M.D., Zucker, J.E., Storz, F.G.

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Vertically grating-coupled ARROW structures for III--V integrated optics von Koch, T., Burkhardt, E., Storz, F., Bridges, T., Sizer, T.

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Chemical beam epitaxial growth of InGaAs using a new precursor tri-isopropylgallium von Chiu, T.H., Williams, M.D., Storz, F.G., Ferguson, J.F.

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LINEAR AND NONLINEAR OPTICAL PROPERTIES OF ZnGeP2 AND CdSe von Boyd, G. D., Buehler, E., Storz, F. G.

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THE EFFECT OF GROWTH TEMPERATURE INSTABILITY IN THE CBE GROWTH OF INXGA1-XASYP1-Y/INP MULTIPLE QUANTUM-WELL STRUCTURES von CHIU, TH, WILLIAMS, MD, WOODWARD, TK, CUNNINGHAM, JE, ZUCKER, JE, SIZER, T, STORZ, FG, FERGUSON, JF, TSANG, WT

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Secondary ion mass spectrometry of InGaAs/InP (100) multiple layers grown by chemical beam epitaxy von WILLIAMS, M. D, CHIU, T. H, STORZ, F. G, SHUNK, S. C, FERGUSON, J. F

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Linear and nonlinear optical properties of some ternary selenides von Boyd, G., Kasper, H., McFee, J., Storz, F.

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Directional reactive ion etching at oblique angles von Boyd, G. D., Coldren, L. A., Storz, F. G.

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A scanning electron microscope study of columnar topography and liquid-crystal alignment on obliquely deposited oxide surfaces at low rates von Cheng, Julian, Boyd, G. D., Storz, F. G.

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A matrix addressable bistable nematic liquid-crystal display with electric field writing and thermal erasure von Wilson, T., Boyd, G.D., Thurston, R.N., Cheng, J., Storz, F.G., Westerwick, E.H.

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Static and nonequilibrium transient conductance at strong carrier freeze-out in a buried channel, metal-oxide-semiconductor transistor von TEWKSBURY, S. K, BIAZZO, M. R, HARRISON, T. R, LINDSTROM, T. L, TENNANT, D. M, STORZ, F. G

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Characteristics of metal-diffused LiNbO3 for acoustic devices von Boyd, G. D., Schmidt, R. V., Storz, F. G.

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MEASURED TRANSITION FROM 2-DIMENSIONAL TO 3-DIMENSIONAL ELECTROABSORPTION AS QUANTUM-WELL BARRIERS ARE LOWERED von GOOSSEN, KW, CUNNINGHAM, JE, WILLIAMS, MD, STORZ, FG, JAN, WY

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Measured transition from two-dimensional to three-dimensional electroabsorption as quantum-well barriers are lowered von GOOSSEN, K. W, CUNNINGHAM, J. E, WILLIAMS, M. D, STORZ, F. G, JAN, W. Y

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Alignment of Liquid Crystals on Surfaces with Films Deposited Obliquely at low and High Rates von Wilson, T., Boyd, G. D., Westerwick, E. H., Storz, F. G.

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