Source-measuring unit for characterizing resistive switching devices von Stoliar, P.

Volltext

An ultra-compact leaky-integrate-and-fire model for building spiking neural networks von Rozenberg, M. J., Schneegans, O., Stoliar, P.

Volltext

Spike-shape dependence of the spike-timing dependent synaptic plasticity in ferroelectric-tunnel-junction synapses von Stoliar, P., Yamada, H., Toyosaki, Y., Sawa, A.

Volltext

Avalanche breakdown in GaTa4Se8−xTex narrow-gap Mott insulators von Guiot, V., Cario, L., Janod, E., Corraze, B., Ta Phuoc, V., Rozenberg, M., Stoliar, P., Cren, T., Roditchev, D.

Volltext

Nonthermal and purely electronic resistive switching in a Mott memory von Stoliar, P., Rozenberg, M., Janod, E., Corraze, B., Tranchant, J., Cario, L.

Volltext

Quantitative phase‐mode electrostatic force microscopy on silicon oxide nanostructures von ALBONETTI, C., CHIODINI, S., ANNIBALE, P., STOLIAR, P., MARTINEZ, R. V., GARCIA, R., BISCARINI, F.

Volltext

A spiking neuron implemented in VLSI von Stoliar, P, Akita, I, Schneegans, O, Hioki, M, Rozenberg, M J

Volltext

Enhanced and continuous electrostatic carrier doping on the SrTiO3 surface von Eyvazov, A. B., Inoue, I. H., Stoliar, P., Rozenberg, M. J., Panagopoulos, C.

Volltext

Resistive switching in rectifying interfaces of metal-semiconductor-metal structures von Zazpe, R., Stoliar, P., Golmar, F., Llopis, R., Casanova, F., Hueso, L. E.

Volltext

Thermal effects on the switching kinetics of silver/manganite memristive systems von Stoliar, P, Sánchez, M J, Patterson, G A, Fierens, P I

Volltext

DNA adsorption measured with ultra-thin film organic field effect transistors von Stoliar, P., Bystrenova, E., Quiroga, S.D., Annibale, P., Facchini, M., Spijkman, M., Setayesh, S., de Leeuw, D., Biscarini, F.

Volltext

Multiscale Morphology of Organic Semiconductor Thin Films Controls the Adhesion and Viability of Human Neural Cells von Tonazzini, I., Bystrenova, E., Chelli, B., Greco, P., Stoliar, P., Calò, A., Lazar, A., Borgatti, F., D'Angelo, P., Martini, C., Biscarini, F.

Volltext

Building memristive and radiation hardness TiO2-based junctions von Ghenzi, N., Rubi, D., Mangano, E., Gimenez, G., Lell, J., Zelcer, A., Stoliar, P., Levy, P.

Volltext

Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol von Ghenzi, N., Sánchez, M. J., Rozenberg, M. J., Stoliar, P., Marlasca, F. G., Rubi, D., Levy, P.

Volltext

Asymmetric pulsing for reliable operation of titanium/manganite memristors von Gomez-Marlasca, F., Ghenzi, N., Stoliar, P., Sánchez, M. J., Rozenberg, M. J., Leyva, G., Levy, P.

Volltext

Nonvolatile Multilevel Resistive Switching Memory Cell: A Transition Metal Oxide-Based Circuit von Stoliar, P., Levy, P., Sanchez, M. J., Leyva, A. G., Albornoz, C. A., Gomez-Marlasca, F., Zanini, A., Toro Salazar, C., Ghenzi, N., Rozenberg, M. J.

Volltext

Non-conventional metallic electrodes for organic field-effect transistors von Golmar, F., Gobbi, M., Llopis, R., Stoliar, P., Casanova, F., Hueso, L.E.

Volltext

Resistive switching in Ag–TiO2 contacts von Ghenzi, N., Stoliar, P., Fuertes, M.C., Marlasca, F.G., Levy, P.

Volltext

Confocal Raman Spectroscopy of α-Sexithiophene: From Bulk Crystals to Field-Effect Transistors von Brillante, A., Bilotti, I., Albonetti, C., Moulin, J.-F., Stoliar, P., Biscarini, F., de Leeuw, D. M.

Volltext

Electric field induced avalanche breakdown and non-volatile resistive switching in the Mott Insulators AM4Q8 von Corraze, B., Janod, E., Cario, L., Moreau, P., Lajaunie, L., Stoliar, P., Guiot, V., Dubost, V., Tranchant, J., Salmon, S., Besland, M.-P., Phuoc, V. Ta, Cren, T., Roditchev, D., Stéphant, N., Troadec, D., Rozenberg, M.

Volltext