A method for negative bias temperature instability (NBTI) measurements on power VDMOS transistors von Priji, A, Dankovi, D, Vra ar, Lj, Mani, I, Priji, Z, Stojadinovi, N

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Time-dependent dielectric breakdown in pure and lightly Al-doped Ta2O5 stacks von Atanassova, E, Stojadinovi, N, Spassov, D, Mani, I, Paskaleva, A

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NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions von MANIC, I, DANKOVIC, D, PRIJIC, A, DAVIDOVIC, V, DJORIC-VELJKOVIC, S, GOLUBOVIC, S, PRIJIC, Z, STOJADINOVIC, N

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Negative bias temperature instability in n-channel power VDMOSFETs von Danković, D., Manić, I., Davidović, V., Djorić-Veljković, S., Golubović, S., Stojadinović, N.

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Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress von STOJADINOVIC, N, DANKOVIC, D, MANIC, I, PRIJIC, A, DAVIDOVIC, V, DJORIC-VELJKOVIC, S, GOLUBOVIC, S, PRIJIC, Z

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Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs von MANIC, I, DANKOVIC, D, DJORIC-VELJKOVIC, S, DAVIDOVIC, V, GOLUBOVIC, S, STOJADINOVIC, N

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Constant voltage stress induced current in Ta2O5 stacks and its dependence on a gate electrode von Atanassova, E, Stojadinovic, N, Paskaleva, A, Spassov, D, Vracar, L, Georgieva, M

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NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs von DANKOVIC, D, MANIC, I, DJORIC-VELJKOVIC, S, DAVIDOVIC, V, GOLUBOVIC, S, STOJADINOVIC, N

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Degradation behavior of Ta2O5 stacks and its dependence on the gate electrode von ATANASSOVA, E, STOJADINOVIC, N, PASKALEVA, A

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Train path congestion management: Using hybrid auctions for decentralized railway capacity allocation von Stojadinović, Nikola, Bošković, Branislav, Trifunović, Dejan, Janković, Slađana

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Effects of electrical stressing in power VDMOSFETs von Stojadinovic, N., Manic, I., Davidovic, V., Dankovic, D., Djoric-Veljkovic, S., Golubovic, S., Dimitrijev, S.

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NBTI and irradiation related degradation mechanisms in power VDMOS transistors von Stojadinović, N., Djorić-Veljković, S., Davidović, V., Golubović, S., Stanković, S., Prijić, A., Prijić, Z., Manić, I., Danković, D.

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Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs von DANKOVIC, D, MANIC, I, DAVIDOVIC, V, DJORIC-VELJKOVIC, S, GOLUBOVIC, S, STOJADINOVIC, N

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A review of pulsed NBTI in P-channel power VDMOSFETs von Danković, D., Manić, I., Prijić, A., Davidović, V., Prijić, Z., Golubović, S., Djorić-Veljković, S., Paskaleva, A., Spassov, D., Stojadinović, N.

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Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs von Stojadinovic, N., Manic, I., Djoric-Veljkovic, S., Davidovic, V., Golubovic, S., Dimitrijev, S.

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Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs von Djoric-Veljkovic, S., Manic, I., Davidovic, V., Golubovic, S., Stojadinovic, N.

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Hf-doped Ta2O5 stacks under constant voltage stress von Manić, I., Atanassova, E., Stojadinović, N., Spassov, D., Paskaleva, A.

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Radiation hardening of power MOSFETs using electrical stress von Stojadinovic, N., Djoric-Veljkovic, S., Manic, I., Davidovic, V., Golubovic, S.

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Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs von Stojadinovic, N., Manic, I., Djoric-Veljkovic, S., Davidovic, V., Golubovic, S., Dimitrijev, S.

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The contribution of border traps to the threshold voltage shift in pMOS dosimetric transistors von Savic, Z., Radjenovic, B., Pejovic, M., Stojadinovic, N.

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