Reliability and parasitic issues in GaN-based power HEMTs: a review von Meneghesso, G, Meneghini, M, Rossetto, I, Bisi, D, Stoffels, S, Van Hove, M, Decoutere, S, Zanoni, E

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Gate Reliability of p-GaN HEMT With Gate Metal Retraction von Tallarico, A. N., Stoffels, S., Posthuma, N., Bakeroot, B., Decoutere, S., Sangiorgi, E., Fiegna, C.

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On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors von Bakeroot, B., You, S., Wu, T.-L., Hu, J., Van Hove, M., De Jaeger, B., Geens, K., Stoffels, S., Decoutere, S.

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Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons von Meneghini, M., Bisi, D., Marcon, D., Stoffels, S., Van Hove, M., Wu, T.-L., Decoutere, S., Meneghesso, G., Zanoni, E.

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Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications von Borga, Matteo, De Santi, Carlo, Stoffels, S., Bakeroot, Benoit, Li, Xiangdong, Zhao, M., Van Hove, M., Decoutere, S., Meneghesso, Gaudenzio, Meneghini, Matteo, Zanoni, Enrico

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Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode von Hu, J., Stoffels, S., Lenci, S., Bakeroot, B., Venegas, R., Groeseneken, G., Decoutere, S.

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Fast and Distributed Thermal Model for Thermal Modeling of GaN Power Devices von Sodan, V., Stoffels, S., Oprins, H., Decoutere, S., Altmann, F., Baelmans, M., De Wolf, I.

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AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics von Hodges, C., Anaya Calvo, J., Stoffels, S., Marcon, D., Kuball, M.

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Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop von Marcon, D., Viaene, J., Favia, P., Bender, H., Kang, X., Lenci, S., Stoffels, S., Decoutere, S.

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Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes von Hu, J., Stoffels, S., Lenci, S., Ronchi, N., Venegas, R., You, S., Bakeroot, B., Groeseneken, G., Decoutere, S.

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Optimization of the source field‐plate design for low dynamic RDS‐ON dispersion of AlGaN/GaN MIS‐HEMTs von Ronchi, N., Bakeroot, B., You, S., Hu, J., Stoffels, S., Wu, T.‐L., De Jaeger, B., Decoutere, S.

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Ischaemic intestinal perforation complicated by Clostridium perfringens sepsis in a diabetic patient von Mutters, N. T., Stoffels, S., Eisenbach, C., Zimmermann, S.

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Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal–oxide semiconductor compatible process von Stoffels, S., Geens, K., Li, X., Wellekens, D., You, S., Zhao, M., Borga, M., Zanoni, E., Meneghesso, G., Meneghini, M., Posthuma, N.E., Van Hove, M., Decoutere, S.

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CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon von Van Hove, M., Boulay, S., Bahl, S. R., Stoffels, S., Xuanwu Kang, Wellekens, D., Geens, K., Delabie, A., Decoutere, S.

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PD-6 DNA methylome as a potential biomarker in biliary brushes and bile fluid samples to differentiate between benign and malignant biliary stenosis von Cappuyns, S., Venken, T., Stoffels, S., Philips, G., Laleman, W., van der Merwe, S., van Malenstein, H., Lambrechts, D., Dekervel, J.

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Mitigation of Alkali–Silica Reaction by Hydrated Alumina von Szeles, Tiffany, Wright, Jared, Rajabipour, Farshad, Stoffels, Shelley

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Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs von Borga, M., Meneghini, M., Stoffels, S., Van Hove, M., Zhao, M., Li, X., Decoutere, S., Zanoni, E., Meneghesso, G.

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Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications von Borga, Matteo, De Santi, Carlo, Stoffels, S, Bakeroot, Benoit, Li, Xiangdong, Zhao, M, Van Hove, M, Decoutere, S, Meneghesso, Gaudenzio, Meneghini, Matteo, Zanoni, Enrico

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Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level von Rossetto, I., Meneghini, M., Canato, E., Barbato, M., Stoffels, S., Posthuma, N., Decoutere, S., Tallarico, A.N., Meneghesso, G., Zanoni, E.

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Backcalculation of Flexible Pavement Structural Properties Using a Restart Covariance Matrix Adaptation Evolution Strategy von Kargah-Ostadi, Nima, Stoffels, Shelley M

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