Directed assembly of ZnO nanowires on a Si substrate without a metal catalyst using a patterned ZnO seed layer von Conley Jr, J F, Stecker, L, Ono, Y

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Directed integration of ZnO nanobridge devices on a Si substrate von Conley, John F., Stecker, Lisa, Ono, Yoshi

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Exploring the darkside of courtship: a test of a model of male premarital sexual aggressiveness von Christopher, F.S, Owens, L.A, Stecker, H.L

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An Examination of Single Men's and Women's Sexual Aggressiveness in Dating Relationships von Christopher, F. Scott, Owens, Laura A., Stecker, Heidi L.

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One transistor ferroelectric memory with Pt/Pb5Ge3O11/Ir/Poly-Si /SiO2/Si gate stack von Li, T, Hsu, S T, Ulrich, B D, Stecker, L, Evans, D R, Lee, J J

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Selective growth and directed integration of ZnO nanobridge devices on si substrates without a metal catalyst using a ZnO seed layer von Conley, John F., Stecker, Lisa, Ono, Yoshi

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Fabrication and characterization of a Pb5Ge3O11 one-transistor-memory device von Li, Tingkai, Hsu, Sheng Teng, Ulrich, Bruce, Ying, Hong, Stecker, Lisa, Evans, Dave, Ono, Yoshi, Maa, Jer-shen, Lee, J. J.

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One Transistor Ferroelectric Memory Devices with Improved Retention Characteristics von Li, Tingkai, Hsu, Sheng Teng, Ulrich, Bruce, Stecker, Lisa, Evans, Dave

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Heterojunction InAlAs/InP MESFETs grown by OMVPE von Fathimulla, M.A., Loughran, T., Stecker, L., Hempfling, E., Mattingly, M., Aina, O.

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One transistor ferroelectric memory with Pt/Pb5Ge3O/sub 11//Ir/poly-Si/SiO2/Si gate-stack von Tingkai Li, Sheng Teng Hsu, Ulrich, B.D., Stecker, L., Evans, D.R., Lee, J.J.

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One transistor ferroelectric memory with Pt/Pb/sub 5/Ge/sub 3/O/sub 11//Ir/poly-Si/SiO/sub 2//Si gate-stack von Tingkai Li, Sheng Teng Hsu, Ulrich, B.D., Stecker, L., Evans, D.R., Lee, J.J.

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One transistor ferroelectric memory with Pt/Pb(5)Ge(3)O(11)/Ir/poly-Si/SiO(2)/Si gate-stack von Li, Tingkai, Hsu, Sheng Teng, Ulrich, B D, Stecker, L, Evans, D R, Lee, J J

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One transistor ferroelectric memory with Pt/Pb5Ge3 O11/Ir/poly-Si/SiO2/Si gate-stack von Li, Tingkai, Hsu, Sheng Teng, Ulrich, B.D, Stecker, L, Evans, D.R, Lee, J.J

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One transistor ferroelectric memory with Pt/Pb sub(5)Ge sub(3)O sub(11 )/Ir/Poly-Si/SiO sub(2)/Si gate stack von Li, Tingkai, Hsu, Sheng Teng, Ulrich, Bruce D, Stecker, Lisa, Evans, David R, Lee, Jong J

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Photoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxy von AINA, L, MATTINGLY, M, STECKER, L

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One transistor ferroelectric menory devices with improved retention characteristics von Li, T, Hsu, S T, Ulrich, B, Stecker, L, Evans, D

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FABRICATION AND CHARACTERIZATION OF SUB-MICRON METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR FIELD EFFECT TRANSISTORS WITH Pt/Pb5Ge3O11/ZrO2/Si STRUCTURE von Zhang, F, Hsu, S T, Ono, Y, Ulrich, B, Zhuang, W, Ying, H

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Undoped InP/InGaAs heterostructure insulated-gate FET's grown by OMVPE with PECVD-deposited SiO2 as gate insulator von MARTIN, E. A, AINA, O. A, ILIADIS, A. A, MATTINGLY, M. R, STECKER, L. H

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Selectivity to silicon nitride in chemical vapor deposition of titanium silicide von Maa, J. S., Howard, D. J., He, S. S., Tweet, D. J., Stecker, L., Stecker, G., Hsu, S. T.

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Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM) von Zhuang, W.W., Pan, W., Ulrich, B.D., Lee, J.J., Stecker, L., Burmaster, A., Evans, D.R., Hsu, S.T., Tajiri, M., Shimaoka, A., Inoue, K., Naka, T., Awaya, N., Sakiyama, A., Wang, Y., Liu, S.Q., Wu, N.J., Ignatiev, A.

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