The negative bias temperature instability in MOS devices: A review von Stathis, J.H., Zafar, S.

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Percolation models for gate oxide breakdown von Stathis, J. H.

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Reliability of advanced high-k/metal-gate n-FET devices von Stathis, J.H., Wang, M., Zhao, K.

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Electron energy dissipation model of gate dielectric progressive breakdown in n- and p-channel field effect transistors von Lombardo, S., Wu, E. Y., Stathis, J. H.

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Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen von CARTIER, E, STATHIS, J. H, BUCHANAN, D. A

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A model for gate-oxide breakdown in CMOS inverters von Rodriguez, R., Stathis, J.H., Linder, B.P.

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The impact of gate-oxide breakdown on SRAM stability von Rodriguez, R., Stathis, J.H., Linder, B.P., Kowalczyk, S., Chuang, C.T., Joshi, R.V., Northrop, G., Bernstein, K., Bhavnagarwala, A.J., Lombardo, S.

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Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films von DiMaria, D. J., Stathis, J. H.

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Breakdown transients in ultrathin gate oxides: transition in the degradation rate von Lombardo, S, Stathis, J H, Linder, B P

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Luminescence degradation in porous silicon von TISCHLER, M. A, COLLINS, R. T, STATHIS, J. H, TSANG, J. C

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Statistics of progressive breakdown in ultra-thin oxides von Linder, B.P., Stathis, J.H.

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Hybrid-orientation technology (HOT): opportunities and challenges von Min Yang, Chan, V.W.C., Chan, K.K., Shi, L., Fried, D.M., Stathis, J.H., Chou, A.I., Gusev, E., Ott, J.A., Burns, L.E., Fischetti, M.V., Meikei Ieong

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Ultimate limit for defect generation in ultra-thin silicon dioxide von DiMaria, D. J., Stathis, J. H.

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Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures von DiMaria, D. J., Stathis, J. H.

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Interface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si substrates von Stathis, J.H., Bolam, R., Yang, M., Hook, T.B., Chou, A., Larosa, G.

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Electrically detected magnetic resonance study of stress-induced leakage current in thin SiO2 von Stathis, J. H.

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Photoinduced hydrogen loss from porous silicon von COLLINS, R. T, TISCHLER, M. A, STATHIS, J. H

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Effect and model of gate oxide breakdown on CMOS inverters von Rodrı́guez, R, Stathis, J.H, Linder, B.P

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Anode hole injection, defect generation, and breakdown in ultrathin silicon dioxide films von DiMaria, D. J., Stathis, J. H.

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Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics von Linder, B.P., Lombardo, S., Stathis, J.H., Vayshenker, A., Frank, D.J.

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