Overview of atomic layer etching in the semiconductor industry von Kanarik, Keren J., Lill, Thorsten, Hudson, Eric A., Sriraman, Saravanapriyan, Tan, Samantha, Marks, Jeffrey, Vahedi, Vahid, Gottscho, Richard A.

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Hysteresis between gas breakdown and plasma discharge von Yamashita, Yusuke, Hara, Kentaro, Sriraman, Saravanapriyan

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Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas von Huard, Chad M., Sriraman, Saravanapriyan, Paterson, Alex, Kushner, Mark J.

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Role of neutral transport in aspect ratio dependent plasma etching of three-dimensional features von Huard, Chad M., Zhang, Yiting, Sriraman, Saravanapriyan, Paterson, Alex, Kushner, Mark J.

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Atomic layer etching of 3D structures in silicon: Self-limiting and nonideal reactions von Huard, Chad M., Zhang, Yiting, Sriraman, Saravanapriyan, Paterson, Alex, Kanarik, Keren J., Kushner, Mark J.

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Control of ion energy and angular distributions in dual-frequency capacitively coupled plasmas through power ratios and phase: Consequences on etch profiles von Zhang, Yiting, Kushner, Mark J., Sriraman, Saravanapriyan, Marakhtanov, Alexei, Holland, John, Paterson, Alex

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Coarse nonlinear dynamics and metastability of filling-emptying transitions : Water in carbon nanotubes von SRIRAMAN, Saravanapriyan, KEVREKIDIS, Ioannis G, HUMMER, Gerhard

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Investigation of feature orientation and consequences of ion tilting during plasma etching with a three-dimensional feature profile simulator von Zhang, Yiting, Huard, Chad, Sriraman, Saravanapriyan, Belen, Jun, Paterson, Alex, Kushner, Mark J.

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Evolution of structure, morphology, and reactivity of hydrogenated amorphous silicon film surfaces grown by molecular-dynamics simulation von Ramalingam, Shyam, Sriraman, Saravanapriyan, Aydil, Eray S., Maroudas, Dimitrios

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Growth and characterization of hydrogenated amorphous silicon thin films from SiH2 radical precursor: Atomic-scale analysis von Sriraman, Saravanapriyan, Aydil, Eray S., Maroudas, Dimitrios

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Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon von Zhang, Shenli, Huang, Yihan, Tetiker, Gulcin, Sriraman, Saravanapriyan, Paterson, Alex, Faller, Roland

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Achieving Sustainability in the Semiconductor Industry: The Impact of Simulation and AI von Osowiecki, Wojciech T., Coogans, Martyn J., Sriraman, Saravanapriyan, Ranjan, Rakesh, Joe Lu, Yu, Fried, David M.

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Mechanism of hydrogen-induced crystallization of amorphous silicon von Aydil, Eray S, Maroudas, Dimitrios, Sriraman, Saravanapriyan, Agarwal, Sumit

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Atomic-scale analysis of fundamental mechanisms of surface valley filling during plasma deposition of amorphous silicon thin films von Valipa, Mayur S., Sriraman, Saravanapriyan, Aydil, Eray S., Maroudas, Dimitrios

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Role of neutral transport in aspect ratio dependent plasma etching of three-dimensional features von Huard, Chad M., Zhang, Yiting, Sriraman, Saravanapriyan, Paterson, Alex, Kushner, Mark J.

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Coarse Master Equation from Bayesian Analysis of Replica Molecular Dynamics Simulations von Sriraman, Saravanapriyan, Kevrekidis, Ioannis G., Hummer, Gerhard

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SEMICONDUCTOR SUBSTRATE BEVEL CLEANING von Sriraman, Saravanapriyan

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Hydrogen-induced crystallization of amorphous silicon thin films. I. Simulation and analysis of film postgrowth treatment with H 2 plasmas von Sriraman, Saravanapriyan, Valipa, Mayur S., Aydil, Eray S., Maroudas, Dimitrios

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Semiconductor substrate bevel cleaning von Sriraman, Saravanapriyan

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Mechanism and energetics of dimerization of SiH2 radicals on H-terminated Si(001)-(2 x 1) surfaces von SRIRAMAN, Saravanapriyan, MAHALINGAM, Pushpa, AYDIL, Eray S, MAROUDAS, Dimitrios

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